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    Mobile cellular spectroscopy
    53.
    发明授权
    Mobile cellular spectroscopy 有权

    公开(公告)号：US09921105B2

    公开(公告)日：2018-03-20

    申请号：US14614575

    申请日：2015-02-05

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  Sergio A. Bermudez Rodriguez ,  Levente Klein ,  Theodore G. van Kessel

    IPC: G01J3/28 ,  G01J3/02 ,  G01J3/18 ,  G01J3/10

    CPC classification number: G01J3/2823 ,  G01J3/0264 ,  G01J3/0272 ,  G01J3/0291 ,  G01J3/10 ,  G01J3/18

    Abstract: The present invention discloses a spectrometer apparatus comprising a mobile device including an integrated camera, having a camera lens and an image sensor. The camera lens is located within a body of the mobile device that comprises a detachable housing coupled to the body of the mobile device. The detachable housing includes a first end and a second end opposed to the first end. The first end includes an optical input and the second end includes an opening that is substantially aligned with the camera lens. An optical spectrometer device is located within the housing and optically coupled to both the optical input at the first end of the housing and the camera lens at the second end of the housing. The optical spectrometer device receives a target image from the optical input and generates a spectral image that is received by the image sensor via the camera lens.

    Butt-coupled buried waveguide photodetector
    59.
    发明授权
    Butt-coupled buried waveguide photodetector 有权
    对接耦合埋地波导光电探测器

    公开(公告)号：US09229164B2

    公开(公告)日：2016-01-05

    申请号：US13868477

    申请日：2013-04-23

    Applicant: International Business Machines Corporation

    Inventor： Solomon Assefa ,  William M. Green ,  Steven M. Shank ,  Yurii A. Vlasov

    IPC: H01L31/18 ,  H01L31/08 ,  H01L31/0232 ,  G02B6/13 ,  G02B6/12 ,  G02B6/132

    CPC classification number: G02B6/13 ,  G02B6/12004 ,  G02B6/132

    Abstract: A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolates the first and second silicon-on-insulator region. Within the STI region, a germanium material is deposited adjacent an end facet of the semiconductor optical waveguide. The germanium material forms an active region that receives propagating optical signals from the end facet of the semiconductor optical waveguide.

    Abstract translation: 形成具有光电检测器和CMOS器件的集成光子半导体结构的方法可以包括在绝缘体上的第一绝缘体区域上形成CMOS器件，在第二绝缘体上硅区域上形成硅光波导，并形成 浅沟槽隔离（STI）区域，使得浅沟槽隔离电隔离第一和第二绝缘体上硅区域。 在STI区域内，锗材料沉积在半导体光波导的端面附近。 锗材料形成从半导体光波导的端面接收传播光信号的有源区。

    FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX USING SELECTIVE EPITAXY ON BULK SEMICONDUCTOR SUBSTRATES FOR PHOTONICS DEVICE INTEGRATION
    60.
    发明申请
    FABRICATION OF LOCALIZED SOI ON LOCALIZED THICK BOX USING SELECTIVE EPITAXY ON BULK SEMICONDUCTOR SUBSTRATES FOR PHOTONICS DEVICE INTEGRATION 审中-公开
    使用选择性外延在本体化的薄膜上制造本地化SOI在大量半导体衬底上用于光电子器件集成

    公开(公告)号：US20150348827A1

    公开(公告)日：2015-12-03

    申请号：US14822376

    申请日：2015-08-10

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Solomon Assefa ,  William M. Green ,  Marwan H. Khater ,  Yurri A. Vlasov

    IPC: H01L21/762 ,  H01L21/027

    CPC classification number: H01L21/76205 ,  H01L21/0274 ,  H01L21/76232 ,  H01L21/76281 ,  H01L21/76283

    Abstract: Photonic devices are created by laterally growing a semiconductor material (i.e., a localized semiconductor-on-insulator layer) over a localized buried oxide (BOX) created in a semiconductor by either a trench isolation process or thermal oxidation. In one embodiment, and after trench formation in a semiconductor substrate, the trench is filled with oxide to create a localized BOX. The top surface of the BOX is recessed to depth below the topmost surface of the semiconductor substrate to expose sidewall surfaces of the semiconductor substrate within each trench. A semiconductor material is then epitaxially grown from the exposed sidewall surfaces of the semiconductor substrate.

    Abstract translation: 通过在半导体中通过沟槽隔离工艺或热氧化产生的局部掩埋氧化物（BOX）横向生长半导体材料（即，局部绝缘体上半导体层）来产生光子器件。 在一个实施例中，并且在半导体衬底中形成沟槽之后，沟槽填充有氧化物以产生局部BOX。 BOX的顶表面凹进到半导体衬底的最上表面的深度以暴露在每个沟槽内的半导体衬底的侧壁表面。 然后从半导体衬底的暴露的侧壁表面外延生长半导体材料。

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