公开(公告)号：US20180248079A1

公开(公告)日：2018-08-30

申请号：US15961473

申请日：2018-04-24

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/36 ,  H01L33/06

CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/36 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

公开(公告)号：US09985183B2

公开(公告)日：2018-05-29

申请号：US15262956

申请日：2016-09-12

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L29/18 ,  H01L33/38 ,  H01L33/36 ,  H01L33/00 ,  H01L33/06 ,  H01L33/40 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/36 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

公开(公告)号：US20170324014A1

公开(公告)日：2017-11-09

申请号：US15658202

申请日：2017-07-24

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/04 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/64 ,  H01L21/78 ,  H01L33/38 ,  H01L33/40 ,  H01L33/58

CPC classification number: H01L33/62 ,  H01L21/78 ,  H01L25/0753 ,  H01L27/04 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/58 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

公开(公告)号：US20170288110A1

公开(公告)日：2017-10-05

申请号：US15623664

申请日：2017-06-15

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L33/62 ,  H01L33/32 ,  H01L31/02 ,  H01L33/00 ,  H01L31/0304 ,  H01L33/38 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/153 ,  H01L31/02005 ,  H01L31/03044 ,  H01L31/03048 ,  H01L33/0012 ,  H01L33/32 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

公开(公告)号：US20170250313A1

公开(公告)日：2017-08-31

申请号：US15594392

申请日：2017-05-12

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Lifang Xu

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/56 ,  H01L33/42 ,  H01L33/40 ,  H01L33/50 ,  H01L33/06 ,  H01L33/30

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

公开(公告)号：US09691955B2

公开(公告)日：2017-06-27

申请号：US14046719

申请日：2013-10-04

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/10 ,  H01L33/42 ,  H01L33/40 ,  H01L33/44 ,  H01L33/60 ,  H01L33/46 ,  H01L33/36 ,  H01L51/52

CPC classification number: H01L33/62 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L51/5212 ,  H01L2251/5361 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

公开(公告)号：US20170005233A1

公开(公告)日：2017-01-05

申请号：US15269302

申请日：2016-09-19

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/40 ,  H01L33/58 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/502 ,  H01L33/58 ,  H01L2933/0016

Abstract: Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device.

Abstract translation: 公开了用于提高固态传感器（SST）的发光效率的系统和方法，例如发光二极管（LED）。 根据该技术的SST管芯的一个实施例包括设置在管芯前侧上的电连接器上的反射材料。 反射材料具有比连接器的基底材料更高的反射率，使得朝向连接器传播的光线反射回设备。

公开(公告)号：US20160380156A1

公开(公告)日：2016-12-29

申请号：US15262956

申请日：2016-09-12

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/06 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/36 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

公开(公告)号：US20160316528A1

公开(公告)日：2016-10-27

申请号：US15137596

申请日：2016-04-25

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H05B33/08 ,  H01L33/00

CPC classification number: H05B33/0809 ,  H01L27/153 ,  H01L29/73 ,  H01L33/0025 ,  H01L33/32 ,  H05B33/0827

Abstract: Multi junction solid-state transducer (SST) devices and associated systems and methods are disclosed herein. In several embodiments, for example, an SST system can include a first multi-junction SST chain having a first drive voltage, a first P-contact, and a first N-contact, and a second multi junction SST chain having a second drive voltage, a second P-contact, and a second N-contact. The first and second multi junction SST chains can be configured to be activated independently of each other. The SST system can further include a driver operably coupled to the first and second P- and N-contacts. The driver can be configured to activate the first multi junction SST chain when voltage input is at least equal to the first drive voltage. When absolute voltage increases a predetermined voltage level, the driver can be configured to activate the second multi-junction SST chain or the first and second multi junction SST chains.

Abstract translation: 本文公开了多结固态换能器（SST）装置及相关系统和方法。 在几个实施例中，例如，SST系统可以包括具有第一驱动电压的第一多结SST链，第一P接触和第一N接触，以及具有第二驱动电压的第二多结SST链 ，第二P接触和第二N接触。 第一和第二多结SST链可被配置成独立于彼此激活。 SST系统还可以包括可操作地耦合到第一和第二P-和N-触点的驱动器。 当电压输入至少等于第一个驱动电压时，驱动器可以配置为激活第一个多结SST链。 当绝对电压增加预定电压电平时，驱动器可被配置为激活第二多结SST链或第一和第二多结SST链。

公开(公告)号：US09326338B2

公开(公告)日：2016-04-26

申请号：US13923647

申请日：2013-06-21

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L21/24 ,  H05B33/08 ,  H01L29/73 ,  H01L27/15

CPC classification number: H05B33/0809 ,  H01L27/153 ,  H01L29/73 ,  H01L33/0025 ,  H01L33/32 ,  H05B33/0827

Abstract: Multi-junction solid-state transducer (SST) devices and associated systems and methods are disclosed herein. In several embodiments, for example, an SST system can include a first multi-junction SST chain having a first drive voltage, a first P-contact, and a first N-contact, and a second multi-junction SST chain having a second drive voltage, a second P-contact, and a second N-contact. The first and second multi-junction SST chains can be configured to be activated independently of each other. The SST system can further include a driver operably coupled to the first and second P- and N-contacts. The driver can be configured to activate the first multi-junction SST chain when voltage input is at least equal to the first drive voltage. When absolute voltage increases a predetermined voltage level, the driver can be configured to activate the second multi-junction SST chain or the first and second multi-junction SST chains.

Abstract translation: 本文公开了多结固态换能器（SST）装置及相关系统和方法。 在几个实施例中，例如，SST系统可以包括具有第一驱动电压的第一多结SST链，第一P接触和第一N接触，以及具有第二驱动的第二多结SST链 电压，第二P接触和第二N接触。 第一和第二多结SST链可被配置为独立地彼此激活。 SST系统还可以包括可操作地耦合到第一和第二P-和N-触点的驱动器。 当电压输入至少等于第一个驱动电压时，驱动器可以配置为激活第一个多结SST链。 当绝对电压增加预定电压电平时，驱动器可被配置为激活第二多结SST链或第一和第二多结SST链。