公开(公告)号：US20090168825A1

公开(公告)日：2009-07-02

申请号：US12333972

申请日：2008-12-12

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01S5/026 ,  H01L21/02

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 发光元件组件包括具有第一表面，面向第一表面的第二表面，凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板， 发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US20070278475A1

公开(公告)日：2007-12-06

申请号：US11802460

申请日：2007-05-23

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Yuji Masui ,  Norihiko Yamaguchi

IPC分类号： H01L29/06

CPC分类号： H01S5/0264 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/18311 ,  H01S2301/18

摘要： A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.

摘要翻译： 半导体发光器件包括：依次包括第一导电类型半导体层，包括发光区域的有源层和第二导电类型半导体层的半导体发光元件; 具有透射特性的滤光器，其中在与所述半导体发光元件输出的光的感应发光的光轴平行的方向上的透射率高于在与所述光轴不同的方向上的透射率的透射率; 以及包含光吸收层的半导体光电检测器，所述光吸收层吸收通过所述滤光器的光的一部分，其中所述滤光器和所述半导体光电检测器依次层叠在所述半导体发光元件的第二导电类型半导体层上， 并且以半导体发光元件形成为一个单元。

公开(公告)号：US08514905B2

公开(公告)日：2013-08-20

申请号：US12805876

申请日：2010-08-23

申请人： Yuji Masui ,  Rintaro Koda ,  Tomoyuki Oki ,  Takahiro Arakida ,  Naoki Jogan ,  Yoshinori Yamauchi

发明人： Yuji Masui ,  Rintaro Koda ,  Tomoyuki Oki ,  Takahiro Arakida ,  Naoki Jogan ,  Yoshinori Yamauchi

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/1833 ,  H01S5/18358 ,  H01S2301/173

摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.

摘要翻译： 提供了能够防止电流变窄层分离的激光二极管。 激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入到有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层 目前变窄层。 通过氧化含有Al的第一氧化层形成电流变窄层。 通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。 缓冲层的厚度为10nm以上。

公开(公告)号：US20120175670A1

公开(公告)日：2012-07-12

申请号：US13424799

申请日：2012-03-20

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Tomoyuki Oki

IPC分类号： H01L33/62

CPC分类号： H01S5/18311 ,  H01L33/145 ,  H01S5/18338

摘要： A method for manufacturing a light emitting element including the steps of (A) sequentially forming on a substrate a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type; (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region; and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.

摘要翻译： 一种制造发光元件的方法，包括以下步骤：（A）在基板上依次形成具有第一导电类型的第一化合物半导体层，有源层和具有第二导电类型的第二化合物半导体层; （B）在位于设置有电流限制区域的区域外的所述第二化合物半导体层的至少一部分的区域中在厚度方向上形成多个点状孔部; 以及（C）通过使所述第二化合物半导体层的一部分从所述孔部分的侧壁进行绝缘处理来形成绝缘区域，以便产生由所述第二化合物半导体层中的绝缘区域包围的电流限制区域。

公开(公告)号：US20120034720A1

公开(公告)日：2012-02-09

申请号：US13317165

申请日：2011-10-12

申请人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

发明人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

IPC分类号： H01L33/60

CPC分类号： H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

公开(公告)号：US08102890B2

公开(公告)日：2012-01-24

申请号：US13064337

申请日：2011-03-21

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/00 ,  H01S3/091 ,  H01S3/094

CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

摘要翻译： 半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。 空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电型第一接触层，第一导电类型的第一接触层 导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。 第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。

公开(公告)号：US08040934B2

公开(公告)日：2011-10-18

申请号：US12656166

申请日：2010-01-20

申请人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

IPC分类号： H01S5/00 ,  H01S3/00

CPC分类号： H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

摘要翻译： 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。

公开(公告)号：US20110103420A1

公开(公告)日：2011-05-05

申请号：US12923637

申请日：2010-09-30

申请人： Rintaro Koda ,  Yusuke Nakayama

发明人： Rintaro Koda ,  Yusuke Nakayama

IPC分类号： H01S5/323

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0208 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423

摘要： A laser diode with which high density crystal defect and surface roughness are able to be inhibited from being generated is provided. The laser diode includes a laminated body including an active layer and a current narrowing layer on a substrate. The substrate is an inclined substrate having an off-angle larger than 0 degrees in the direction of [1-100] from (0001) C plane.

摘要翻译： 提供了能够抑制高密度晶体缺陷和表面粗糙度的激光二极管的产生。 激光二极管包括在基板上包括有源层和电流变窄层的层叠体。 衬底是从（0001）C平面沿[1-100]方向偏离角度大于0度的倾斜衬底。

公开(公告)号：US20100202486A1

公开(公告)日：2010-08-12

申请号：US12656166

申请日：2010-01-20

申请人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

IPC分类号： H01S5/026 ,  H01L33/48

CPC分类号： H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

摘要： A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

摘要翻译： 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。

公开(公告)号：US20090285253A1

公开(公告)日：2009-11-19

申请号：US12385811

申请日：2009-04-21

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

摘要翻译： 半导体发光器件包括第一导电型第一多层膜反射镜和第二导电型第二多层膜反射镜; 空腔层; 以及第一导电部分，第二导电部分和第三导电部分。 空腔层具有包括第一导电型或未掺杂的第一包层，未掺杂的第一有源层，第二导电型或未掺杂的第二包覆层，第二导电型第一接触层，第一导电类型的第一接触层 导电型第二接触层，第一导电型或未掺杂第三包层，未掺杂的第二有源层和第二导电型或未掺杂的第四包覆层。 第一导电部电连接到第一多层膜反射镜，第二导电部与第二多层膜反射镜电连接，第三导电部与第一接触层和第二接触层电连接。