公开(公告)号：US20090079843A1

公开(公告)日：2009-03-26

申请号：US12092400

申请日：2006-10-31

申请人： Do-Hyung Kim

发明人： Do-Hyung Kim

IPC分类号： H04N5/228

CPC分类号： H04N5/232

摘要： A method of transferring encoded data and an imaging device executing the method thereof are disclosed. The image signal processor according to an embodiment of the present invention has an encoding unit, which generates encoded image data by encoding, in accordance with a predetermined encoding method, image data corresponding to an electrical signal inputted from an image sensor, and a data output unit, which temporarily stores the image data encoded by the encoding unit and transfers the stored encoded image data to a receiving part. The data output unit can input a skip command, which makes the process of a following frame skip, to the image sensor or the encoding unit in case input start information of the following frame is inputted from the image sensor or the encoding unit while a preceding frame is processed by the encoding unit, the skip command. Therefore, it becomes possible to increase the process efficiency of the back-end chip and to reduce the power consumption.

摘要翻译： 公开了传送编码数据的方法和执行其方法的成像装置。 根据本发明的实施例的图像信号处理器具有编码单元，其通过根据预定编码方法通过编码来生成与图像传感器输入的电信号相对应的图像数据和数据输出的编码图像数据 单元，其临时存储由编码单元编码的图像数据，并将存储的编码图像数据传送到接收部分。 在从图像传感器或编码单元输入下一帧的输入开始信息的情况下，数据输出单元可以向图像传感器或编码单元输入跳过命令，跳过命令使后续帧跳过， 帧由编码单元处理，跳过命令。 因此，可以提高后端芯片的处理效率并降低功耗。

公开(公告)号：US20090008623A1

公开(公告)日：2009-01-08

申请号：US12216004

申请日：2008-06-27

申请人： Hyun-Seok Lim ,  In-Sun Park ,  Gyu-Hwan Oh ,  Do-Hyung Kim ,  Shin-Jae Kang

发明人： Hyun-Seok Lim ,  In-Sun Park ,  Gyu-Hwan Oh ,  Do-Hyung Kim ,  Shin-Jae Kang

IPC分类号： H01L47/00 ,  H01L21/311

CPC分类号： H01L21/28518 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： Methods of fabricating a nonvolatile memory device using a resistance material and a nonvolatile memory device are provided. According to example embodiments, a method of fabricating a nonvolatile memory device may include forming at least one semiconductor pattern on a substrate, forming a metal layer on the at least one semiconductor pattern, forming a mixed-phase metal silicide layer, in which at least two phases coexist, by performing at least one heat treatment on the substrate so that the at least one semiconductor pattern may react with the metal layer, and exposing the substrate to an etching gas.

摘要翻译： 提供使用电阻材料制造非易失性存储器件和非易失性存储器件的方法。 根据示例性实施例，制造非易失性存储器件的方法可以包括在衬底上形成至少一个半导体图案，在至少一个半导体图案上形成金属层，形成混合相金属硅化物层，其中至少 两相共存，通过在基板上进行至少一次热处理，使得至少一个半导体图案可与金属层反应，并使基板暴露于蚀刻气体。

公开(公告)号：US20080230373A1

公开(公告)日：2008-09-25

申请号：US12051043

申请日：2008-03-19

申请人： Do-Hyung Kim ,  Shin-Jae Kang ,  In-Sun Park ,  Hyun-Seok Lim ,  Gyu-Hwan Oh

发明人： Do-Hyung Kim ,  Shin-Jae Kang ,  In-Sun Park ,  Hyun-Seok Lim ,  Gyu-Hwan Oh

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C23C14/0623 ,  G11B7/2433 ,  G11B7/252 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.

摘要翻译： 本发明提供了形成相变材料层的方法，包括在碲被挥发并且锑不挥发的温度下提供包括锗（Ge），锑（Sb）和碲（Te）的基板和硫族化物靶，以及 进行溅射工艺以在衬底上形成包括硫族化物材料的相变材料层。 还提供了制造使用其的相变存储器件的方法。

公开(公告)号：US07388264B2

公开(公告)日：2008-06-17

申请号：US10948883

申请日：2004-09-24

申请人： Do-Hyung Kim ,  Jin-Ho Kim ,  Byung-Jun Hwang

发明人： Do-Hyung Kim ,  Jin-Ho Kim ,  Byung-Jun Hwang

IPC分类号： H01L29/06

CPC分类号： H01L29/6653 ,  H01L21/76801 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/76895 ,  H01L21/823425 ,  H01L29/6659

摘要： A semiconductor device having LDD-type source/drain regions and a method of fabricating the same are provided. The semiconductor device includes at least a pair of gate patterns disposed on a semiconductor substrate and LDD-type source/drain regions disposed at both sides of the gate patterns. The substrate having the gate patterns and the LDD-type source/drain regions is covered with a conformal etch stop layer. The etch stop layer is covered with an interlayer insulating layer. The LDD-type source/drain region is exposed by a contact hole that penetrates the interlayer insulating layer and the etch stop layer. The method of forming the LDD-type source/drain regions and the etch stop layer includes forming low-concentration source/drain regions at both sides of the gate patterns and forming the conformal etch stop layer on the substrate having the low-concentration source/drain regions. Gate spacers are then formed on the sidewalls of the gate patterns. Using the gate patterns and the gate spacers as implantation masks, impurity ions are implanted into the semiconductor substrate to form high-concentration source/drain regions. The spacers are then selectively removed. An interlayer insulating layer is formed on the substrate where the spacers are removed.

摘要翻译： 提供具有LDD型源极/漏极区域的半导体器件及其制造方法。 半导体器件包括设置在半导体衬底上的至少一对栅极图案和设置在栅极图案两侧的LDD型源极/漏极区域。 具有栅极图案和LDD型源极/漏极区域的衬底被保形蚀刻停止层覆盖。 蚀刻停止层被层间绝缘层覆盖。 LDD型源极/漏极区域通过穿透层间绝缘层和蚀刻停止层的接触孔露出。 形成LDD型源极/漏极区域和蚀刻停止层的方法包括在栅极图案的两侧形成低浓度源极/漏极区域，并在具有低浓度源/漏极区域的衬底上形成保形蚀刻停止层， 漏区。 然后在栅极图案的侧壁上形成栅极间隔物。 使用栅极图案和栅极间隔物作为注入掩模，将杂质离子注入到半导体衬底中以形成高浓度源极/漏极区域。 然后选择性地去除间隔物。 在基板上形成层间绝缘层，其中隔离物被去除。

公开(公告)号：USD568832S1

公开(公告)日：2008-05-13

申请号：US29279428

申请日：2007-04-30

申请人： Seok Jin Kang ,  Do-Hyung Kim ,  Jung-Hoo Seo

设计人： Seok Jin Kang ,  Do-Hyung Kim ,  Jung-Hoo Seo

公开(公告)号：US20080093962A1

公开(公告)日：2008-04-24

申请号：US11575292

申请日：2005-08-26

申请人： Do-Hyung Kim ,  Moo-Whan Shin ,  Woong-Joon Hwang ,  Chung-Hoon Lee

发明人： Do-Hyung Kim ,  Moo-Whan Shin ,  Woong-Joon Hwang ,  Chung-Hoon Lee

IPC分类号： H01J7/24 ,  H01J9/00

CPC分类号： H01L33/648 ,  F28D15/02 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/15724 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to a luminous device with a heat pipe formed therein and a heat pipe lead for a luminous device. The present invention provides a luminous device including a heat pipe lead or electrode and a luminous chip mounted onto the heat pipe lead or electrode. The luminous device of the present invention further comprises a heat dissipation member, such as a heat radiating plate or thermoelectric device, installed at an end of the heat pipe lead or electrode. Therefore, through the heat pipe lead or electrode of the present invention, a higher heat dissipation effect greater can be obtained as compared with the conventional one. As a result, it is possible to reduce thermal stress on a luminous device and to prevent the occurrence of a phenomenon in which external impurities penetrate into the luminous device. In addition, the cooling efficiency and the light-emitting efficiency of a luminous chip can be maximized by further disposing a heat dissipation member outside the heat pipe.

摘要翻译： 本发明涉及一种其中形成有热管的发光装置和用于发光装置的热管引线。 本发明提供一种发光装置，其包括热管引线或电极以及安装在热管引线或电极上的发光芯片。 本发明的发光装置还包括安装在热管引线或电极的端部的诸如散热板或热电装置的散热构件。 因此，通过本发明的热管引线或电极，与以往相比，能够得到较大的散热效果。 结果，可以降低发光器件上的热应力，并且防止外部杂质渗透到发光器件中的现象的发生。 此外，通过在散热管外部进一步布置散热构件，可以使发光芯片的冷却效率和发光效率最大化。

公开(公告)号：US20080023721A1

公开(公告)日：2008-01-31

申请号：US11575128

申请日：2005-06-23

申请人： Chung-Hoon Lee ,  Do-Hyung Kim ,  Keon-Young Lee

发明人： Chung-Hoon Lee ,  Do-Hyung Kim ,  Keon-Young Lee

IPC分类号： H01L29/22

CPC分类号： H01L33/52 ,  H01L33/486 ,  H01L33/56 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00014

摘要： Disclosed is a light emitting diode (LED) package having multiple molding resins. The LED package includes a pair of lead terminals. At least portions of the pair of lead terminals are embedded in a package main body. The package main body has an opening through which the pair of lead terminals is exposed. An LED die is mounted in the opening and electrically connected to the pair of lead terminals. A first molding resin covers the LED die. A second molding resin with higher hardness than the first molding resin covers the first molding resin. Therefore, stress to be imposed on the LED die can be reduced and the deformation of the molding resins can be prevented.

摘要翻译： 公开了具有多个成型树脂的发光二极管（LED）封装。 LED封装包括一对引线端子。 一对引线端子的至少一部分嵌入在封装主体中。 包装主体具有一对开口，一对引线端子通过该开口露出。 LED管芯安装在开口中并电连接到一对引线端子。 第一模塑树脂覆盖LED芯片。 具有比第一模塑树脂硬度更高的第二模塑树脂覆盖第一模塑树脂。 因此，可以减少施加在LED模具上的应力，并且可以防止模塑树脂的变形。

公开(公告)号：US20080019448A1

公开(公告)日：2008-01-24

申请号：US11779415

申请日：2007-07-18

申请人： Sang-jo LEE ,  Ho-jin Lee ,  Do-Hyung Kim

发明人： Sang-jo LEE ,  Ho-jin Lee ,  Do-Hyung Kim

IPC分类号： H04N11/02

CPC分类号： H04N19/57 ,  H04N19/51 ,  H04N19/533 ,  H04N19/56

摘要： Provided are a motion estimation apparatus and method and an image encoding apparatus and method employing the same. The motion estimation apparatus includes an optimal motion estimation unit performing motion estimation in an initial block mode while skipping remaining block modes excluding the initial block mode from a plurality of block modes of the current block, or performing motion estimation in candidate block modes determined from the plurality of block modes.

摘要翻译： 提供了一种运动估计装置和方法以及采用该运动估计装置和方法的图像编码装置和方法。 运动估计装置包括：最优运动估计单元，在从当前块的多个块模式中跳过除了初始块模式之外的剩余块模式时，以初始块模式执行运动估计，或者在从所述块模式确定的候选块模式中执行运动估计 多个块模式。

公开(公告)号：US20070284993A1

公开(公告)日：2007-12-13

申请号：US11576882

申请日：2005-10-07

申请人： Do-Hyung Kim ,  Chung-Hoon Lee ,  Keon-Young Lee ,  Kwang-Il Park

发明人： Do-Hyung Kim ,  Chung-Hoon Lee ,  Keon-Young Lee ,  Kwang-Il Park

IPC分类号： F21K2/00 ,  G02B17/00

CPC分类号： G02B19/0071 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/19107 ,  H01L2924/00014

摘要： The present invention relates to a side illumination lens and a luminescent device using the same, and provides a body, a total reflection surface with a total reflection slope with respect to a central axis of the body, and a linear and/or curved refractive surface(s) formed to extend from a periphery of the total reflection surface; and a luminescent device including the lens. According to the present invention, a lens with total internal reflection surfaces with different slopes, and a linear and/or curved refractive surface(s) allows light emitted forward from a luminescent chip to be guided to a side of the lens. Further, a linear surface(s) formed in a direction perpendicular or parallel to a central axis of a lens and a curved surface are formed on an edge of the lens so that a process of fabricating the lens is facilitated, thereby reducing a defective rate and fabrication costs of the lens.

摘要翻译： 本发明涉及一种侧面照明透镜及其使用该发光装置的发光装置，其特征在于，具有相对于所述主体的中心轴线具有全反射斜率的全身反射面以及直线和/或弯曲的折射面 形成为从全反射表面的周边延伸; 以及包括该透镜的发光装置。 根据本发明，具有具有不同斜率的全内反射表面以及线性和/或弯曲折射表面的透镜允许从发光芯片向前发射的光被引导到透镜的一侧。 此外，在透镜的边缘上形成在垂直于或平行于透镜的中心轴线的方向上形成的线性表面，从而便于制造透镜的工艺，从而降低了缺陷率 和镜头的制造成本。

公开(公告)号：US20070155075A1

公开(公告)日：2007-07-05

申请号：US11479995

申请日：2006-06-29

申请人： Do-Hyung Kim ,  Dae-Young Seo ,  Ki-Ro Hong

发明人： Do-Hyung Kim ,  Dae-Young Seo ,  Ki-Ro Hong

IPC分类号： H01L21/8234

CPC分类号： H01L21/823412 ,  H01L21/823437 ,  H01L29/66795 ,  H01L29/7851

摘要： A method for forming a fin transistor includes forming a fin active region, depositing a thin layer doped with impurities over a semiconductor substrate, and forming a channel by diffusing the impurities into the fin active region of the fin transistor. In detail of the fin transistor formation, a fin active region is formed, and a patterned pad nitride layer is formed over the fin active region. A thin layer containing boron is deposited over the fin active region and isolation regions. Boron in the thin layer is diffused into the fin active region to form a channel.

摘要翻译： 一种用于形成鳍式晶体管的方法，包括：形成翅片有源区，在半导体衬底上沉积掺杂有杂质的薄层，以及通过将杂质扩散到鳍式晶体管的鳍有源区中形成沟道。 详细说明鳍状晶体管的形成，形成翅片有源区，并且在翅片有源区上形成图案化的衬垫氮化物层。 含有硼的薄层沉积在翅片活性区域和隔离区域上。 薄层中的硼扩散到翅片活性区域中以形成通道。