System and method for reading multiple magnetic tunnel junctions with a single select transistor
    51.
    发明授权
    System and method for reading multiple magnetic tunnel junctions with a single select transistor 有权
    用单个选择晶体管读取多个磁隧道结的系统和方法

    公开(公告)号:US07577020B2

    公开(公告)日:2009-08-18

    申请号:US11865481

    申请日:2007-10-01

    IPC分类号: G11C11/00 G11C11/15 G11C15/00

    摘要: A method for reading two or more magnetic tunnel junctions (MTJs) which are serially connected with a select transistor to form a memory string, the method comprises turning on the select transistor, measuring a first resistance of the memory string, storing the first resistance, toggling a predetermined one of the MTJs, measuring a second resistance of the memory string after the toggling, toggling back the predetermined one of the MTJs and comparing the first and second resistances with a plurality of predetermined resistance values, wherein the comparison result leads to a determination of the data stored in the MTJs.

    摘要翻译: 一种用于读取与选择晶体管串联连接以形成存储器串的两个或多个磁隧道结(MTJ)的方法,所述方法包括接通选择晶体管,测量存储器串的第一电阻,存储第一电阻, 切换MTJ中的预定的一个,在切换之后测量存储器串的第二电阻,反转预定的一个MTJ,并用多个预定电阻值比较第一和第二电阻,其中比较结果导致 确定存储在MTJ中的数据。

    MRAM arrays and methods for writing and reading magnetic memory devices
    52.
    发明授权
    MRAM arrays and methods for writing and reading magnetic memory devices 有权
    MRAM阵列和写入和读取磁存储器件的方法

    公开(公告)号:US07436698B2

    公开(公告)日:2008-10-14

    申请号:US11610739

    申请日:2006-12-14

    IPC分类号: G11C11/00

    CPC分类号: G11C11/1673

    摘要: A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

    摘要翻译: 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列,包括对与选择存储器单元相对应的所选读取行的第一信号进行采样,向选择存储单元施加磁场,对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

    High speed sensing amplifier for an MRAM cell
    53.
    发明授权
    High speed sensing amplifier for an MRAM cell 有权
    用于MRAM单元的高速感测放大器

    公开(公告)号:US07286429B1

    公开(公告)日:2007-10-23

    申请号:US11379854

    申请日:2006-04-24

    IPC分类号: G11C11/00

    摘要: A method and circuits are disclosed for sensing an output of a memory cell having high and low resistance states. A high reference cell is in high resistance state and a low reference cell is in low resistance state. The resistance of the high reference cell in high resistance state has a first margin of difference from the resistance of the memory cell in high resistance state. The resistance of the low reference cell in low resistance state has a second margin of difference from the resistance of the memory cell in low resistance state. Differential amplifiers coupled to the memory cell and the high and low reference cells provide a digital output representing the resistance state of the memory cell.

    摘要翻译: 公开了用于感测具有高和低电阻状态的存储单元的输出的方法和电路。 高参考电池处于高电阻状态,低参考电池处于低电阻状态。 高参考电池在高电阻状态下的电阻与高电阻状态下的存储单元的电阻具有第一差值。 低电阻状态下的低参考电池的电阻与低电阻状态下的存储单元的电阻具有第二差值。 耦合到存储器单元和高和低参考单元的差分放大器提供表示存储器单元的电阻状态的数字输出。

    Magnetic shielding for magnetically sensitive semiconductor devices
    57.
    发明授权
    Magnetic shielding for magnetically sensitive semiconductor devices 有权
    磁敏半导体器件的磁屏蔽

    公开(公告)号:US07183617B2

    公开(公告)日:2007-02-27

    申请号:US11060000

    申请日:2005-02-17

    IPC分类号: H01L27/14

    摘要: A magnetic shielding device is provided for protecting at least one magnetically sensitive component on a substrate according to embodiments of the present invention. The device comprises a first shield having a top portion, and one or more side portions, wherein the top and side portions along with the substrate encloses the magnetic sensitive component within for protecting the same from an external magnetic field, and wherein the magnetic shielding device contains at least two magnetic shielding materials with one having a relatively higher magnetic permeability property but lower magnetic saturation property while the other having a relatively lower magnetic permeability property but higher magnetic saturation property.

    摘要翻译: 根据本发明的实施例,提供了一种磁屏蔽装置,用于保护基板上的至少一个磁敏部件。 该装置包括具有顶部部分和一个或多个侧部部分的第一屏蔽件,其中顶部和侧部与基板一起包围磁敏部件,以便将其与外部磁场保护起来,并且其中磁屏蔽装置 包含至少两个磁屏蔽材料,具有较高磁导率性能但具有较低磁饱和性能的磁屏蔽材料,而另一种具有较低的磁导率性能但较高的磁饱和性能。

    Write line design in MRAM
    58.
    发明申请
    Write line design in MRAM 审中-公开
    在MRAM中写线设计

    公开(公告)号:US20060278908A1

    公开(公告)日:2006-12-14

    申请号:US11505141

    申请日:2006-08-16

    IPC分类号: H01L29/94

    CPC分类号: G11C11/15 G11C5/063

    摘要: A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

    摘要翻译: 公开了一种磁性随机存取存储器件(MRAM)及其形成方法。 MRAM具有与第一写入线正交的磁性隧道结(MTJ)器件,第一写入线和第二写入线,其中第一和第二写入线中的至少一个具有比MTJ窄的宽度。

    Magnetic shielding for magnetically sensitive semiconductor devices
    59.
    发明申请
    Magnetic shielding for magnetically sensitive semiconductor devices 有权
    磁敏半导体器件的磁屏蔽

    公开(公告)号:US20060180880A1

    公开(公告)日:2006-08-17

    申请号:US11060000

    申请日:2005-02-17

    IPC分类号: H01L29/82

    摘要: A magnetic shielding device is provided for protecting at least one magnetically sensitive component on a substrate according to embodiments of the present invention. The device comprises a first shield having a top portion, and one or more side portions, wherein the top and side portions along with the substrate encloses the magnetic sensitive component within for protecting the same from an external magnetic field, and wherein the magnetic shielding device contains at least two magnetic shielding materials with one having a relatively higher magnetic permeability property but lower magnetic saturation property while the other having a relatively lower magnetic permeability property but higher magnetic saturation property.

    摘要翻译: 根据本发明的实施例,提供了一种磁屏蔽装置,用于保护基板上的至少一个磁敏部件。 该装置包括具有顶部部分和一个或多个侧部部分的第一屏蔽件,其中顶部和侧部与基板一起包围磁敏部件,以便将其与外部磁场保护起来,并且其中磁屏蔽装置 包含至少两个磁屏蔽材料,具有较高磁导率性能但具有较低磁饱和性能的磁屏蔽材料,而另一种具有较低的磁导率性能但较高的磁饱和性能。