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    System and method for reducing irregularities on the surface of a backside illuminated photodiode
    47.
    发明授权
    System and method for reducing irregularities on the surface of a backside illuminated photodiode 有权
    用于减少背面照射光电二极管表面的凹凸的系统和方法

    公开(公告)号：US09349902B2

    公开(公告)日：2016-05-24

    申请号：US13486833

    申请日：2012-06-01

    申请人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

    发明人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

    IPC分类号： H01L31/00 ,  H01L31/103 ,  H01L29/36 ,  H01L31/18

    CPC分类号： H01L31/103 ,  H01L29/36 ,  H01L31/1037 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

    摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.

    摘要翻译： 用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。 一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。 掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。 可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物 。 然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

    PHOTODETECTING DEVICE HAVING SEMICONDUCTOR REGIONS SEPARATED BY A POTENTIAL BARRIER
    48.
    发明申请
    PHOTODETECTING DEVICE HAVING SEMICONDUCTOR REGIONS SEPARATED BY A POTENTIAL BARRIER 有权
    具有潜在障碍物分隔开的半导体区域的光电转换装置

    公开(公告)号：US20150060965A1

    公开(公告)日：2015-03-05

    申请号：US14451648

    申请日：2014-08-05

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    发明人： Pierre GIDON ,  Norbert MOUSSY

    IPC分类号： H01L27/146 ,  H01L31/103

    CPC分类号： H01L27/14643 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L31/1037

    摘要： Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.

    摘要翻译： 光检测装置，包括：根据第一类导电性掺杂的半导体层; 根据与第一类型的导电性相反的第二类型的导电性，彼此不同且彼此分离并且彼此相邻布置在半导体层中的两个第一半导体部分被掺杂; 根据所述第一类型的导电性掺杂的第二半导体部分，其掺杂程度大于所述半导体层的掺杂水平，并且通过形成pn结来限定所述第一部分，其中半导体层的一部分将第一 使得第一部分之间的耗尽区形成电位低于第二部分和半导体层的电位的势垒的部分。

    Integrated photodiode for semiconductor substrates
    50.
    发明授权
    Integrated photodiode for semiconductor substrates 有权
    用于半导体衬底的集成光电二极管

    公开(公告)号：US08410568B2

    公开(公告)日：2013-04-02

    申请号：US12547463

    申请日：2009-08-25

    申请人： Gary Steinbrueck ,  James S. Vickers ,  Mario M. Pelella ,  Majid Aghababazadeh ,  Nader Pakdaman

    发明人： Gary Steinbrueck ,  James S. Vickers ,  Mario M. Pelella ,  Majid Aghababazadeh ,  Nader Pakdaman

    IPC分类号： H01L31/0203

    CPC分类号： H01L31/1016 ,  H01L27/1443 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/1037

    摘要： A substrate section that is at least partially fabricated to include contact elements and materials. The substrate section includes doped regions that have a heavily doped N-type region and a heavily doped P-type region adjacent to one another. An exterior surface of the substrate has a topography that includes a light-transparent region in which light, from a light source, is able to reach a surface of the substrate. An application of light onto the light transparent region is sufficient to cause a voltage potential to form across a junction of the heavily doped regions. The substrate section may further comprise one or more electrical contacts, positioned on the substrate section to conduct current, resulting from the voltage potential created with application of light onto the light transparent region, to a circuit on the semiconductor substrate.

    摘要翻译： 至少部分地制造成包括接触元件和材料的基底部分。 衬底部分包括具有重掺杂的N型区域和彼此相邻的重掺杂P型区域的掺杂区域。 衬底的外表面具有包括光透射区域的形貌，其中来自光源的光能够到达衬底的表面。 在光透射区域上的光的施加足以在重掺杂区域的结的两端形成电压电位。 衬底部分还可以包括位于衬底部分上的一个或多个电触点，以将导致由在光透明区域上施加光产生的电压电位导致的电流传导到半导体衬底上的电路。