公开(公告)号：US20200243341A1

公开(公告)日：2020-07-30

申请号：US16835279

申请日：2020-03-30

申请人： Applied Materials, Inc.

发明人： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC分类号： H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

摘要： In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

公开(公告)号：US20240360557A1

公开(公告)日：2024-10-31

申请号：US18139121

申请日：2023-04-25

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Yixiong Yang ,  Tianyi Huang ,  Geetika Bajaj ,  Hsin-Jung Yu ,  Tengzhou Ma ,  Seshadri Ganguli ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Debaditya Chatterjee

IPC分类号： C23C16/455 ,  C23C16/08 ,  C23C16/18

CPC分类号： C23C16/45553 ,  C23C16/08 ,  C23C16/18

摘要： Methods for depositing metal films using a metal halide and metal organic precursors are described. The substrate is exposed to a first metal precursor and a second metal precursor to form the metal film. The exposures can be sequential or simultaneous. The metal films are relatively pure with a low carbon content.

公开(公告)号：US12114488B2

公开(公告)日：2024-10-08

申请号：US17308577

申请日：2021-05-05

申请人： Applied Materials, Inc.

发明人： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC分类号： H10B12/00 ,  C23C16/42 ,  C23C16/455

CPC分类号： H10B12/488 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45553

摘要： Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US12022650B2

公开(公告)日：2024-06-25

申请号：US18149226

申请日：2023-01-03

申请人： Applied Materials, Inc.

发明人： Yixiong Yang ,  Jacqueline S. Wrench ,  Yong Yang ,  Srinivas Gandikota ,  Annamalai Lakshmanan ,  Joung Joo Lee ,  Feihu Wang ,  Seshadri Ganguli

IPC分类号： H10B12/00 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234

CPC分类号： H10B12/488 ,  C23C16/45553 ,  H01L21/02491 ,  H01L21/02631 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/823431 ,  H01L21/823475

摘要： Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

公开(公告)号：US20240102157A1

公开(公告)日：2024-03-28

申请号：US17950946

申请日：2022-09-22

申请人： Applied Materials, Inc.

发明人： TUERXUN AILIHUMAER ,  Srinivas Gandikota ,  Yixiong Yang ,  Yogesh Sharma ,  Ashutosh Agarwal ,  Mandyam Sriram

IPC分类号： C23C16/08 ,  C23C16/455 ,  H01L21/285

CPC分类号： C23C16/08 ,  C23C16/45538 ,  C23C16/45553 ,  H01L21/28556 ,  H01L2924/01042

摘要： Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-K dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and a plasma at a temperature of less than or equal to 400° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The plasma comprises one or more of hydrogen (H2), nitrogen (N2), or a silane (SixHy). In some embodiments, when the molybdenum-containing precursor comprises molybdenum hexafluoride (MoF6), the plasma does not include hydrogen (H2).

公开(公告)号：US11888045B2

公开(公告)日：2024-01-30

申请号：US17557787

申请日：2021-12-21

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC分类号： H01L29/51 ,  H01L29/40 ,  H01L29/49

CPC分类号： H01L29/513 ,  H01L29/401 ,  H01L29/4958 ,  H01L29/4966

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20230015781A1

公开(公告)日：2023-01-19

申请号：US17376504

申请日：2021-07-15

申请人： Applied Materials, Inc.

发明人： Ria Someshwar ,  Seshadri Ganguli ,  Lan Yu ,  Siddarth Krishnan ,  Srinivas Gandikota ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC分类号： H01L29/45 ,  H01L29/40 ,  H01L21/285 ,  H01L21/324

摘要： Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor; pre-cleaning the substrate; depositing a titanium silicide (TiSi) layer on the n transistor and on the p transistor by plasma-enhanced chemical vapor deposition (PECVD); optionally depositing a first barrier layer on the titanium silicide (TiSi) layer and selectively removing the first barrier layer from the p transistor; selectively forming a molybdenum silicide (MoSi) layer on the titanium silicide (TiSi) layer on the n transistor and the p transistor; forming a second barrier layer on the molybdenum silicide (MoSi) layer; and annealing the semiconductor structure. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US11437271B2

公开(公告)日：2022-09-06

申请号：US16867092

申请日：2020-05-05

申请人： Applied Materials, Inc.

发明人： Yixiong Yang ,  Srinivas Gandikota ,  Wei Liu

IPC分类号： H01L21/768 ,  H01L21/321

摘要： Methods for filling a substrate feature with a seamless gap fill are described. Methods comprise forming a metal film a substrate surface, the sidewalls and the bottom surface of a feature, the metal film having a void located within the width of the feature; treating the metal film with a plasma; and annealing the metal film to remove the void.

公开(公告)号：US20220246471A1

公开(公告)日：2022-08-04

申请号：US17720836

申请日：2022-04-14

申请人： Applied Materials, Inc.

发明人： Anqing Cui ,  Dien-Yeh Wu ,  Wei V. Tang ,  Yixiong Yang ,  Bo Wang

IPC分类号： H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

摘要： Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

公开(公告)号：US20220165854A1

公开(公告)日：2022-05-26

申请号：US17668992

申请日：2022-02-10

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M. Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).