公开(公告)号：US5611942A

公开(公告)日：1997-03-18

申请号：US397617

申请日：1995-03-02

申请人： Tadashi Mitsui ,  Katsuya Okumura

发明人： Tadashi Mitsui ,  Katsuya Okumura

IPC分类号： G01B21/30 ,  B81B1/00 ,  G01N37/00 ,  G01Q60/24 ,  G01Q70/10 ,  G01Q70/16 ,  H01J37/28 ,  H01J37/00 ,  B44C1/22

CPC分类号： G01Q60/38 ,  B82Y35/00 ,  Y10S438/978 ,  Y10S977/878

摘要： The present invention is a method for forming a three point atomic force microscope tip. The method includes forming a substantially longitudinally extending solid tip having a peripheral surface and a forward end surface. Three masks are formed by deposition of carbon upon the solid tip, with a first and second of the masks formed along the peripheral surface, and a third of the masks formed on the forward end surface. The mask covered tip is then etched for a predetermined period of time to remove material from both the tip and the mask. After the predetermined period of time has elapsed, the masks are completely removed, and the removal of material from the tip results in the formation of three spikes which are pointed to the location from which the masks were removed.

摘要翻译： 本发明是形成三点原子力显微镜尖端的方法。 该方法包括形成具有周边表面和前端表面的基本纵向延伸的固体尖端。 通过将碳沉积在固体末端上形成三个掩模，其中第一和第二掩模沿着外周表面形成，并且三分之一的掩模形成在前端表面上。 然后将掩模覆盖的尖端蚀刻预定时间段以从尖端和掩模两者中去除材料。 在经过预定时间之后，掩模被完全去除，并且从尖端去除材料导致三个尖峰的形成，这三个尖峰指向去除掩模的位置。

公开(公告)号：US5539179A

公开(公告)日：1996-07-23

申请号：US792592

申请日：1991-11-15

申请人： Toshihisa Nozawa ,  Junichi Arami ,  Shinji Kubota ,  Isahiro Hasegawa ,  Katsuya Okumura

发明人： Toshihisa Nozawa ,  Junichi Arami ,  Shinji Kubota ,  Isahiro Hasegawa ,  Katsuya Okumura

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  B23K10/00

CPC分类号： H02N13/00 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for electrostatically holding a wafer is provided in a vacuum chamber formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member, a first insulating layer provided on the base member and made of polyimide, a second insulation layer made of AlN, a conductive sheet provided between first and second insulation layers, and an adhesive layer made of a thermosetting resin and adhering the first insulating layer to the second insulating layer. The wafer is placed on the second insulating layer, and power is supplied from a high voltage power supply to the conductive sheet via a feeding sheet, thereby creating static electricity and hence a coulombic force for holding the wafer on the second insulating layer.

摘要翻译： 用于静电保持晶片的静电卡盘设置在形成在磁控管等离子体蚀刻装置中的真空室中。 所述静电卡盘具有基材，在所述基材上设置的由聚酰亚胺构成的第一绝缘层，由AlN构成的第二绝缘层，设置在第一绝缘层和第二绝缘层之间的导电片，以及由热固性树脂 并且将第一绝缘层粘合到第二绝缘层。 将晶片放置在第二绝缘层上，并且通过馈电片从高压电源向导电片提供电力，从而产生静电，因此产生用于将晶片保持在第二绝缘层上的库仑力。

公开(公告)号：US5444207A

公开(公告)日：1995-08-22

申请号：US37169

申请日：1993-03-26

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： B23K10/00 ,  H01J37/32 ,  H01L21/00 ,  H05H1/18

CPC分类号： H01J37/32623 ,  B23K10/003 ,  H01J37/3266

摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.

摘要翻译： 一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。 该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。 磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

公开(公告)号：US5437733A

公开(公告)日：1995-08-01

申请号：US778370

申请日：1991-10-17

申请人： Katsuya Okumura

发明人： Katsuya Okumura

IPC分类号： G03F7/30 ,  C25D5/02 ,  C25D7/12 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/304 ,  H01L21/60 ,  B08B3/04

CPC分类号： H01L21/67023

摘要： A plane of a treatment liquid holder having a number of through holes faces a treatment surface of a substrate. A treatment liquid is held between the treatment surface and the liquid holder by utilizing a surface tension of the treatment liquid. Since the treatment liquid is applied only to the treatment surface, an extremely small amount of treatment liquid suffices for the treatment. In addition, since a fresh treatment liquid can be used in every treatment, cross-contamination is suppressed and the treatment can be performed with safety at a low cost.

摘要翻译： 具有多个通孔的处理液保持器的平面面向基板的处理表面。 通过利用处理液的表面张力将处理液体保持在处理表面和液体保持器之间。 由于处理液仅施加到处理表面，所以极少量的处理液足以进行处理。 此外，由于在每次处理中可以使用新鲜处理液，因此可以以低成本安全地进行交叉污染并进行处理。

公开(公告)号：US5405443A

公开(公告)日：1995-04-11

申请号：US051554

申请日：1993-04-23

申请人： Masami Akimoto ,  Kazuyuki Gotou ,  Yasushi Ito ,  Katsuya Okumura

发明人： Masami Akimoto ,  Kazuyuki Gotou ,  Yasushi Ito ,  Katsuya Okumura

IPC分类号： B05C11/08 ,  B05C11/10 ,  G03F7/16 ,  G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  B05C5/00

CPC分类号： H01L21/6715 ,  B05C11/08 ,  B05C11/1002 ,  B05C11/101 ,  B05C11/1047 ,  G03F7/162 ,  G03F7/3021

摘要： A substrates processing device having a tank in which process solution is contained, a bottle communicated with the tank through a conduit and located above an object to be processed with the process solution supplied, a nozzle located under the bottle, a support for supporting the object to be processed, and a changeover device for making pressure in it negative through a conduit when the process solution is to be added to it and also making pressure in it normal through the conduit when the process solution is to be supplied to the nozzle.

摘要翻译： 一种基板处理装置，具有容纳有处理液的罐，通过导管与罐连通的瓶子，位于被供给的处理液的待处理对象上方，位于瓶下方的喷嘴，支撑物体的支撑体 以及当将工艺溶液加入其中时，通过导管使压力为负的切换装置，并且当将处理液提供给喷嘴时，通过导管使压力正常。

公开(公告)号：US5356834A

公开(公告)日：1994-10-18

申请号：US35656

申请日：1993-03-23

申请人： Shigeki Sugimoto ,  Katsuya Okumura

发明人： Shigeki Sugimoto ,  Katsuya Okumura

IPC分类号： H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/441

CPC分类号： H01L27/10852 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76897 ,  Y10S148/133

摘要： A manufacturing method of semiconductor devices according to this invention, comprises the step of forming pattern portions containing internal wiring layers on a semiconductor substrate, the step of forming interlayer insulating films on said semiconductor substrate, the step of forming an opening portion in said interlayer insulating films so as to allow the pattern portions and the substrate to appear, and the step of forming a sidewall insulating film on the sidewall of the pattern portions appearing in the opening portion.

摘要翻译： 根据本发明的半导体器件的制造方法包括在半导体衬底上形成包含内部布线层的图案部分的步骤，在所述半导体衬底上形成层间绝缘膜的步骤，在所述层间绝缘体中形成开口部分的步骤 以使图形部分和基板出现，以及在出现在开口部分的图案部分的侧壁上形成侧壁绝缘膜的步骤。

公开(公告)号：US5314847A

公开(公告)日：1994-05-24

申请号：US768611

申请日：1991-10-18

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/027 ,  H01L21/20 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/324 ,  H01L21/34 ,  H01L21/768 ,  H01L23/522 ,  H01L21/02

CPC分类号： H01L21/67109 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/2022 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31105 ,  H01L21/31658 ,  H01L21/321 ,  H01L21/324 ,  H01L29/66969

摘要： In order to provide the processing required to prevent a semiconductor substrate from becoming contaminated or damaged, without heating it in a kiln, a combustion flame of a gas that is a mixture of hydrogen and oxygen is applied to the surface of the semiconductor substrate, so that only the substrate surface is heated. Oxidizing or reducing processing can be provided by varying the ratio of hydrogen to oxygen. A device that enables this processing method comprises a first conduit (6) for guiding hydrogen; a second conduit (7) for guiding oxygen; a flame generation means (5) for combusting the hydrogen and the oxygen in a mixed state to generate a downward-pointing flame over a range wider than the diameter of a semiconductor substrate (1) that is being processed; a flow regulation means (8) and (9) provided midway in each of the first tube and the second tube, for regulating the fluid passing through each of the first tube and the second tube; and a conveyor means (2), (3), and (14) for conveying the semiconductor substrate that is being processed, provided below the flame generation means.

摘要翻译： PCT No.PCT / JP91 / 00215 Sec。 371日期1991年10月18日 102（e）日期1991年10月18日PCT 1991年2月20日PCT PCT。 出版物WO91 / 13461 1991年9月5日。为了提供防止半导体衬底被污染或损坏的处理，而不在窑中加热，将作为氢和氧的混合物的气体的燃烧火焰施加到 表面，使得只有基板表面被加热。 可以通过改变氢与氧的比例来提供氧化或还原处理。 实现该处理方法的装置包括用于引导氢的第一导管（6） 用于引导氧气的第二导管（7） 一种用于在混合状态下燃烧氢和氧的火焰产生装置（5），以在比待处理的半导体衬底（1）的直径更宽的范围上产生向下指示的火焰; 设置在第一管和第二管的每一个中间的流量调节装置（8）和（9），用于调节流过第一管和第二管中的每一个的流体; 以及设置在火焰产生装置下方的用于输送被处理的半导体衬底的传送装置（2），（3）和（14）。

公开(公告)号：US5261966A

公开(公告)日：1993-11-16

申请号：US825589

申请日：1992-01-24

申请人： Noriyoshi Mashimo ,  Katsuya Okumura

发明人： Noriyoshi Mashimo ,  Katsuya Okumura

IPC分类号： B08B3/08 ,  B08B9/02 ,  H01L21/00 ,  C23G1/02

CPC分类号： B08B9/027 ,  B08B3/08 ,  H01L21/67057 ,  B08B2203/005 ,  Y10S134/902

摘要： For cleaning semiconductor wafers in a cleaning vessel by supplying a cleaning fluid through a supply line thereto, a mixer is provided. Deionized water is supplied to the mixer through a deionized water supply line, and a cleaning gas is supplied thereto from a gas reservoir to produce the cleaning fluid. After treating the semiconductor wafers with the cleaning fluid, the deionized water is supplied to the cleaning vessel to rinse them.

公开(公告)号：US5250137A

公开(公告)日：1993-10-05

申请号：US731475

申请日：1991-07-17

申请人： Junichi Arami ,  Toshihisa Nozawa ,  Keiji Horioka ,  Katsuya Okumura

发明人： Junichi Arami ,  Toshihisa Nozawa ,  Keiji Horioka ,  Katsuya Okumura

IPC分类号： C23C14/40 ,  C23C14/50 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  B05C5/00

CPC分类号： H01L21/67069 ,  H01L21/6831

摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.

摘要翻译： 等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。 防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。 等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频 电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上， 导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

公开(公告)号：US5062271A

公开(公告)日：1991-11-05

申请号：US519377

申请日：1990-05-04

申请人： Katsuya Okumura ,  Fumio Kuriyama ,  Yukio Murai ,  Manabu Tsujimura ,  Hiroshi Sobukawa

发明人： Katsuya Okumura ,  Fumio Kuriyama ,  Yukio Murai ,  Manabu Tsujimura ,  Hiroshi Sobukawa

IPC分类号： F04B37/16 ,  B01J3/02 ,  F04B37/06 ,  F04D19/04 ,  H01L21/302 ,  H01L39/24

CPC分类号： F04D19/046 ,  F04B37/06 ,  Y10S417/901

摘要： An evacuation apparatus and method using a turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port of the turbomolecular pump is disclosed. A heat exchanger is provided at the suction port side of the turbomolecular pump to freeze-trap gas molecules from being cooled by a helium refrigerator.The gate valve is disposed upstream of the heat exchanger and is provided in a suction pipe which extends between the vacuum vessel and the turbomolecular pump. In exhausting the vacuum vessel, the gate valve is opened and, in this state, the turbomolecular pump and the helium refrigerator are run. During regeneration, the gate valve is closed, the turbomolecular pump is run, and the heat exchanger is heated by means of a heater or by operation of the helium refrigator being suspended, thereby sublimating molecules freeze-trapped in the heat exchanger.