公开(公告)号：US07659214B2

公开(公告)日：2010-02-09

申请号：US11865060

申请日：2007-09-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/3145 ,  C23C8/34 ,  H01L21/28202 ,  H01L29/518

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.

摘要翻译： 在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长 在基板上的氧化物膜。 所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。 在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。 根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

公开(公告)号：US20090324828A1

公开(公告)日：2009-12-31

申请号：US12491313

申请日：2009-06-25

申请人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

发明人： HITOSHI KATO ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转盘，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US07635655B2

公开(公告)日：2009-12-22

申请号：US11278054

申请日：2006-03-30

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： H01L21/31

CPC分类号： H01L21/3143 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/31662

摘要： A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.

摘要翻译： 一种在批处理系统中对多个基板进行氧化处理的方法。 根据一个实施方案，该方法包括选择用于基材的基于N2O的氧化方法，其包括含有在分批处理系统的处理室中热分解为N 2，O 2和NO副产物的N 2 O的第一工艺气体， 用于底物的基于NO的氧化方法，包括含有N 2，O 2和NO的第二工艺气体，其摩尔浓度模拟N 2 O基氧化过程中的N 2，O 2和NO副产物的摩尔浓度。 根据本发明的另一个实施方案，NO基氧化法含有NO，O 2和惰性气体。

公开(公告)号：US07604841B2

公开(公告)日：2009-10-20

申请号：US10814713

申请日：2004-03-31

申请人： Raymond Joe ,  John Gumpher ,  Anthony Dip

发明人： Raymond Joe ,  John Gumpher ,  Anthony Dip

IPC分类号： C23C16/30

CPC分类号： C23C16/4404 ,  H01L21/3185

摘要： A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.

摘要翻译： 一种用于在处理系统的处理室中延长室清洁过程之间的时间的方法。 在处理室中的腔室部件上形成颗粒减少膜，以减少衬底处理期间处理室中的颗粒形成，至少一个衬底被引入到处理室中，在处理室中执行制造工艺， 从处理室移除至少一个基板。 颗粒减少膜可以沉积在清洁室部件上或者形成在室部件上的材料沉积物上。 或者，可以通过化学改变室内部件上的材料沉积物的至少一部分来形成颗粒减少膜。 减少颗粒的膜可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

公开(公告)号：US20090246971A1

公开(公告)日：2009-10-01

申请号：US12058470

申请日：2008-03-28

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31

CPC分类号： H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.

摘要翻译： 一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。 该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在 从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。 该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。 该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

公开(公告)号：US07501349B2

公开(公告)日：2009-03-10

申请号：US11393736

申请日：2006-03-31

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/67109

摘要： A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a sequential oxide removal process. The sequential oxide removal process includes exposing the substrate at a first substrate temperature to a flow of a first etching gas containing F2 to partially remove the oxide layer from the substrate, raising the temperature of the substrate from the first substrate temperature to a second substrate temperature, and exposing the substrate at the second temperature to a flow of a second etching gas containing H2 to further remove the oxide layer from the substrate. In one embodiment, a film may be formed on the substrate following the sequential oxide removal process.

摘要翻译： 提供了从基板去除氧化物的方法。 该方法包括在基板具有形成在其上的氧化物层的处理室中提供基板，并且执行顺序的氧化物去除工艺。 顺序氧化物去除工艺包括将第一衬底温度下的衬底暴露于含有F2的第一蚀刻气体的流动以从衬底部分地去除氧化物层，从而将衬底的温度从第一衬底温度升高到第二衬底温度 并且将第二温度下的衬底暴露于含有H 2的第二蚀刻气体的流中，以进一步从衬底去除氧化物层。 在一个实施例中，可以在顺序氧化物去除工艺之后在衬底上形成膜。

公开(公告)号：US20080242109A1

公开(公告)日：2008-10-02

申请号：US11694643

申请日：2007-03-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/314

CPC分类号： H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5×1012 per cc.

摘要翻译： 用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。 湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。 在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。 在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。 根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12的界面态密度 cc。

公开(公告)号：US20080193643A1

公开(公告)日：2008-08-14

申请号：US11673852

申请日：2007-02-12

申请人： Anthony Dip

发明人： Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/68764 ,  H01L21/68771

摘要： Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.

摘要翻译： 使用原子层沉积（ALD）沉积薄膜的系统和方法。 沉积系统包括具有外围侧壁的处理室，将处理室内的处理空间分成至少第一和第二隔室的隔板，以及支撑处理空间内的基板的盘片。 盘片相对于固定的外围侧壁和隔间旋转衬底。 第一隔室接收用于在每个基板上沉积层的工艺材料。 注射加工材料的注射器通过周边侧壁与第一隔室连通。

公开(公告)号：US20070039924A1

公开(公告)日：2007-02-22

申请号：US11206056

申请日：2005-08-18

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： C03C25/68 ,  B44C1/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： C03C15/00 ,  H01L21/02046 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, the substrate having an oxide layer formed thereon, and exposing the substrate to an etching gas containing F2 gas at a first temperature to remove the oxide layer from the substrate. The substrate may subsequently be heated to a second temperature greater than the first temperature, and a film may then be formed on the substrate at the second temperature. In one embodiment, a Si film is epitaxially formed on a Si substrate.

摘要翻译： 一种用于处理衬底的方法和系统包括在处理室中提供衬底，衬底具有形成在其上的氧化物层，并将衬底暴露于含有第一温度的F 2气体的蚀刻气体至 从基板上去除氧化层。 随后将衬底加热到​​大于第一温度的第二温度，然后可以在第二温度下在衬底上形成膜。 在一个实施例中，在Si衬底上外延形成Si膜。

公开(公告)号：US20070037412A1

公开(公告)日：2007-02-15

申请号：US11462234

申请日：2006-08-03

申请人： Anthony Dip ,  Sadao Sasaki ,  Michael Toeller ,  Kimberly Reid

发明人： Anthony Dip ,  Sadao Sasaki ,  Michael Toeller ,  Kimberly Reid

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/0236 ,  C23C16/405 ,  C23C16/45546 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/02312 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31645

摘要： An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

摘要翻译： 在间歇晶片处理系统中形成HfO 2高k电介质层的原位方法。 该方法包括首先将多个晶片加载到处理室中，然后用第一氧化器预处理处理室中的多个晶片。 在预处理晶片之后，并且不从处理室移除晶片，该方法然后包括通过原子层沉积在多个晶片上沉积HfO 2，其包括多个沉积循环，每个沉积循环 循环，包括将处理室中的多个晶片交替暴露于第二氧化剂和铪前体。 铪前体选自叔丁醇铪（HTB）或四乙基铪铪（TDEAH）。