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公开(公告)号:US10923625B2
公开(公告)日:2021-02-16
申请号:US16196098
申请日:2018-11-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byunghoon Na , Jangwoo You , Seunghoon Han
Abstract: Provided is a light source device including a substrate, a first light emitting element disposed on the substrate and including a first reflective layer, a second light emitting layer configured to emit light of a second wavelength, a first etch stop layer, a first light emitting layer configured to emit light of a first wavelength different from the second wavelength, and a first nanostructure reflective layer, and a second light emitting element disposed on the substrate, spaced apart from the first light emitting element, and comprising a second reflective layer having same material and thickness as the first reflective layer, a third light emitting layer having same material and structure as the second emitting layer and configured to generate light of the second wavelength, a second etch stop layer having same material and thickness as the first etch stop layer, and a second nanostructure reflective layer.
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公开(公告)号:US10908437B2
公开(公告)日:2021-02-02
申请号:US15674103
申请日:2017-08-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byunghoon Na , Yonghwa Park
IPC: G02F1/01 , G02F1/03 , G02F1/15 , G09G3/38 , H04N9/16 , G02F1/21 , G02F1/055 , H04B10/548 , H04B10/67 , H04B10/80 , G02F1/015
Abstract: Provided are optical modulators and devices including the optical modulators. The optical modulator may include an optical modulation layer that includes a phase change material. A first electrode may be provided on a first surface of the optical modulation layer. A second electrode may be provided on a second surface of the optical modulation layer. A first phase controlling layer may be provided, the first electrode being disposed between the first phase controlling layer and the optical modulation layer. A second phase controlling layer may be provided, the second electrode being disposed between the second phase controlling layer and the optical modulation layer. Each of the first and the second phase controlling layers may have an optical thickness corresponding to an odd multiple of λ/4, where λ is a wavelength of incident light to be modulated by the optical modulator. The optical modulator may further include at least one reflective layer. The optical modulation layer may have a thickness of about 10 nm or less. An operating voltage of the optical modulator may be about 10 V or less.
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53.
公开(公告)号:US10727370B2
公开(公告)日:2020-07-28
申请号:US15332528
申请日:2016-10-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byunghoon Na , Changyoung Park , Yonghwa Park
Abstract: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.
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54.
公开(公告)号:US20200073029A1
公开(公告)日:2020-03-05
申请号:US16441661
申请日:2019-06-14
Applicant: SAMSUNG ELECTRONICS CO., LTD. , UNIVERSITY OF MASSACHUSETTS
Inventor: Seunghoon HAN , Byunghoon Na , Babak Mirzapourbeinekalaye , Amir Arbabi
Abstract: Provided is a metamaterial-based reflector including a first metamaterial layer including an array of first nanostructures, and a second metamaterial layer provided on the first metamaterial layer, the second metamaterial layer including an array of second nanostructures, wherein an arrangement of the second nanostructures is different from an arrangement the first nanostructures.
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55.
公开(公告)号:US10529060B2
公开(公告)日:2020-01-07
申请号:US15690972
申请日:2017-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Namseop Kwon , Byunghoon Na , Yonghwa Park , Jangwoo You , Heesun Yoon
Abstract: A time of flight (ToF) measuring apparatus and an image processing method for reducing blur of a depth image in the ToF measuring apparatus are provided. The apparatus senses infrared (IR) light reflected by a subject and incident via an optical shutter, models a spread characteristic of the IR light based on an intensity distribution of the sensed IR light, and acquires a sharpening filter by using the modeled spread characteristic.
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公开(公告)号:US10367332B2
公开(公告)日:2019-07-30
申请号:US15288118
申请日:2016-10-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changyoung Park , Byunghoon Na , Yonghwa Park
Abstract: An edge emitting laser light source and a three-dimensional (3D) image obtaining apparatus including the edge emitting laser light source are provided. The edge emitting laser light source includes a substrate; an active layer disposed on the substrate; a wavelength selection section comprising grating regions configured to select wavelengths of light emitted from the active layer; and a gain section configured to resonate the light having the selected wavelengths in a direction parallel with the active layer.
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公开(公告)号:US20190137856A1
公开(公告)日:2019-05-09
申请号:US15933627
申请日:2018-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byunghoon Na , Jangwoo You , Seunghoon Han
CPC classification number: G01B11/25 , G01B11/2504 , G01B11/2509 , G01B11/2513 , G01B11/2518 , G01B11/2522 , G01B11/2527 , G01B11/2531 , G01B11/2536 , G01B11/254 , G01B11/2545 , G02B1/002 , G02B5/1809 , G02B5/1819 , G02B5/1828 , G02B5/3058 , G02B5/3083 , G02B27/0905 , G02B27/0938 , G02B27/28 , G02B27/285 , G03B21/2013 , G03B21/2073 , G06F21/31 , G06K9/00221 , G06K9/00288 , G06K9/00617 , G06K9/2027 , G06K9/2036
Abstract: A meta projector includes a light source array configured to emit light along an optical path. The light source array includes a first light-emitting array including a plurality of first light-emitting configured to emit first light having a first set of light properties and a second light-emitting array including a plurality of second light-emitting elements configured to emit a second light having a second set of light properties, the second set of light properties different from the first set of light properties. The meta projector includes a meta-structure layer aligned with the optical path. The meta projector includes a plurality of nanostructures having a sub-wavelength shape dimension that is smaller than a wavelength of light emitted from the light source array. The meta-structure layer is configured to differently modulate the first light and the second light in relation to each other.
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公开(公告)号:US09841617B2
公开(公告)日:2017-12-12
申请号:US14492733
申请日:2014-09-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yongchul Cho , Yongtak Lee , Byunghoon Na , Changyoung Park , Gunwu Ju , Yonghwa Park
IPC: H01L31/00 , H01L33/00 , H01L29/66 , H01L29/04 , H01L29/40 , G02F1/03 , G02F1/017 , H01L31/0352 , H01L31/075 , H01L31/105 , H01L33/58 , H01L23/532 , H01L33/10 , H01L33/04 , H01L33/62 , H01L23/528 , G02F1/1335 , H01L33/46 , H01L33/60 , H01L33/42 , H01L33/50 , B82Y20/00 , G02F1/015
CPC classification number: G02F1/01725 , B82Y20/00 , G02F1/133605 , G02F2001/0157 , G02F2001/01733 , G02F2001/0175 , G02F2001/01766 , H01L23/528 , H01L23/53223 , H01L31/00 , H01L31/035236 , H01L31/075 , H01L31/105 , H01L33/04 , H01L33/10 , H01L33/42 , H01L33/46 , H01L33/502 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/05124 , H01L2924/00 , H01L2924/00014 , H01L2924/12042 , Y02E10/548 , Y10S977/755
Abstract: An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.
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