公开(公告)号：US08124972B2

公开(公告)日：2012-02-28

申请号：US12429486

申请日：2009-04-24

申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Shunpei Yamazaki ,  Takeyoshi Watabe

发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Shunpei Yamazaki ,  Takeyoshi Watabe

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01J37/32091 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer.

摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，在具有绝缘表面的基板上; 形成在非晶结构中包含多个晶体区域的沟道形成区域的半导体层; 赋予形成源极区域和漏极区域的一种导电型的杂质半导体层; 以及由位于半导体层和杂质半导体层之间的非晶半导体形成的缓冲层。 薄膜晶体管包括晶体区域，其包括微小晶粒和倒锥形或倒棱锥晶粒，其每一个从远离栅极绝缘层和半导体层之间的界面的位置朝向半导体层的方向大致径向地生长 沉积在不到达杂质半导体层的区域中。

公开(公告)号：US08101442B2

公开(公告)日：2012-01-24

申请号：US12390264

申请日：2009-02-20

申请人： Hidekazu Miyairi ,  Shigeki Komori ,  Toshiyuki Isa ,  Atsushi Umezaki

发明人： Hidekazu Miyairi ,  Shigeki Komori ,  Toshiyuki Isa ,  Atsushi Umezaki

IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/14 ,  H01L21/15 ,  H01L31/036

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262

摘要： A manufacture process of a thin film transistor mounted on an EL display device is simplified. A thin film transistor is manufactured by stacking a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; forming a first resist mask over the stacked films; performing first etching to form a thin-film stack body; performing second etching by side etching is conducted on the thin-film stack body to form a gate electrode layer; and forming a source and drain electrode layer and the like with use of a second resist mask. An EL display device is manufactured using the thin film transistor.

摘要翻译： 安装在EL显示装置上的薄膜晶体管的制造工艺简化。 通过堆叠第一导电膜，绝缘膜，半导体膜，杂质半导体膜和第二导电膜来制造薄膜晶体管; 在堆叠的膜上形成第一抗蚀剂掩模; 执行第一蚀刻以形成薄膜堆叠体; 在薄膜堆叠体上进行侧蚀刻进行第二蚀刻，形成栅电极层; 以及使用第二抗蚀剂掩模形成源极和漏极电极层等。 使用薄膜晶体管制造EL显示装置。

公开(公告)号：US20110275191A1

公开(公告)日：2011-11-10

申请号：US13186803

申请日：2011-07-20

申请人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

IPC分类号： H01L21/02

CPC分类号： H01L27/1266 ,  H01L27/1288 ,  H01L29/66765

摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.

摘要翻译： 提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤 第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

公开(公告)号：US07915099B2

公开(公告)日：2011-03-29

申请号：US11785966

申请日：2007-04-23

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/082 ,  B23K26/0821 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.

摘要翻译： 由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。 结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。 在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到 当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描 开始或结束

公开(公告)号：US07812348B2

公开(公告)日：2010-10-12

申请号：US12390954

申请日：2009-02-23

申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

IPC分类号： H01L27/14

CPC分类号： H01L29/78609 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

摘要： A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.

摘要翻译： 解决了导通状态电流和截止电流的问题的薄膜晶体管，以及能够进行高速运转的薄膜晶体管。 薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极和漏极区域，其间具有间隔，以便与具有栅极绝缘层的栅电极重叠 插入在栅电极和杂质半导体层之间; 添加作为受体的杂质元素的一对半导体层，与栅极电极和杂质半导体层重叠在栅极绝缘层上，并且在沟道长度方向上间隔设置; 以及与所述栅绝缘层和所述一对半导体层接触并在所述一对半导体层之间延伸的非晶半导体层。

公开(公告)号：US20100244034A1

公开(公告)日：2010-09-30

申请号：US12726040

申请日：2010-03-17

申请人： Hidekazu Miyairi

发明人： Hidekazu Miyairi

IPC分类号： H01L33/16 ,  H01L29/786

CPC分类号： H01L21/67207 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78696

摘要： A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region.

摘要翻译： 薄膜晶体管包括栅电极; 栅极绝缘层，被设置为覆盖栅电极; 半导体层，设置在所述栅极绝缘层上以与所述栅电极重叠; 部分地设置在半导体层上并形成源极区域和漏极区域的杂质半导体层; 以及布置层，其设置在所述杂质半导体层上，其中所述源极区域和所述漏极区域的宽度比所述半导体层的宽度窄，并且其中所述半导体层的宽度至少部分地在 源极区和漏极区。

公开(公告)号：US20100230683A1

公开(公告)日：2010-09-16

申请号：US12788367

申请日：2010-05-27

申请人： Hidekazu Miyairi

发明人： Hidekazu Miyairi

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L21/764 ,  H01L27/1214

摘要： Disclosed is a manufacturing method of a thin film transistor, which enables the formation of a thin film transistor by using only one photomask. The method includes: over a substrate sequentially forming a first insulating film, a first conductive film, a second insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; forming a resist mask thereover using a first photomask; performing a first etching to allow the side surface of the layers including an upper portion of the first insulating film, the first conductive film, the second insulating film, the semiconductor film, the impurity semiconductor film, and the second conductive film to be coplanar to a side surface of the resist mask; and performing a second etching to selectively etch the first conductive film to allow the side surface of the first conductive film is located inside the side surface of the layers.

摘要翻译： 公开了一种薄膜晶体管的制造方法，其能够仅使用一个光掩模来形成薄膜晶体管。 该方法包括：顺序地形成第一绝缘膜，第一导电膜，第二绝缘膜，半导体膜，杂质半导体膜和第二导电膜的基板上; 使用第一光掩模在其上形成抗蚀剂掩模; 执行第一蚀刻以允许包括第一绝缘膜，第一导电膜，第二绝缘膜，半导体膜，杂质半导体膜和第二导电膜的上部的层的侧表面共面 抗蚀剂掩模的侧表面; 以及执行第二蚀刻以选择性地蚀刻所述第一导电膜以允许所述第一导电膜的侧表面位于所述层的侧表面内。

公开(公告)号：US07749907B2

公开(公告)日：2010-07-06

申请号：US11841361

申请日：2007-08-20

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/461

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20100078071A1

公开(公告)日：2010-04-01

申请号：US12566015

申请日：2009-09-24

申请人： Hidekazu Miyairi ,  Takuya Hirohashi ,  Akihisa Shimomura

发明人： Hidekazu Miyairi ,  Takuya Hirohashi ,  Akihisa Shimomura

IPC分类号： H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes one or more unit cells between a first electrode and a second electrode, in which a semiconductor junction is formed by sequentially stacking: a first impurity semiconductor layer of one conductivity type; an intrinsic non-single-crystal semiconductor layer including an NH group or an NH2 group; and a second impurity semiconductor layer of opposite conductivity type to the first impurity semiconductor layer. In the non-single-crystal semiconductor layer of a unit cell on a light incident side, the nitrogen concentration measured by secondary ion mass spectrometry is 5×1018/cm3 or more and 5×1020/cm3 or less and oxygen and carbon concentrations measured by secondary ion mass spectrometry are less than 5×1018/cm3.

摘要翻译： 光电转换装置包括在第一电极和第二电极之间的一个或多个单位电池，其中通过依次层叠形成半导体结：一种导电类型的第一杂质半导体层; 包含NH基或NH 2基的本征非单晶半导体层; 以及与第一杂质半导体层相反的导电类型的第二杂质半导体层。 在光入射侧的单电池的非单晶半导体层中，通过二次离子质谱法测定的氮浓度为5×1018 / cm 3以上且5×10 20 / cm 3以下，并且测量了氧和碳浓度 通过二次离子质谱分析，小于5×1018 / cm3。

公开(公告)号：US20090061573A1

公开(公告)日：2009-03-05

申请号：US12230048

申请日：2008-08-22

申请人： Hidekazu Miyairi ,  Shinya Sasagawa ,  Akihiro Ishizuka

发明人： Hidekazu Miyairi ,  Shinya Sasagawa ,  Akihiro Ishizuka

IPC分类号： H01L21/336

CPC分类号： H01L29/6675 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L33/0058 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias.

摘要翻译： 本发明提供了一种制造具有少量漏电流的高可靠性半导体器件的方法。 在制造薄膜晶体管的方法中，使用抗蚀剂掩模进行蚀刻以在薄膜晶体管中形成背沟道部分，去除抗蚀剂掩模，蚀刻一部分后沟道以除去蚀刻残留物等 留在后通道部分，由此可以减少由残渣等引起的泄漏电流。 背沟道部分的蚀刻步骤可以通过使用非偏压的干蚀刻来进行。