公开(公告)号：US20190390338A1

公开(公告)日：2019-12-26

申请号：US16563473

申请日：2019-09-06

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20190027573A1

公开(公告)日：2019-01-24

申请号：US16038024

申请日：2018-07-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US09911676B2

公开(公告)日：2018-03-06

申请号：US15397237

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Xiaoqiang Jiang ,  Petri Raisanen ,  Pauline Calka

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L23/3171 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/306 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L28/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US20170306478A1

公开(公告)日：2017-10-26

申请号：US15135224

申请日：2016-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Eric Shero ,  Suvi Haukka ,  Robert Brennan Milligan ,  Michael Eugene Givens

IPC: C23C16/38 ,  C23C16/455

CPC classification number: C23C16/38 ,  C23C16/45523 ,  C23C16/45525

Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.

公开(公告)号：US20160376704A1

公开(公告)日：2016-12-29

申请号：US14752712

申请日：2015-06-26

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/06

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

Abstract translation: 公开了形成包括金属碳化物材料的薄膜结构的方法，以及包括金属碳化物材料的结构和装置。 示例性结构包括使用两种或更多种不同工艺（例如两种或更多种不同的前体）形成的金属碳化物材料，其能够调整各种金属碳化物材料性质，包括电阻率，电流泄漏和功函数。

公开(公告)号：US20160358772A1

公开(公告)日：2016-12-08

申请号：US14729510

申请日：2015-06-03

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Fu Tang ,  Michael Givens ,  Petri Raisanen ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L29/10 ,  H01L29/20 ,  H01L23/31 ,  H01L29/16

CPC classification number: H01L21/02247 ,  H01L21/02112 ,  H01L21/02205 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/2807 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/518

Abstract: In some embodiments, a semiconductor surface having a high mobility semiconductor may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Abstract translation: 在一些实施方案中，具有高迁移率半导体的半导体表面可以有效地通过氮化钝化，优选使用肼，肼衍生物或其组合。 该表面可以是晶体管沟道区的半导体表面。 在一些实施例中，在半导体表面处形成半导体表面氧化物层，并且通过在表面形成半导体氮氧化物层来实现钝化，其中氮化对表面氧化物产生氮以形成氧氮化物层。 半导体氧化物层可以通过原子层沉积（ALD）沉积，并且氮化也可以作为ALD的一部分进行。

公开(公告)号：US09177784B2

公开(公告)日：2015-11-03

申请号：US14183187

申请日：2014-02-18

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Mohith Verghese

IPC: H01L21/285 ,  H01L21/336 ,  H01L21/31 ,  H01L21/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L21/02233 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L22/12 ,  H01L22/20 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.

Abstract translation: 提供了与在衬底上形成膜堆叠的方法相关的实施例。 一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。 该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料，而不将基板暴露于空气断裂。

公开(公告)号：US20140322885A1

公开(公告)日：2014-10-30

申请号：US13872932

申请日：2013-04-29

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括形成第一电极，通过热原子层沉积（ALD）形成包括金属氧化物的电阻式切换氧化物层，并通过热原子层沉积（ALD）形成第二电极，其中电阻式开关层介于第一 电极和第二电极。 可以在沉积金属氧化物之后，进行电阻式开关氧化物的形成而不使开关氧化物层的表面暴露于表面改性等离子体处理。

公开(公告)号：US20140027884A1

公开(公告)日：2014-01-30

申请号：US13941216

申请日：2013-07-12

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael Eugene Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L21/02 ,  H01L21/67 ,  H01L23/02

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

Abstract translation: 公开了用于钝化高迁移率半导体的表面的改进的方法和系统以及使用这些方法形成的结构和器件。 该方法包括向反应器的室提供高迁移率半导体表面，并将高迁移率半导体表面暴露于气相硫前体以钝化高迁移率半导体表面。

公开(公告)号：US20250081588A1

公开(公告)日：2025-03-06

申请号：US18950377

申请日：2024-11-18

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.