公开(公告)号：US06546034B2

公开(公告)日：2003-04-08

申请号：US09748175

申请日：2000-12-27

申请人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

发明人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2224

摘要： A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.

摘要翻译： 半导体激光器件包括半导体衬底，半导体衬底的一侧上的第一包层区域，有源层区域和设置在半导体衬底的相对侧上的第二覆盖区域。 有源层区域设置在半导体衬底和第二覆盖区域之间。 第一半导体区域与有源层区域中的光的行进方向平行地设置在有源层区域的两侧，并且具有比有源层区域高的电阻，并且具有比半导体的折射率高的折射率 基质。 在第一半导体区域和第二包层区域的一部分之间形成绝缘或半绝缘的第二半导体区域。 提供第一电极和第二电极用于将电流注入到有源层区域中。

公开(公告)号：US20030026307A1

公开(公告)日：2003-02-06

申请号：US10210656

申请日：2002-07-31

申请人： Matsushita Electric Industrial Co., Ltd.

发明人： Koji Makita ,  Hideto Adachi ,  Toshiya Kawata ,  Hiroshi Asaka ,  Osamu Imafuji ,  Toshiya Fukuhisa ,  Akira Takamori

IPC分类号： H01S005/00

CPC分类号： H01S5/2231 ,  H01S5/2054 ,  H01S5/2081 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/3211

摘要： A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

摘要翻译： 半导体激光器具有形成在第一导电型半导体基板上的第一导电型包覆层，有源层和第二导电型包覆层。 第二导电型包覆层在至少四个点中具有台面状的条状凹部，以形成构成脊型电流限制部的中心脊部分，以及两个以上的侧脊部， 位于中央脊部的两侧的高度比中心脊部的高度大，并且包括第二导电型包覆层。 具有比第二导电型包覆层低的折射率的绝缘膜分别形成在从第二导电型包覆层的侧表面在中心脊部的两个侧表面上的区域中分别设置的一对条带 外。 绝缘膜不形成在中心脊部上。

公开(公告)号：US20020139989A1

公开(公告)日：2002-10-03

申请号：US10104634

申请日：2002-03-21

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Takayuki Matsuyama

IPC分类号： H01S005/00 ,  H01L021/00 ,  H01L033/00

CPC分类号： H01S5/227 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2275 ,  H01S5/2277

摘要： An optical semiconductor device having a low threshold current and easiness of a single transverse mode oscillation is provided. The optical semiconductor device has a low device parasitic capacitance that allows a direct modulation at high speed. The optical semiconductor device comprises a first conduction type substrate, a stripe shaped active layer formed on the first conduction type substrate, a mesa shaped burying layer formed around the active layer and having a larger band gap than that of the active layer, and a groove that electrically isolates the burying layer, wherein the section of the burying layer is in an inverse trapezoid shape of which the upper base side is longer than the lower base side.

摘要翻译： 提供了具有低阈值电流和单一横向振荡的容易性的光学半导体器件。 光学半导体器件具有允许高速直接调制的低器件寄生电容。 光学半导体器件包括第一导电型衬底，形成在第一导电型衬底上的条形有源层，形成在有源层周围并且具有比有源层的带隙大的带隙的台面状埋层;以及沟槽 所述掩埋层的所述截面呈反梯形形状，所述上基部侧的长度比所述下基部侧长。

公开(公告)号：US06395573B1

公开(公告)日：2002-05-28

申请号：US09626800

申请日：2000-07-26

申请人： Jun Ho Jang ,  Kang Hyun Sung

发明人： Jun Ho Jang ,  Kang Hyun Sung

IPC分类号： H01L2100

CPC分类号： H01L33/0062 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/2206 ,  H01S5/2219 ,  H01S5/2275 ,  H01S5/32325

摘要： Provided with a laser diode and its fabricating method including the steps of: sequentially forming a first conductivity type clad layer, an active layer, a second conductivity type first clad layer, an etch stop layer, a second conductivity type second clad layer, a second conductivity type InGaP layer, and a second conductivity type GaAs layer, on a first conductivity type substrate; forming an insulating layer on the second conductivity type GaAs layer and patterning it, exposing a defined region of the second conductivity type GaAs layer; performing a reactive ion etching using the patterned insulating layer as a mask, etching the second conductivity type GaAs layer, the second conductivity type InGaP layer, and the second conductivity type second clad layer to a specified depth and remaining part of the second conductivity type second clad layer; forming a photoresist on the whole surface including the insulating layer and patterning it, exposing the residual second conductivity type second clad layer; performing a wet etching using the patterned photoresist as a mask to etch the second conductivity type second clad layer, exposing the etch stop layer and etching the residual photoresist and insulating layer; forming a current blocking layer on the exposed etch stop layer, and a second conductivity type contact layer on the whole surface including the current blocking layer; and forming electrodes on the second conductivity type contact layer and beneath the substrate, respectively.

摘要翻译： 提供一种激光二极管及其制造方法，包括以下步骤：顺序形成第一导电型覆盖层，有源层，第二导电型第一覆盖层，蚀刻停止层，第二导电型第二覆盖层，第二导电型 导电型InGaP层和第二导电型GaAs层，在第一导电型基板上; 在所述第二导电型GaAs层上形成绝缘层并对其进行构图，暴露所述第二导电类型GaAs层的限定区域; 使用图案化绝缘层作为掩模进行反应离子蚀刻，将第二导电型GaAs层，第二导电型InGaP层和第二导电型第二覆盖层蚀刻到指定深度并将第二导电类型第二次的剩余部分 包层 在包括绝缘层的整个表面上形成光致抗蚀剂并对其进行图案化，暴露残留的第二导电类型的第二覆盖层; 使用图案化的光致抗蚀剂作为掩模进行湿蚀刻以蚀刻第二导电类型的第二包层，暴露蚀刻停止层并蚀刻残留的光致抗蚀剂和绝缘层; 在暴露的蚀刻停止层上形成电流阻挡层，在包括电流阻挡层的整个表面上形成第二导电型接触层; 以及在第二导电型接触层上和在基底之下分别形成电极。

公开(公告)号：US20020051476A1

公开(公告)日：2002-05-02

申请号：US09984798

申请日：2001-10-31

申请人： FUJI PHOTO FILM CO., LTD.

发明人： Toshiaki Fukunaga

IPC分类号： H01S005/00

CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/32333 ,  H01S5/3403 ,  H01S5/3406

摘要： In a semiconductor laser device having a substrate and an active region, the active region includes an active layer between tensile strain optical waveguide layers. The active layer includes at least one compressive strain quantum well sublayer. When the active layer includes more than one compressive strain quantum well sublayer, the active layer further includes at least one barrier sublayer being formed between the more than one quantum well sublayer and having an identical amount of tensile strain to that of the optical waveguide layers. The absolute value of a sum of a product of the strain and the total thickness of the at least one quantum well sublayer and a product of the strain and the total thickness of the optical waveguide layers and the at least one barrier sublayer (if any) is equal to or smaller than 0.05 nm.

摘要翻译： 在具有基板和有源区域的半导体激光器件中，有源区域包括拉伸应变光波导层之间的有源层。 有源层包括至少一个压缩应变量子阱子层。 当有源层包括多于一个的压缩应变量子阱子层时，有源层还包括至少一个阻挡子层，其形成在多于一个的量子阱子层之间并且具有与光波导层的拉伸应变相同的拉伸应变。 至少一个量子阱子层的应变和总厚度的乘积之和与光波导层和至少一个阻挡子层（如果有的话）的应变和总厚度的乘积的和的绝对值， 等于或小于0.05nm。

公开(公告)号：US20010001612A1

公开(公告)日：2001-05-24

申请号：US09756117

申请日：2001-01-09

发明人： Yasumasa Inomoto ,  Yasutaka Sakata

IPC分类号： H01S005/00

CPC分类号： B82Y20/00 ,  H01S5/0265 ,  H01S5/2077 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/34373

摘要： An integrated semiconductor laser produced by forming waveguide layers each having a particular band gap and a particular layer thickness collectively and then forming an InP current blocking layer is disclosed. After an InGaAsP layer has been formed on an InP substrate, a waveguide including a multiple quantum well active layer is formed by selective MOVPE. Then, the waveguide is buried in an InP current blocking layer. In this configuration, the current blocking layer exhibits its expected function without regard to the width of SiO2 stripes used for selective metalorganic vapor phase epitaxial growth (MOVPE). The laser is feasible for high output operation and can be produced at a high yield.

摘要翻译： 公开了通过形成各自具有特定带隙和特定层厚度的波导层，然后形成InP电流阻挡层而制造的集成半导体激光器。 在InP衬底上形成InGaAsP层之后，通过选择性MOVPE形成包括多量子阱有源层的波导。 然后，波导被埋在InP电流阻挡层中。 在这种结构中，电流阻挡层表现出其预期的功能，而不考虑用于选择性金属有机气相外延生长（MOVPE）的SiO 2条纹的宽度。 激光器对于高输出操作是可行的，并且可以以高产率生产。

公开(公告)号：US06181723B2

公开(公告)日：2001-01-30

申请号：US09073106

申请日：1998-05-05

申请人： Nobuhiro Okubo ,  Masaya Ishida ,  Yoshiro Akagi ,  Masanori Watanabe ,  Fumihiro Konushi

发明人： Nobuhiro Okubo ,  Masaya Ishida ,  Yoshiro Akagi ,  Masanori Watanabe ,  Fumihiro Konushi

IPC分类号： H01S500

CPC分类号： H01L33/305 ,  H01L33/145 ,  H01S5/2206 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054

摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.

摘要翻译： 发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。 碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。 或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。 另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞 提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。

公开(公告)号：US6154476A

公开(公告)日：2000-11-28

申请号：US47386

申请日：1998-03-25

申请人： Harumi Nishiguchi ,  Yuji Ohkura

发明人： Harumi Nishiguchi ,  Yuji Ohkura

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01S5/32 ,  H01S5/0287 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/32316

摘要： A semiconductor laser diode includes a p-type GaAs semiconductor substrate, a p-type region which includes a p-type AlGaAs lower cladding layer, an active layer and an n-type region which includes an n-type AlGaAs upper cladding layer, wherein the n-type AlGaAs upper cladding layer is Al.sub.x Ga.sub.1-x As (x.gtoreq.0.4) having a carrier concentration of no more than 6.times.10.sup.17 cm.sup.-3.

摘要翻译： 半导体激光二极管包括p型GaAs半导体衬底，包括p型AlGaAs下包层的p型区，有源层和包括n型AlGaAs上覆层的n型区，其中 n型AlGaAs上覆层是载流子浓度不大于6×10 17 cm -3的Al x Ga 1-x As（x> / = 0.4）。

公开(公告)号：US6044099A

公开(公告)日：2000-03-28

申请号：US924826

申请日：1997-09-05

申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Kouji Komeda ,  Toyozo Nishida ,  Yasuyuki Bessho

发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Kouji Komeda ,  Toyozo Nishida ,  Yasuyuki Bessho

IPC分类号： H01S3/22 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/085

CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S3/22 ,  H01S5/168 ,  H01S5/34 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34326

摘要： A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

摘要翻译： 一种半导体激光器件包括n型包覆层，形成在n型包层上的有源层，并具有包括一个或多个量子阱层的量子阱结构，p型包层形成为平坦部分 在平坦部分上的有源层和条形脊部分上形成的电流阻挡层，以及形成在平坦部分上的电流阻挡层，以覆盖脊部的侧表面并形成在脊部的上表面上的区域上 从空腔的一个面到距预定距离的位置。

公开(公告)号：US5963572A

公开(公告)日：1999-10-05

申请号：US773346

申请日：1996-12-26

申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。