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公开(公告)号:US08268220B2
公开(公告)日:2012-09-18
申请号:US12905192
申请日:2010-10-15
申请人: Frank Y. Xu , Pankaj B. Lad , Ian Matthew McMackin , Van Nguyen Truskett , Edward Brian Fletcher
发明人: Frank Y. Xu , Pankaj B. Lad , Ian Matthew McMackin , Van Nguyen Truskett , Edward Brian Fletcher
CPC分类号: G03F7/0002 , B41C1/10 , B41M7/0072 , B41M7/0081 , B82Y10/00 , B82Y30/00 , B82Y40/00 , Y10S977/887
摘要: Improved wetting characteristics together with improved release characteristics with respect to a substrate and an imprint lithography mold having imprinting material disposed therebetween.
摘要翻译: 改进的润湿特性以及相对于基底的改进的剥离特性和其间设置有压印材料的压印光刻模具。
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公开(公告)号:US20120214066A1
公开(公告)日:2012-08-23
申请号:US13398442
申请日:2012-02-16
申请人: Michael N. Miller , Fen Wan , Vikramjit Singh , Darren D. Donaldson , Gerard M. Schmid , Sidlgata V. Sreenivasan , Frank Y. Xu
发明人: Michael N. Miller , Fen Wan , Vikramjit Singh , Darren D. Donaldson , Gerard M. Schmid , Sidlgata V. Sreenivasan , Frank Y. Xu
CPC分类号: B82Y30/00 , H01M4/134 , H01M4/1395 , H01M4/386
摘要: A silicon nanowire array including a multiplicity of silicon nanowires extending from a silicon substrate. Cross-sectional shape of the silicon nanowires and spacing between the silicon nanowires can be selected to maximize the ratio of the surface area of the silicon nanowires to the volume of the nanowire array. Methods of forming the silicon nanowire array include a nanoimprint lithography process to form a template for the silicon nanowire array and an electroless etching process to etch the template formed by the nanoimprint lithography process.
摘要翻译: 一种硅纳米线阵列,包括从硅衬底延伸的多个硅纳米线。 可以选择硅纳米线的横截面形状和硅纳米线之间的间隔,以最大化硅纳米线的表面积与纳米线阵列的体积的比率。 形成硅纳米线阵列的方法包括形成硅纳米线阵列的模板的纳米压印光刻工艺和蚀刻由纳米压印光刻工艺形成的模板的无电蚀刻工艺。
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公开(公告)号:US20110277833A1
公开(公告)日:2011-11-17
申请号:US13105695
申请日:2011-05-11
IPC分类号: H01L31/0224 , H01L31/0232
CPC分类号: H01L31/0682 , H01L31/022441 , H01L31/18 , Y02E10/547
摘要: Variations of interdigitated backside contact (IBC) solar cells having patterned areas formed using nano imprint lithography are described.
摘要翻译: 描述了具有使用纳米压印光刻形成的图案区域的叉指背面接触(IBC)太阳能电池的变化。
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公开(公告)号:US20110190463A1
公开(公告)日:2011-08-04
申请号:US13017259
申请日:2011-01-31
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00
摘要: A lithography method for forming nanoparticles includes patterning sacrificial material on a multilayer substrate. In some cases, the pattern is transferred to or into a removable layer of the multilayer substrate, and functional material is disposed on the removable layer of the multilayer substrate and solidified. At least a portion of the functional material is then removed to expose protrusions of the removable layer, and pillars of the functional material are released from the removable layer to yield nanoparticles. In other cases, the multilayer substrate includes the functional material, and the pattern is transferred to or into a removable layer of the multilayer substrate. The sacrificial layer is removed, and pillars of the functional material are released from the removable layer to yield nanoparticles.
摘要翻译: 用于形成纳米颗粒的光刻方法包括在多层基板上图案化牺牲材料。 在一些情况下,将图案转移到多层基板的可移除层或其中,并且将功能材料设置在多层基板的可移除层上并固化。 然后去除功能材料的至少一部分以暴露可移除层的突起,并且功能材料的柱从可除去的层释放以产生纳米颗粒。 在其他情况下,多层基板包括功能材料,并且图案被转移到多层基板的可移除层中或其中。 去除牺牲层,并且功能材料的柱从可除去的层中释放出来以产生纳米颗粒。
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55.
公开(公告)号:US20110180127A1
公开(公告)日:2011-07-28
申请号:US13016006
申请日:2011-01-28
申请人: Fen Wan , Shuqiang Yang , Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Michael N. Miller , Darren D. Donaldson
发明人: Fen Wan , Shuqiang Yang , Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Michael N. Miller , Darren D. Donaldson
IPC分类号: H01L31/02 , H01L31/0232
CPC分类号: H01L51/4213 , B82Y10/00 , H01L51/0017 , H01L51/0037 , H01L51/0047 , H01L51/442 , H01L51/447 , Y02E10/549
摘要: Fabricating a solar cell stack includes forming a nanopatterned polymeric layer on a first surface of a silicon wafer and etching the first surface of the silicon wafer to transfer a pattern of the nanopatterned polymeric layer to the first surface of the silicon wafer. A layer of reflective electrode material is formed on a second surface of the silicon wafer. The nanopatterned first surface of the silicon wafer undergoes a buffered oxide etching. After the buffered oxide etching, the nanopatterned first surface of the silicon wafer is treated to decrease a contact angle of water on the nanopatterned first surface. Electron donor material is deposited on the nanopatterned first surface of the silicon wafer to form an electron donor layer, and a transparent electrode material is deposited on the electron donor layer to form a transparent electrode layer on the electron donor layer.
摘要翻译: 制造太阳能电池堆包括在硅晶片的第一表面上形成纳米图案的聚合物层并蚀刻硅晶片的第一表面以将纳米图案化的聚合物层的图案转移到硅晶片的第一表面。 在硅晶片的第二表面上形成反射电极材料层。 硅晶片的纳米图案化的第一表面经历缓冲氧化物蚀刻。 在缓冲氧化物蚀刻之后,处理硅晶片的纳米图案化的第一表面以降低纳米图案化的第一表面上的水的接触角。 电子给体材料沉积在硅晶片的纳米图案化的第一表面上以形成电子供体层,并且在电子给体层上沉积透明电极材料,以在电子给体层上形成透明电极层。
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公开(公告)号:US07759407B2
公开(公告)日:2010-07-20
申请号:US11187406
申请日:2005-07-22
申请人: Frank Y. Xu
发明人: Frank Y. Xu
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0388
摘要: The present invention is directed to a composition of adhering together first and second materials. The composition features a multi-functional reactive compound that includes a backbone group and first and second functional groups; a cross-linker, and a catalyst. The first functional group is responsive to a first actinic energy to form cross-linked molecules and to adhere a subset of the cross-linked molecules to the first material. The second functional group is responsive to a second actinic energy, differing from the first actinic energy to adhere to the second material.
摘要翻译: 本发明涉及将第一和第二材料粘合在一起的组合物。 该组合物的特征在于多功能反应性化合物,其包括主链基团和第一和第二官能团; 交联剂和催化剂。 第一官能团响应于第一光化能以形成交联分子并将交联分子的子集粘附到第一材料上。 第二官能团响应于第二光化能,其与第一光化能不同,以粘附到第二材料。
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公开(公告)号:US20100112236A1
公开(公告)日:2010-05-06
申请号:US12606588
申请日:2009-10-27
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , H01J37/32431 , Y10T428/30 , Y10T428/31663
摘要: Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate.
摘要翻译: 描述了将基板粘合到图案层上的系统和方法。 包括基材的原位清洁和调理,以及在基材和图案化层之间施加粘合层,以及在粘合材料和基材之间形成中间层。
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58.
公开(公告)号:US20090197057A1
公开(公告)日:2009-08-06
申请号:US12364979
申请日:2009-02-03
申请人: Frank Y. Xu , Weijun Liu
发明人: Frank Y. Xu , Weijun Liu
CPC分类号: G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/24802
摘要: A nano-imprint lithography process includes forming a multiplicity of hydroxyl groups on a surface of a substantially inorganic nano-imprint lithography template, heating the template, and reacting a pre-selected percentage of the hydroxyl groups on the surface of the template with a mono-functional, non-fluorinated compound to form a monolayer coating on the surface of the nano-imprint lithography template. The coated template may be contacted with a polymerizable composition disposed on a nano-imprint lithography substrate, and the polymerizable composition solidified to form a patterned layer. The coated template is separated from the patterned layer.
摘要翻译: 纳米压印光刻工艺包括在基本无机纳米压印光刻模板的表面上形成多个羟基,加热模板,并使模板表面上预选择的羟基百分数与单体 官能的非氟化合物,以在纳米压印光刻模板的表面上形成单层涂层。 涂布的模板可以与设置在纳米压印光刻基材上的可聚合组合物接触,并且可聚合组合物固化以形成图案化层。 将涂覆的模板与图案化层分离。
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公开(公告)号:US07259102B2
公开(公告)日:2007-08-21
申请号:US11240708
申请日:2005-09-30
申请人: David C. Wang , Frank Y. Xu
发明人: David C. Wang , Frank Y. Xu
IPC分类号: H01L21/302
CPC分类号: H01L21/31055 , B82Y10/00 , B82Y40/00 , C09D183/04 , G03F7/0002 , G03F7/094 , G03F7/162 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/3122 , C08L2666/28
摘要: The present invention is directed to a method of etching a multi-layer structure formed from a layer of a first material and a layer of a second material differing from the first material to obtain a desired degree of planarization. To that end, the method includes creating a first set of process conditions to etch the first material, generating a second set of process conditions to etch the second material; and establishing an additional set of process conditions to concurrently etch the first and second materials at substantially the same etch rate.
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60.
公开(公告)号:US07122482B2
公开(公告)日:2006-10-17
申请号:US10694284
申请日:2003-10-27
IPC分类号: H01L21/302 , H01L21/461
CPC分类号: B29C43/003 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要: One embodiment of the present invention is a method for generating patterned features on a substrate that includes: (a) forming a first layer on at least a portion of a surface of the substrate, the first layer comprising at least one layer of a first material, which one layer abuts the surface of the substrate; (b) forming a second layer of a second material on at least a portion of the first layer, which second layer is imprinted with the patterned features; (c) removing at least portions of the second layer to extend the patterned features to the first layer; and (d) removing at least portions of the first layer to extend the patterned features to the substrate; wherein the first layer and the second layer may be exposed to an etching process that undercuts the patterned features, and the first material may be lifted-off.
摘要翻译: 本发明的一个实施例是一种用于在衬底上产生图案化特征的方法,其包括:(a)在衬底的表面的至少一部分上形成第一层,第一层包括至少一层第一材料 其中一层邻接衬底的表面; (b)在所述第一层的至少一部分上形成第二材料的第二层,所述第二层被印刷所述图案化特征; (c)去除所述第二层的至少一部分以将所述图案化特征延伸到所述第一层; 和(d)去除所述第一层的至少一部分以将所述图案化特征延伸到所述基底; 其中第一层和第二层可以暴露于蚀刻过程,其蚀刻图案化的特征,并且第一材料可以被剥离。
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