公开(公告)号：US07438955B2

公开(公告)日：2008-10-21

申请号：US10505994

申请日：2002-02-27

Applicant: Henry J. Ramos

Inventor： Henry J. Ramos

IPC: H05H1/24 ,  C23C16/00 ,  C23C14/00 ,  C23C14/32

CPC classification number: C23C14/355 ,  C23C14/325 ,  H01J2237/08 ,  H01J2237/3142

Abstract: A procedure for the synthesis of titanium nitride (TiN) thin films on metal substrate by vapor deposition using a magnetized sheet plasma source is disclosed. TiN films on metal substrate exhibiting the stoichiometric TiN and Ti2N were synthesized in a mixed N2/Ar plasma with initial gas filing ratio of preferably 1:3 under the following conditions: total initial gas filing pressure of at least about 40 mTorr, plasma current in the range of about 2A to 3A and plasma discharge potential in the range of about 125V to about 150V.

Abstract translation: 公开了一种通过使用磁化片状等离子体源通过气相沉积在金属基底上合成氮化钛（TiN）薄膜的方法。 在具有化学计量的TiN和Ti 2 N的金属基体上的TiN膜在混合的N 2 / Ar / Ar等离子体中合成，初始气体填充比优选为1:3，在下列 条件：总初始气体压力至少约40mTorr，等离子体电流在约2A至3A的范围内，等离子体放电电位在约125V至约150V的范围内。

公开(公告)号：US07365346B2

公开(公告)日：2008-04-29

申请号：US11023467

申请日：2004-12-29

Applicant: Yuichiro Sasaki ,  Bunji Mizuno

Inventor： Yuichiro Sasaki ,  Bunji Mizuno

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/0653 ,  H01J2237/08 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring device.

Abstract translation: 离子注入装置和方法可以随时间动态地控制束电流值，并且不改变能量。 该离子注入装置通过对用束电流测量装置测量的束电流值进行反馈来控制束电流值随时间的动态变化。

公开(公告)号：US20080026548A1

公开(公告)日：2008-01-31

申请号：US11547724

申请日：2005-03-29

Applicant: Noriaki Tani ,  Taizo Morinaka ,  Toshihiro Suzuki ,  Masahiro Matsumoto

Inventor： Noriaki Tani ,  Taizo Morinaka ,  Toshihiro Suzuki ,  Masahiro Matsumoto

IPC: H01L21/02 ,  H01L21/20

CPC classification number: C23C14/0078 ,  C23C14/083 ,  C23C14/10 ,  C23C14/16 ,  C23C14/5833 ,  G02B5/28 ,  H01J37/34 ,  H01J2237/08

Abstract: An optical film having a thin film stacked and optical characteristics close to design values is provided. In a vacuum chamber (2), a rotating drum (3) holding a substrate (4), an Si target (22) for forming a metal film on a film forming plane of the substrate (4), a Ta target (23), and an ECR reaction chamber (30) for reacting the metal film to a reaction gas by plasma, are provided. A film forming apparatus (51) is provided with an ion gun (11) for accelerating reaction of the film formed on the film forming plane by irradiating the film forming plane with ion beams, and the metal film formation, the gas reaction and the reaction acceleration by using ion beams are repeatedly performed.

Abstract translation: 提供了具有层叠薄膜的光学膜和接近设计值的光学特性。 在真空室（2）中，保持基板（4）的旋转滚筒（3），用于在基板（4）的成膜面上形成金属膜的Si靶（22），Ta靶（23） 和用于通过等离子体使金属膜与反应气体反应的ECR反应室（30）。 成膜装置（51）具有离子枪（11），用于通过用离子束照射成膜面来加速形成在成膜面上的膜的反应，并且金属膜形成，气体反应和反应 反复进行使用离子束的加速。

公开(公告)号：US07321118B2

公开(公告)日：2008-01-22

申请号：US11147102

申请日：2005-06-07

Applicant: Billy W. Ward

Inventor： Billy W. Ward

IPC: H01J37/30

CPC classification number: H01J37/28 ,  G01N23/04 ,  G01N23/225 ,  H01J37/08 ,  H01J2237/08 ,  H01J2237/0807 ,  H01J2237/2802

Abstract: Scanning Transmission Ion Microscope. The microscope includes a bright helium ion source to generate an ion beam and a focusing electrostatic optical column to focus the ion beam. A translation stage supports a sample to receive the focused ion beam and a detector responds to ions transmitted through the sample to generate a signal from which properties of the sample may be displayed.

Abstract translation: 扫描透射离子显微镜。 显微镜包括用于产生离子束的明氦离子源和用于聚焦离子束的聚焦静电光学柱。 平移台支持采样以接收聚焦的离子束，并且检测器对通过样品传输的离子进行响应以产生可以显示样品的特性的信号。

公开(公告)号：US07271400B1

公开(公告)日：2007-09-18

申请号：US10913965

申请日：2004-08-06

Applicant: Yasser R. Shaban ,  George H. Miley

Inventor： Yasser R. Shaban ,  George H. Miley

IPC: A61N5/00 ,  G21G5/00 ,  G21K5/10 ,  H01J37/08

CPC classification number: H01J27/16 ,  G21K1/093 ,  H01J2237/08

Abstract: A high-perveance steady state deuterium ion gun was developed using a magnetic-index resonator in an Inductive Coupling Radio Frequency (ICRF) configuration. This approach made it feasible to generate an ion beam within millimeter dimensions extracted by negative potential placed at several centimeters from the exit of the ion source. The ion gun allows high extraction efficiency and low beam divergence as compared to other approaches.

Abstract translation: 使用感应耦合射频（ICRF）配置中的磁指数谐振器开发了高度均匀的稳态氘离子枪。 这种方法使得在从离子源的出口放置在几厘米处的负电位提取的毫米尺寸内产生离子束是可行的。 与其他方法相比，离子枪允许高提取效率和低光束发散。

公开(公告)号：US20070210331A1

公开(公告)日：2007-09-13

申请号：US11369828

申请日：2006-03-08

Applicant: Yu Chen

Inventor： Yu Chen

IPC: H01L31/00

CPC classification number: H01L21/68785 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/038 ,  H01J2237/08

Abstract: A guard ring applied to an ion implantation equipment is disposed between a bushing and an ion beam source housing of the ion implantation equipment. The guard ring is made of high-density ceramic material. The guard ring can prevent arcing generated by the high voltage used for ion implantation from causing unpredicted damage to the bushing, thereby effectively protecting the ion implantation equipment, increasing the lifetime of use of the ion implantation equipment, and lengthening the maintenance cycle.

Abstract translation: 施加到离子注入设备的保护环设置在离子注入设备的衬套和离子束源壳体之间。 保护环由高密度陶瓷材料制成。 保护环可以防止用于离子注入的高电压产生的电弧对套管造成不可预测的损害，从而有效地保护离子注入设备，增加离子注入设备的使用寿命，并延长维护周期。

公开(公告)号：US07002166B2

公开(公告)日：2006-02-21

申请号：US10484647

申请日：2002-08-27

Applicant: David Norman Jamieson ,  Steven Prawer ,  Andrew Steven Dzurak ,  Robert Graham Clark ,  Changyi Yang

Inventor： David Norman Jamieson ,  Steven Prawer ,  Andrew Steven Dzurak ,  Robert Graham Clark ,  Changyi Yang

IPC: H01L21/265 ,  H01L31/115 ,  H01J37/304 ,  G06N1/00 ,  G01T1/00

CPC classification number: H01J37/08 ,  B82Y10/00 ,  B82Y40/00 ,  G06N99/002 ,  H01J37/20 ,  H01J37/244 ,  H01J37/3171 ,  H01J37/3174 ,  H01J2237/08 ,  H01J2237/20228 ,  H01J2237/20292 ,  H01J2237/31703 ,  H01J2237/31711 ,  H01J2237/31713 ,  H01J2237/31755 ,  H01J2237/31788 ,  H01L21/265 ,  H01L21/26513

Abstract: This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.

Abstract translation: 本发明涉及通过检测衬底中单一离子的冲击，穿透和停止来进行单离子掺杂和机械加工的方法和系统。 这种检测对于将数量为“31”的P离子成功地注入到用于构建Kane量子计算机的半导体衬底中是必不可少的。 本发明特别涉及在衬底的表面上跨两个电极施加电位以产生分离和扫除在衬底内形成的电子 - 空穴对的场。 然后使用检测器来检测电极中的瞬态电流，并且因此确定单个离子到达衬底中。

公开(公告)号：US06919690B2

公开(公告)日：2005-07-19

申请号：US10896747

申请日：2004-07-21

Applicant: Daniel E. Siegfried ,  David Matthew Burtner ,  Scott A. Townsend ,  John Keem ,  Mark Krivoruchko ,  Valery Alexeyev ,  Vsevolod Zelenkov

Inventor： Daniel E. Siegfried ,  David Matthew Burtner ,  Scott A. Townsend ,  John Keem ,  Mark Krivoruchko ,  Valery Alexeyev ,  Vsevolod Zelenkov

IPC: B03C3/00 ,  F03H20060101 ,  H01J7/24

CPC classification number: H01J27/143 ,  H01J27/022 ,  H01J2237/08

Abstract: A modular ion source design relies on relatively short modular anode layer source (ALS) components, which can be coupled together to form a longer ALS. For long ion sources, these shorter modular components allow for easier manufacturing and further result in a final assembly having better precision (e.g., a uniform gap dimensions along the longitudinal axis of the ion source). Modular components may be designed to have common characteristics so as to allow use of these components in ion sources of varying sizes. A modular gas distribution system uniformly distributes a working gas to the ionization region of the module ion source. For each gas distribution module, gas distribution channels and baffles are laid out relative to the module joints to prevent gas leakage. Furthermore, gas manifolds and supply channels are used to bridge module joints while uniformly distributing the working gas to the ALS.

Abstract translation: 模块化离子源设计依赖于相对短的模块化阳极层源（ALS）组件，其可以耦合在一起以形成更长的ALS。 对于长离子源，这些较短的模块化部件允许更容易的制造，并且进一步导致最终组装具有更好的精度（例如，沿离子源的纵向轴线的均匀间隙尺寸）。 模块化部件可以设计成具有共同的特性，以便允许在不同尺寸的离子源中使用这些部件。 模块化气体分配系统将工作气体均匀分布到模块离子源的电离区域。 对于每个气体分配模块，气体分配通道和挡板相对于模块接头布置，以防止气体泄漏。 此外，气体歧管和供应通道用于桥接模块接头，同时将工作气体均匀分布到ALS。

公开(公告)号：US06875986B1

公开(公告)日：2005-04-05

申请号：US09559345

申请日：2000-04-27

Applicant: Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

Inventor： Atsushi Murakoshi ,  Kyoichi Suguro ,  Katsuya Okumura

IPC: H01J27/02 ,  H01J27/08 ,  H01J37/08

CPC classification number: H01J27/08 ,  H01J27/02 ,  H01J2237/08 ,  H01J2237/31701

Abstract: According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.

Abstract translation: 根据离子产生方法，由要产生的所需离子的元素组成的离子源材料被加热，使得产生化合物的蒸汽，并且通过排出蒸气产生离子。 碘化物没有腐蚀性，可以稳定地电离。 此外，它几乎不与氧气或水反应并且是安全的。

公开(公告)号：US20050062480A1

公开(公告)日：2005-03-24

申请号：US10667875

申请日：2003-09-22

Applicant: Asher Pearl

Inventor： Asher Pearl

IPC: G01N27/62 ,  H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J49/10

CPC classification number: H01J37/08 ,  H01J27/02 ,  H01J27/26 ,  H01J2237/08 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: The invention provides a system and method for controlling a source of liquid metal ions, the source comprises a tip a first electrode and a second electrode, the method includes the steps of: (i) maintaining the first electrode at a first voltage level range and maintaining the second voltage at a second voltage range, such as to extract metal ions formed on a tip of the source, during an active mode of operation of the source; and (ii) maintaining the first electrode at a third voltage level range and maintaining the second voltage at a fourth voltage level range, such as to substantially reduce an extraction of metal ions from the tip, during an idle mode of operation of the source. The third voltage level range and, alternatively or additionally, the fourth voltage level ranges does not include zero voltage level. The first voltage level range differs than the third voltage level range.