公开(公告)号：US20160233125A1

公开(公告)日：2016-08-11

申请号：US15018465

申请日：2016-02-08

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/324

Abstract: A method for transferring a useful layer onto a carrier comprises formation of an embrittlement plane by implantation of light species into a first substrate in such a manner as to define the bounds of a useful layer between this plane and a surface of the first substrate, mounting of the carrier onto the surface of the first substrate so as to form an assembly to be fractured, and thermal fracture treatment of the first substrate along the embrittlement plane in such a manner as to transfer the useful layer onto the support. During the thermal fracture treatment, the degree of peripheral adhesion is reduced at the interface between the carrier and the first substrate.

Abstract translation: 用于将有用层转移到载体上的方法包括通过将光物质注入到第一基底中以限定在该平面和第一基底的表面之间的有用层的界限的方式形成脆化平面，安装 的载体形成在第一基板的表面上，以形成要断裂的组件，以及沿着脆化面热处理第一基板，以将有用层转移到载体上。 在热断裂处理期间，在载体和第一基板之间的界面处，周边粘合度降低。

公开(公告)号：US20160189965A1

公开(公告)日：2016-06-30

申请号：US14909969

申请日：2014-08-05

Applicant: SOITEC

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/268 ,  H01L29/20 ,  H01L21/78

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/06875 ,  H01L33/0079

Abstract: A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (IE) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

Abstract translation: 一种通过属于光谱范围的电磁照射（EI）将结构与基板分离的方法包括以下步骤：a）提供基底，b）在基底上形成吸收分离层，c）形成待分离的结构 分离层，d）经由衬底使分离层暴露于电磁照射（IE），使得分离层在吸收引起的热的作用下分解，该方法值得注意的是它包括步骤b1） 在分离层上形成透明热障层，曝光期和热障层的厚度适于使得待分离结构的温度在曝光期间保持在阈值以下，超过该阈值，故障为 可能出现在结构中。

公开(公告)号：US20160005613A1

公开(公告)日：2016-01-07

申请号：US14770378

申请日：2014-02-25

Applicant: Soitec

Inventor： Oleg Kononchuk

IPC: H01L21/3065 ,  H01L21/268

CPC classification number: H01L21/3065 ,  B23K26/126 ,  H01L21/02488 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/302 ,  H05K3/0026

Abstract: The disclosure relates to a process for treating a structure, the structure comprising, from its back side to its front side, a carrier substrate, an insulating layer and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species, the chemical species being capable of reacting chemically with the useful layer. This treatment process is noteworthy in that the useful layer is heated by a pulsed laser beam, the beam sweeping the free surface, the wavelength of the beam differing by, at most, plus or minus 15 nm from a central wavelength, the central wavelength being chosen so that the sensitivity of the reflectivity of the structure relative to the insulating layer is zero.

Abstract translation: 本公开涉及一种用于处理结构的方法，该结构从其背侧至其前侧包括载体基底，绝缘层和有用层，该有用层具有自由表面，该结构被放置在 含有化学物质的气氛，化学物质能够与有用层化学反应。 该处理过程值得注意的是，有用层被脉冲激光束加热，光束扫掠自由表面，波束的波长与中心波长相差至多为15nm，中心波长为 使得结构相对于绝缘层的反射率的灵敏度为零。

公开(公告)号：US20150303098A1

公开(公告)日：2015-10-22

申请号：US14686229

申请日：2015-04-14

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract translation: 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

公开(公告)号：US20140374886A1

公开(公告)日：2014-12-25

申请号：US14369594

申请日：2012-12-21

Applicant: Soitec

Inventor： Oleg Kononchuk

IPC: H01L21/762 ,  H01L21/683 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L21/265 ,  H01L21/6836

Abstract: The invention relates to a method for fabricating a substrate, comprising the steps of providing a donor substrate with at least one free surface, performing an ion implantation at a predetermined depth of the donor substrate to form an in-depth predetermined splitting area inside the donor substrate, and is characterized in providing a layer of an adhesive, in particular an adhesive paste, over the at least one free surface of the donor substrate. The invention further relates to a semiconductor structure comprising a semiconductor layer, and a layer of a ceramic-based and/or a graphite-based and/or a metal-based adhesive provided on one main side of the semiconductor layer.

Abstract translation: 本发明涉及一种用于制造衬底的方法，包括以下步骤：向供体衬底提供至少一个自由表面，在供体衬底的预定深度处进行离子注入，以在供体内形成深入的预定分裂区域 衬底，并且其特征在于在施主衬底的至少一个自由表面上提供粘合剂层，特别是粘合剂糊剂层。 本发明还涉及一种半导体结构，其包括半导体层，以及设置在半导体层的一个主侧上的基于陶瓷的和/或基于石墨的和/或金属基粘合剂层。

公开(公告)号：US11711065B2

公开(公告)日：2023-07-25

申请号：US17141065

申请日：2021-01-04

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: A61B5/1459 ,  A61B5/00 ,  A61B5/145 ,  H03H9/02 ,  H03H3/02 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H10N30/085

CPC classification number: H03H9/02834 ,  A61B5/1459 ,  A61B5/14546 ,  A61B5/685 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/02574 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/6489 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  A61B2562/0204 ,  H03H2003/0407 ,  H10N30/085

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US11670540B2

公开(公告)日：2023-06-06

申请号：US17190004

申请日：2021-03-02

Applicant: Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

CPC classification number: H01L21/76254 ,  H01L21/263 ,  H01L21/324 ,  H01L21/76251

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US20220319910A1

公开(公告)日：2022-10-06

申请号：US17597583

申请日：2020-07-13

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  Soitec

Inventor： Vincent Larrey ,  François Rieutord ,  Jean-Michel Hartmann ,  Frank Fournel ,  Didier Landru ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L21/762 ,  H01L21/02

Abstract: A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and —applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

公开(公告)号：US20220181173A1

公开(公告)日：2022-06-09

申请号：US17435899

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US20220157882A1

公开(公告)日：2022-05-19

申请号：US17649982

申请日：2022-02-04

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot ,  Christelle Michau

IPC: H01L27/146 ,  H01L21/762

Abstract: A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.