公开(公告)号：US20090045393A1

公开(公告)日：2009-02-19

申请号：US11920092

申请日：2006-05-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/0079 ,  H01S5/0211 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/32341

摘要： There are provided a nitride semiconductor device having a structure capable of improving crystallinity of grown nitride semiconductor, carrying out easily removing a substrate, and dividing into chips very easily, by using zinc oxide based compound having excellent processability as a substrate, and a method for manufacturing the same. In case that a nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate (1), the substrate (1) is made of MgxZn1-xO (0

摘要翻译： 提供了一种具有能够改善生长的氮化物半导体的结晶度的结构的氮化物半导体器件，通过使用具有优异的加工性的氧化锌基化合物作为基底，能够容易地除去衬底并且非常容易地分成芯片，以及用于 制造相同。 在氮化物半导体器件通过在衬底（1）上层叠氮化物半导体层而形成氮化物半导体器件的情况下，衬底（1）由Mg x Zn 1-x O（0

公开(公告)号：US20090026468A1

公开(公告)日：2009-01-29

申请号：US12224524

申请日：2007-02-22

申请人： Mitsuhiko Sakai ,  Tadahiro Okazaki ,  Ken Nakahara

发明人： Mitsuhiko Sakai ,  Tadahiro Okazaki ,  Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n. t ≥ ρ   J 0  e 4  γκ B  T · W  ( L - W ) Formula   1 where L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, γ is diode ideality factor, κB is Boltzmann constant, ρ is specific resistance of the n-type semiconductor layer.

公开(公告)号：US06987029B2

公开(公告)日：2006-01-17

申请号：US10713205

申请日：2003-11-17

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US06735230B1

公开(公告)日：2004-05-11

申请号：US09786337

申请日：2001-03-08

申请人： Tetsuhiro Tanabe ,  Ken Nakahara

发明人： Tetsuhiro Tanabe ,  Ken Nakahara

IPC分类号： H01S319

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/32308 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： On the surface of a conductive substrate (1) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion (11) that has at least an n-type layer (4) and a p-type layer (6) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer (2) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.

摘要翻译： 在GaAs，Ge，Si等的导电性基板（1）的表面上，具有至少具有n型层（4）和p型层的发光层形成部（11）的半导体层叠部 通过由III族元素的化合物半导体制成的并且层叠以形成发光层的层型（6）通过适合于该基板的缓冲层（2）形成。 结果，使用具有允许电极从芯片的上表面和下表面中取出的电极的垂直型III族氮化物化合物半导体的半导体发光器件具有优异的晶体性质，具有高发光 效率，并显示出裂解。 因此，可以容易地将LD芯片安装在具有良好导热性的子座上，从而防止由于热导致的发光效率（微分量子效率）的降低和劣化。

公开(公告)号：US06649434B2

公开(公告)日：2003-11-18

申请号：US09950831

申请日：2001-09-13

申请人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2120

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high temperature of 500° C. or more, and supply of oxygen is stopped and gradual cooling is carried out until a substrate temperature is lowered to 350° C. or less after the growth of the ZnO based oxide semiconductor layer is completed. As a result, it is possible to suppress the generation of dislocations or crystal defects over an epitaxial grown layer based on the atmosphere while the substrate temperature is lowered after the growth of the semiconductor layer and a difference in a coefficient of thermal expansion, thereby obtaining a semiconductor device having a high quality ZnO based oxide semiconductor layer which has an excellent crystalline property and a semiconductor light emitting device having the high characteristics.

公开(公告)号：US06638846B2

公开(公告)日：2003-10-28

申请号：US09950830

申请日：2001-09-13

申请人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2144

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B29/16

摘要： A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.

公开(公告)号：US08795184B2

公开(公告)日：2014-08-05

申请号：US13179814

申请日：2011-07-11

申请人： Daisuke Niwa ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Masahide Tanaka ,  Ken Nakahara

发明人： Daisuke Niwa ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Masahide Tanaka ,  Ken Nakahara

IPC分类号： A61B5/02 ,  A61B5/024 ,  A61B5/1455 ,  A61B5/16 ,  A61B5/00

CPC分类号： A61B5/002 ,  A61B5/0022 ,  A61B5/02416 ,  A61B5/14551 ,  A61B5/164 ,  A61B5/165 ,  A61B5/4815 ,  A61B5/6802 ,  A61B5/6826 ,  A61B2503/10 ,  A61B2503/12 ,  A61B2503/40 ,  A61B2505/07

摘要： A wireless plethysmogram sensor unit is capable of obtaining a plethysmogram from a living tissue of a measuring object and of transmitting the plethysmogram to a processing unit outside the wireless plethysmogram sensor unit. The sensor unit includes a light source to emit measuring light into the living tissue and a light receiving element to receive light emerging from the tissue, which is accompanied by pulsation caused by absorption by arteries in the tissue. A memory stores a plethysmogram obtained in accordance with the light received by the light receiving element. A short range wireless communicator transmits the plethysmogram to the processing unit. A power source provides power to other elements in the sensor unit, and a controller controls the elements of the sensor unit.

摘要翻译： 无线体积描记传感器单元能够从测量对象的生物体组织获取体积图，并将体积图传送到无线体积描记传感器单元外部的处理单元。 传感器单元包括用于将测量光发射到生物体组织中的光源和用于接收从组织出射的光的光接收元件，其伴随着由组织中的动脉的吸收引起的脉动。 存储器存储根据由光接收元件接收的光获得的体积图。 短距离无线通信器将体积图传送到处理单元。 电源为传感器单元中的其他元件提供电力，并且控制器控制传感器单元的元件。

公开(公告)号：US08304795B2

公开(公告)日：2012-11-06

申请号：US12087173

申请日：2006-12-28

申请人： Atsushi Yamaguchi ,  Ken Nakahara

发明人： Atsushi Yamaguchi ,  Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0083

摘要： A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion. Light emitted from the light emitting layer is therefore totally reflected repeatedly in the semiconductor lamination portion and the substrate and can be effectively taken out without attenuation, so external quantum efficiency can be improved.

摘要翻译： 通过在衬底（1）的一侧层叠包括n型层（3）和p型层（5）的氮化物半导体层以形成发光层，形成半导体层叠部（6） 并且在半导体层叠部的表面侧设置有透光性导电层（7）。 在透光导电层的表面上设置凹凸图案，即凹部（7a）。 p侧电极（8）设置在透光导电层上，n侧电极（9）与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。 因此，从半导体层叠部和基板反射全反射从发光层发出的光，能够有效地取出而不衰减，能够提高外部的量子效率。

公开(公告)号：US08053756B2

公开(公告)日：2011-11-08

申请号：US12227694

申请日：2006-05-26

申请人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

发明人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/06

摘要： Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, a first undoped InGaN layer 7, a second undoped InGaN layer 8, and a p-type Gan-based contact layer 9 are stacked on a sapphire substrate 1. A p-electrode 10 is formed on the p-type Gan-based contact layer 9. An n-electrode 11 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The first undoped InGaN layer 7 is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer 8 is formed thereon. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the first and second undoped InGaN layers 20 nm or less.

摘要翻译： 提供了从与现有技术完全不同的观点，通过简单的手段，具有从p型氮化物半导体层到活性层的载流子注入效率提高的氮化物半导体发光元件。 缓冲层2，未掺杂的GaN层3，n型GaN接触层4，InGaN / GaN超晶格层5，有源层6，第一未掺杂的InGaN层7，第二未掺杂的InGaN层8和p 型的Gan型接触层9层叠在蓝宝石基板1上。在p型Gan型接触层9上形成p电极10.在n型电极11的表面上形成n电极11， 作为台面蚀刻的结果，GaN接触层4被暴露。 第一未掺杂的InGaN层7形成为与具有量子阱结构的有源层中最靠近p侧的阱层接触，随后在其上形成第二未掺杂的InGaN层8。 通过使第一和第二未掺杂的InGaN层的总膜厚度达到20nm以下，能够提高进入有源层6的载流子注入效率。

公开(公告)号：US08049235B2

公开(公告)日：2011-11-01

申请号：US12223172

申请日：2007-01-23

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/10 ,  H01L27/15

CPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44

摘要： Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer 2 and a p side Bragg reflection layer 4 are formed so as to sandwich an MQW active layer 3 that serves as a light emitting region, and the nitride semiconductor light emitting element has a double hetero structure. On top of the n side anti-reflection layer 2, an n electrode 1 is formed. Meanwhile, at the lower side of the p side Bragg reflection layer 4, a p electrode 5, a reflection film 7, and a pad electrode 8 are formed, and the pad electrode is bonded to a support substrate 10 with a conductive bonding layer 9 interposed in between. Both the n side anti-reflection layer 2 and the p side Bragg reflection layer 4 also serve as contact layers. The n side anti-reflection layer 2 is disposed on the light-extracting-direction side while the p side Bragg reflection layer 4 is disposed on the opposite side to the light-extracting-direction side. Consequently, the light extraction efficiency is improved.

摘要翻译： 提供了与用于电极的金属的反射率无关的具有提高的光提取效率和出射光的宽的照射角的氮化物半导体发光元件。 形成n侧防反射层2和p侧布拉格反射层4，以夹持用作发光区域的MQW有源层3，并且氮化物半导体发光元件具有双异质结构。 在n侧防反射层2的顶部，形成n电极1。 同时，在p侧布拉格反射层4的下侧形成有p电极5，反射膜7和焊盘电极8，并且将焊盘电极与导电接合层9插入的支撑基板10接合 之间。 n侧防反射层2和p侧布拉格反射层4也用作接触层。 n侧防反射层2设置在取光方向侧，而p侧布拉格反射层4设置在与光提取方向相反的一侧。 因此，光提取效率提高。