公开(公告)号：US11998991B2

公开(公告)日：2024-06-04

申请号：US17273310

申请日：2019-09-03

申请人： KYOCERA CORPORATION

发明人： Tadashi Katsuma

IPC分类号： B23B27/14 ,  C23C16/36 ,  C23C16/40 ,  C23C28/04

CPC分类号： B23B27/14 ,  C23C16/36 ,  C23C16/403 ,  C23C28/044 ,  B23B2224/04 ,  B23B2224/32

摘要： A coated tool may include a base member including a first surface, and a coating layer. The coating layer may include a plurality of voids located side by side in a first layer in a direction along an interface, which is a boundary between the first layer and a second layer. The second layer may include a lower layer part and an upper layer part, and an angle formed by a normal line of (001) surface of the constituent particles with respect to a cross section of the second layer is an orientation difference, the lower layer part of the second layer includes a ratio of the particles whose orientation difference is 10° or more of 50% or more, and the upper layer part of the second layer includes a ratio of the particles whose orientation difference is 10° or less of 80% or more.

公开(公告)号：US20240175123A1

公开(公告)日：2024-05-30

申请号：US18340022

申请日：2023-06-22

申请人： Phononics Ltd

发明人： Anna Kosinova ,  Inbar Dag

IPC分类号： C23C16/40 ,  C23C14/10 ,  C23C14/34 ,  C23C14/58 ,  C23C16/24 ,  C23C16/50 ,  C23C16/56

CPC分类号： C23C16/402 ,  C23C14/10 ,  C23C14/34 ,  C23C14/5853 ,  C23C14/588 ,  C23C16/24 ,  C23C16/50 ,  C23C16/56 ,  H05K7/2039

摘要： A method for manufacturing an item that exhibits a heat dissipating property, the method includes (i) forming a first structure that has a smooth silicon surface and includes a first layer of silicon and a diamond layer, wherein the forming includes depositing the first layer of silicon on the diamond layer, (ii) forming a second structure that has a smooth thermal silicon dioxide surface and includes a layer of thermal silicon dioxide and a second layer of silicon, the forming includes growing the layer of thermal silicon dioxide on the second layer of silicon; (iii) forming a third structure, the forming includes fusion bonding the smooth silicon surface to the smooth thermal silicon dioxide surface; (iv) forming a fourth structure, the forming includes removing the second layer of silicon from the third structure; and (v) fusion bonding a substrate to the smooth thermal silicon dioxide surface to provide the item.

公开(公告)号：US11996288B2

公开(公告)日：2024-05-28

申请号：US17051779

申请日：2018-10-08

申请人： SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES

发明人： Xiaodong Zhang ,  Yaming Fan ,  Baoshun Zhang

IPC分类号： H01L21/02 ,  C23C16/40 ,  C30B25/18 ,  C30B29/16

CPC分类号： H01L21/0262 ,  C23C16/40 ,  C30B25/183 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02483 ,  H01L21/02565

摘要： The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one α-(AlxGa1-x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(AlxGa1-x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-Ga2O3 and α-Al2O3, but also effectively reduce the defect density of α-Ga2O3 epitaxial film, thus further improving the crystal quality of the α-Ga2O3 epitaxial film materials.

公开(公告)号：US11993842B2

公开(公告)日：2024-05-28

申请号：US18072392

申请日：2022-11-30

申请人： Applied Materials, Inc. ,  The Regents of the University of California

发明人： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C28/04

CPC分类号： C23C16/405 ,  C23C16/45523 ,  C23C28/04

摘要： Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20240158915A1

公开(公告)日：2024-05-16

申请号：US18550932

申请日：2022-02-23

申请人： VERSUM MATERIALS US, LLC

发明人： HARIPIN CHANDRA ,  STEVEN G. MAYORGA ,  XINJIAN LEI

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： C23C16/45553 ,  C23C16/401

摘要： Atomic layer deposition (ALD) process formation of silicon oxide with temperature

公开(公告)号：US20240150895A1

公开(公告)日：2024-05-09

申请号：US18280539

申请日：2022-02-24

申请人： TOKYO ELECTRON LIMITED

发明人： Shuji AZUMO ,  Shinichi IKE ,  Yumiko KAWANO ,  Hiroki MURAKAMI

IPC分类号： C23C16/455 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52

CPC分类号： C23C16/45529 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

摘要： A film forming method includes: a preparation process of preparing a substrate having a surface from which a first film without containing silicon and a second film are exposed; a first film formation process of forming a self-assembled monolayer, which has a fluorine-containing functional group and inhibits formation of a third film containing silicon, on the first film; a second film formation process of forming the third film on the second film; a modification process of decomposing the self-assembled monolayer by plasma using a gas containing hydrogen and nitrogen while maintaining a temperature of the substrate to be 70 degrees C. or lower, so that a side portion of the third film, which is formed in a vicinity of the self-assembled monolayer, is modified into ammonium fluorosilicate by active species contained in the decomposed self-assembled monolayer; and a removal process of removing the ammonium fluorosilicate.

公开(公告)号：US11976357B2

公开(公告)日：2024-05-07

申请号：US16698549

申请日：2019-11-27

申请人： Applied Materials, Inc.

发明人： Geetika Bajaj ,  Yogita Pareek ,  Prerna Sonthalia Goradia ,  Ankur Kadam

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  H01J37/32

CPC分类号： C23C16/45536 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/4404 ,  C23C16/45553 ,  H01J37/32467 ,  H01J37/32495

摘要： Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.

公开(公告)号：US11970778B2

公开(公告)日：2024-04-30

申请号：US17650090

申请日：2022-02-07

申请人： Tokyo Electron Limited

发明人： Reita Igarashi

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/45563 ,  C23C16/4412

摘要： A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas supply pipe configured to supply a gas into the processing container; and an exhaust duct extending in a longitudinal direction of the processing container to form an exhaust window configured to exhaust the gas from an interior of the processing container, a first exhaust flow path configured to exhaust, from a first side in a longitudinal direction of the exhaust window, the gas exhausted through the exhaust window, and a second exhaust flow path configured to exhaust, from a second side in the longitudinal direction of the exhaust window, the gas exhausted through the exhaust window, wherein the exhaust duct includes: a first gas introduction part configured to introduce a ballast gas into the first exhaust flow path, and a second gas introduction part configured to introduce the ballast gas into the second exhaust flow path.

公开(公告)号：US20240136495A1

公开(公告)日：2024-04-25

申请号：US18547323

申请日：2022-02-22

申请人： PULSEDEON OY

发明人： Ville KEKKONEN ,  Jari LIIMATAINEN

IPC分类号： H01M4/04 ,  C23C14/08 ,  C23C14/18 ,  C23C14/20 ,  C23C14/28 ,  C23C14/56 ,  C23C14/58 ,  C23C16/40 ,  C23C28/00 ,  H01G11/06 ,  H01G11/50 ,  H01G11/86 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562

CPC分类号： H01M4/0423 ,  C23C14/08 ,  C23C14/18 ,  C23C14/20 ,  C23C14/28 ,  C23C14/562 ,  C23C14/5806 ,  C23C16/40 ,  C23C28/322 ,  C23C28/345 ,  H01G11/06 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0407 ,  H01M4/0471 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/382 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2004/027

摘要： A method for manufacturing a component of an electrochemical energy storage device utilizes lithium such that a coating method based on pulsed laser ablation is utilized in the production of an ion-conducting inorganic material layer on at least one surface of a lithium metal anode. At least one material layer is processed by thermal, mechanical, or thermomechanical treatment or by combination of any of these treatments after pulsed laser deposition. A roll-to-roll method can be used in the deposition, in which the substrate to be coated is directed from one roll to the second roll, and the deposition takes place in the area between the rolls. Moving and/or turning mirrors can be used to direct laser pulses as a beam line array to the surface of the target material.

公开(公告)号：US11965246B2

公开(公告)日：2024-04-23

申请号：US16435749

申请日：2019-06-10

申请人： Tokyo Electron Limited

发明人： Naonori Fujiwara

IPC分类号： C23C16/52 ,  C23C16/24 ,  C23C16/40 ,  C23C16/458

CPC分类号： C23C16/52 ,  C23C16/24 ,  C23C16/402 ,  C23C16/4584

摘要： A method of depositing a film over a substrate covered with at least an insulating film provided with a groove is provided. In the method, a deposition process for depositing the film is performed by supplying at least a raw material gas to the substrate. The raw material gas is supplied while changing an amount of the raw material gas supplied per unit time.