利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

65 条记录 (耗时 0.036 秒)

    Solid state extension method
    54.
    发明授权
    Solid state extension method 失效
    固态扩展方法

    公开(公告)号：US6017682A

    公开(公告)日：2000-01-25

    申请号：US979382

    申请日：1997-11-26

    申请人： Marie Angelopoulos ,  Claudius Feger ,  Jeffrey Donald Gelorme ,  Jane Margaret Shaw

    发明人： Marie Angelopoulos ,  Claudius Feger ,  Jeffrey Donald Gelorme ,  Jane Margaret Shaw

    IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/40

    CPC分类号： G03F7/0387 ,  G03F7/0045 ,  Y10S430/143 ,  Y10S430/167

    摘要： A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing photo-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.

    摘要翻译： 固态链延伸方法提供了通过将路易斯酸低聚物链路延伸解链路易斯碱同时反应物呈固态形式形成由高分子量聚合物构成的固态膜。 在一个实施方案中，通过选择性地暴露固态膜的区域来制备负性抗蚀剂。 路易斯碱通过合适的去块装置在暴露区域解封。 路易斯酸低聚物和解封的路易斯碱基链在暴露的区域延伸。 膜的开发除去未聚合的反应物。 任选地，当辐射交联时，路易斯酸低聚物在将路易斯碱解封以形成负性抗蚀剂之前彼此交联。 交联的低聚物与随后的解封底物聚合以提供高分子量聚合物膜。 在替代实施方案中，通过使用选择性曝光光刻技术降解和除去光敏路易斯酸低聚物，然后使路易斯碱和链在未曝光区域上与解封的路易斯碱扩展剩余的低聚物链，使用正性抗蚀剂。

    Solid state chain extension polymerization between Lewis acid oligomers and deblocked Lewis bases
    55.
    发明授权
    Solid state chain extension polymerization between Lewis acid oligomers and deblocked Lewis bases 失效
    路易斯酸低聚物和解封路易斯碱之间的固态链延伸聚合

    公开(公告)号：US5382637A

    公开(公告)日：1995-01-17

    申请号：US785734

    申请日：1991-10-31

    申请人： Marie Angelopoulos ,  Claudius Feger ,  Jeffrey D. Gelorme ,  Jane M. Shaw

    发明人： Marie Angelopoulos ,  Claudius Feger ,  Jeffrey D. Gelorme ,  Jane M. Shaw

    IPC分类号： C08G73/10 ,  G03F7/004 ,  G03F7/038 ,  C08L77/00 ,  C08L79/08

    CPC分类号： C08G73/101 ,  G03F7/0045 ,  G03F7/0387

    摘要： A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing phot-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.

    摘要翻译： 固态链延伸方法提供了通过将路易斯酸低聚物链路延伸解链路易斯碱同时反应物呈固态形式形成由高分子量聚合物构成的固态膜。 在一个实施方案中，通过选择性地暴露固态膜的区域来制备负性抗蚀剂。 路易斯碱通过合适的去块装置在暴露区域解封。 路易斯酸低聚物和解封的路易斯碱基链在暴露的区域延伸。 膜的开发除去未聚合的反应物。 任选地，当辐射交联时，路易斯酸低聚物在将路易斯碱解封以形成负性抗蚀剂之前彼此交联。 交联的低聚物与随后的解封底物聚合以提供高分子量聚合物膜。 在替代实施方案中，通过使用选择性曝光光刻技术降解和除去光敏路易斯酸低聚物，并且随后使路易斯碱和链在未曝光区域上与解封的路易斯碱扩展剩余的低聚物，使用正性抗蚀剂。

    CHIP CARRIER BEARING LARGE SILICON FOR HIGH PERFORMANCE COMPUTING AND RELATED METHOD
    58.
    发明申请
    CHIP CARRIER BEARING LARGE SILICON FOR HIGH PERFORMANCE COMPUTING AND RELATED METHOD 审中-公开
    用于高性能计算的芯片承载大尺寸硅和相关方法

    公开(公告)号：US20100164030A1

    公开(公告)日：2010-07-01

    申请号：US12347490

    申请日：2008-12-31

    申请人： Stefano S. Oggioni ,  Edmund D. Blackshear ,  Claudius Feger

    发明人： Stefano S. Oggioni ,  Edmund D. Blackshear ,  Claudius Feger

    IPC分类号： H01L23/08 ,  H01L31/0232 ,  H01L21/71

    CPC分类号： H01L23/145 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/49827 ,  H01L23/49894 ,  H01L2224/73204 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/00

    摘要： Embodiments of the present invention provide a system and method for manufacturing integrated circuit (IC) chip packages. In one embodiment, the integrated circuit (IC) chip package can include an IC chip and a substrate coupled to the IC chip. The substrate can include a glass fiber re-enforced epoxy core, a plurality copper circuitry containing particle re-enforced epoxy layers symmetrically-oriented to each surface of the glass fiber re-enforced epoxy core, and an outermost amorphous glass layer on each surface of the plurality of layers. The IC chip can be coupled to copper circuitry bonded to one of the outermost amorphous glass layers.

    摘要翻译： 本发明的实施例提供一种用于制造集成电路（IC）芯片封装的系统和方法。 在一个实施例中，集成电路（IC）芯片封装可以包括IC芯片和耦合到IC芯片的衬底。 基板可以包括玻璃纤维再强化的环氧树脂芯，多个铜电路，其包含对称地定向到玻璃纤维再强化环氧树脂芯的每个表面的颗粒再强化的环氧树脂层，以及每个表面上的最外面的非晶玻璃层 多层。 IC芯片可以耦合到结合到最外面的非晶玻璃层之一的铜电路。