公开(公告)号：US06649434B2

公开(公告)日：2003-11-18

申请号：US09950831

申请日：2001-09-13

申请人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2120

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high temperature of 500° C. or more, and supply of oxygen is stopped and gradual cooling is carried out until a substrate temperature is lowered to 350° C. or less after the growth of the ZnO based oxide semiconductor layer is completed. As a result, it is possible to suppress the generation of dislocations or crystal defects over an epitaxial grown layer based on the atmosphere while the substrate temperature is lowered after the growth of the semiconductor layer and a difference in a coefficient of thermal expansion, thereby obtaining a semiconductor device having a high quality ZnO based oxide semiconductor layer which has an excellent crystalline property and a semiconductor light emitting device having the high characteristics.

公开(公告)号：US06638846B2

公开(公告)日：2003-10-28

申请号：US09950830

申请日：2001-09-13

申请人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2144

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B29/16

摘要： A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.

公开(公告)号：US08946727B2

公开(公告)日：2015-02-03

申请号：US11886852

申请日：2006-03-23

申请人： Ken Nakahara ,  Kentaro Tamura

发明人： Ken Nakahara ,  Kentaro Tamura

IPC分类号： H01L27/15 ,  H01L29/221 ,  H01L29/04 ,  H01L29/225 ,  H01L29/778 ,  H01L21/02 ,  H01L33/16 ,  H01L33/28 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223

CPC分类号： H01L29/221 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/225 ,  H01L29/7787 ,  H01L33/16 ,  H01L33/28 ,  H01S5/0422 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/327

摘要： There is provided a zinc oxide based compound semiconductor device in which drive voltage is not raised, property of crystal is satisfactory and device characteristics is excellent, even when the semiconductor device is formed by forming a lamination portion having a hetero junction of the ZnO based compound semiconductor layers. The zinc oxide based compound semiconductor device includes a substrate (1) made of MgxZn1-xO (0≦x≦0.5), the principal plane of which is a plane A (11-20) or a plane M (10-10), and single crystal layers (2) to (6) made of zinc oxide based compound semiconductor, which are epitaxially grown on the principal plane of the substrate (1) in such orientation that a plane parallel to the principal plane is a plane {11-20} or a plane {10-10} and a plane perpendicular to the principal plane is a plane {0001}.

摘要翻译： 提供了一种氧化锌基化合物半导体器件，其中驱动电压不升高，晶体性能令人满意并且器件特性优异，即使通过形成具有ZnO基化合物的异质结的层叠部分形成半导体器件， 半导体层。 氧化锌类化合物半导体器件包括由主要平面A（11-20）或平面M（10-10）构成的由Mg x Zn 1-x O（0＆nlE; x＆nlE; 0.5）构成的衬底（1） 以及由氧化锌类化合物半导体制成的单晶层（2）〜（6），其以基板（1）的主面外延生长，使得平行于主面的平面为{ 20}或平面{10-10}，垂直于主平面的平面为{0001}平面。

公开(公告)号：US08610133B2

公开(公告)日：2013-12-17

申请号：US13274289

申请日：2011-10-14

申请人： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

发明人： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

IPC分类号： H01L21/02

CPC分类号： G02B5/208 ,  G01J1/1626 ,  G01J1/429 ,  G02B5/285

摘要： Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

摘要翻译： 在支撑基板上形成两个光接收元件。 第一光接收元件由p型层，n型层，光吸收半导体层，阳极电极，阴极电极，保护膜等形成。第二光接收元件由p 型层，n型层，透射膜，阳极电极，阴极电极，保护膜等。光吸收半导体层吸收波长λ范围内的光，并且设置得比光接收表面更靠近光接收表面 pn结区域。 透射膜没有光吸收范围，并且比pn结区域更靠近光接收表面。 通过使用来自第一光接收元件的检测信号和来自第二光接收元件的检测信号的计算来测量波长范围λ的光量。

公开(公告)号：US08154036B2

公开(公告)日：2012-04-10

申请号：US12223784

申请日：2007-02-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/0079 ,  H01L33/32

摘要： A nitride semiconductor device according to the present invention sequentially includes at least an n-electrode, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer includes: an n-type GaN contact layer including n-type impurity-doped GaN having an electron concentration ranging from 5×1016 cm−3 to 5×1018 cm−3; the n-electrode provided on one of a main surface of the n-type GaN contact layer; and a generating layer provided on other main surface of the n-type GaN contact layer, including at least any one of AlxGa1-xN (0

摘要翻译： 根据本发明的氮化物半导体器件至少依次包括n电极，n型半导体层，有源层和p型半导体层。 n型半导体层包括：n型GaN接触层，其包含具有5×10 16 cm -3至5×10 18 cm -3的电子浓度的n型杂质掺杂的GaN; n电极，设置在n型GaN接触层的主表面之一上; 和包含Al x Ga 1-x N（0

公开(公告)号：US08004006B2

公开(公告)日：2011-08-23

申请号：US12084634

申请日：2006-11-07

申请人： Ken Nakahara ,  Atsushi Yamaguchi

发明人： Ken Nakahara ,  Atsushi Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/44

摘要： Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.

摘要翻译： 提供一种氮化物半导体发光元件，即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽，也不会对发光区域造成损害并具有高亮度而不劣化 通过蚀刻形成芯片分离和激光剥离; 及其制造方法。 当从p侧观察时，n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。 直到该步骤A的位置，保护绝缘膜6覆盖n型氮化物半导体层2，有源层3，p型氮化物半导体层4，p型电极5的一侧以及部分 使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时，当用于 通过蚀刻形成芯片分离或激光剥离。

公开(公告)号：US20110180688A1

公开(公告)日：2011-07-28

申请号：US13010289

申请日：2011-01-20

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0296

CPC分类号： H01L31/107 ,  H01L21/02425 ,  H01L21/02568 ,  H01L21/02631 ,  H01L27/14621 ,  H01L27/14647 ,  H01L27/14696 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/1832 ,  Y02E10/541

摘要： A photoelectric converter includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high-resistivity layer in its surface; a transparent electrode layer disposed on the compound semiconductor thin film; an interlayer insulating layer; a zinc-oxide-based compound semiconductor thin film; and electrodes. With application of a reverse bias voltage between the transparent electrode layer and the lower electrode layer, and application of a bias voltage between the electrodes, the photoelectric converter photoelectrically converts ultraviolet region light. Thus, the photoelectric converter achieves photoelectric conversion of light in a wider region. Such a photoelectric converter and a process for producing the same, and a solid state imaging device to which the photoelectric converter is applied are provided.

摘要翻译： 光电转换器包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并在其表面具有高电阻率层; 设置在化合物半导体薄膜上的透明电极层; 层间绝缘层; 氧化锌类化合物半导体薄膜; 和电极。 通过在透明电极层和下部电极层之间施加反向偏置电压，并且在电极之间施加偏置电压，光电转换器对紫外线区域进行光电转换。 因此，光电转换器实现在较宽区域的光的光电转换。 提供这种光电转换器及其制造方法，以及应用了光电转换器的固态成像装置。

公开(公告)号：US07781791B2

公开(公告)日：2010-08-24

申请号：US12224524

申请日：2007-02-22

申请人： Mitsuhiko Sakai ,  Tadahiro Okazaki ,  Ken Nakahara

发明人： Mitsuhiko Sakai ,  Tadahiro Okazaki ,  Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n. t ≥ ρ ⁢ ⁢ J 0 ⁢ e 4 ⁢ γκ B ⁢ T · W ⁡ ( L - W ) Formula ⁢ ⁢ 1 where L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, γ is diode ideality factor, κB is Boltzmann constant, ρ is specific resistance of the n-type semiconductor layer.

摘要翻译： 在半导体发光元件中，依次层叠基板上的p型层（220），有源层（230）和n型层（240）。 n型层（240）形成有一个方向的宽度与n型层（240）的宽度相等的矩形n侧电极（241）。 n型层（240）的厚度t满足下式1。 半导体发光元件包括在层叠方向上延伸并形成有多个突起（271）的侧表面（270）。 假设来自有源层（230）的光的波长为λ，并且n型层（240）或p型层（220）的折射率为n，底部宽度的平均WA 的投影设定为满足WA≥λ/ n。 t≥＆rgr; ≠J 0 e4γ＆kgr; B T·W⁡（L-W）公式1其中L是与一个方向不同的方向的n型层的宽度，T是绝对温度，W是n侧电极的宽度 方向不同于一个方向，J0是n侧电极和n型层之间的接触部分处的电流密度，e是基本电荷，γ是二极管理想因子，kgr; B是玻尔兹曼常数，＆rgr; 是n型半导体层的电阻率。

公开(公告)号：US20090267048A1

公开(公告)日：2009-10-29

申请号：US11916868

申请日：2006-03-03

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0083

摘要： Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is nzλ, and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is θz, a periodic interval Lz between adjacent concave portions is set in a range of λ/nzλ≦Lz≦λ/(nzλX(1−sin θz)).

摘要翻译： 提高了半导体发光元件的光提取效率。 在半导体发光元件的蓝宝石衬底上层叠缓冲层，n型GaN层，InGaN发射层和p型GaN层。 在p型GaN层上设置有作为透明电极的ZnO层，在ZnO层的表面上以二维周期的间隔形成凹部。 如果来自空气中的InGaN发射层的光的波长为λ，则波长λ处的ZnO层的折射率为nzλ，ZnO层与其接触的介质之间的界面处的全反射角为 相邻凹部之间的周期性间隔Lz被设定在λ/nzλ= Lz <=λ/（nzlambdaX（1-sinthetaz））的范围内。

公开(公告)号：US20090175306A1

公开(公告)日：2009-07-09

申请号：US11990260

申请日：2006-08-09

申请人： Ken Nakahara ,  Tsutomu Ishikawa

发明人： Ken Nakahara ,  Tsutomu Ishikawa

IPC分类号： H01S5/22

CPC分类号： H01S5/34326 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02461 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213

摘要： Provided is a high-power red semiconductor laser having a laser element in which a temperature rise is suppressed with improved heat dissipation characteristics thereof, and which accordingly needs not be enlarged in heat dissipation area. An n-AlGaInP cladding layer, an AlGaInP optical guide layer, an MQW active layer, an AlGaInP optical guide layer, a p-AlGaInP first cladding layer, an AlGaInP etching stop layer, an n-AlGaInP block layer, a p-AlGaAs second cladding layer, a p-GaAs contact layer and a p-electrode are stacked on the top surface of a tilted n-GaAs substrate. An n-electrode is formed on the back surface of the n-GaAs substrate. The heat dissipation characteristics of the laser element are improved, because the second cladding layer contains AlGaAs, which has a higher heat conductivity.

摘要翻译： 提供一种具有激光元件的高功率红色半导体激光器，其中通过改善其散热特性来抑制温度升高，并且因此不需要在散热面积上扩大。 n-AlGaInP包层，AlGaInP光导层，MQW有源层，AlGaInP光导层，p-AlGaInP第一包层，AlGaInP蚀刻停止层，n-AlGaInP阻挡层，p-AlGaAs第二 覆盖层，p-GaAs接触层和p电极堆叠在倾斜的n-GaAs衬底的顶表面上。 在n-GaAs衬底的背面上形成n电极。 由于第二包层具有较高的导热率的AlGaAs，因此能够提高激光元件的散热特性。