公开(公告)号：US20050265662A1

公开(公告)日：2005-12-01

申请号：US11139540

申请日：2005-05-31

申请人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

发明人： Junji Oohara ,  Shinji Yoshihara ,  Yukihiro Takeuchi

IPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B27/00 ,  H01L21/311

CPC分类号： G02B6/136 ,  G02B6/122 ,  G02B6/4207

摘要： An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.

摘要翻译： 光学器件包括：硅衬底; 多个具有矩形平面形状的氧化硅柱; 以及设置在列之间的空腔。 每列具有设置在基板上的下部。 每列具有定义为W 1的宽度。空腔的宽度定义为W 2.W 1 / W 2的比率随着进入塔的下部而变小。 由柱和空腔提供的芯层可以容易地具有等于或大于几十个的厚度。 因此，光源与设备之间的连接损耗减小。

公开(公告)号：US20050182574A1

公开(公告)日：2005-08-18

申请号：US11055382

申请日：2005-02-09

申请人： Yukihiro Sano ,  Yukihiro Takeuchi ,  Yositugu Abe

发明人： Yukihiro Sano ,  Yukihiro Takeuchi ,  Yositugu Abe

IPC分类号： G01N27/00 ,  G01N27/04 ,  G01N33/00 ,  G06F19/00

CPC分类号： G01N33/005

摘要： A method of detecting hydrogen concentration, while maintaining high precision, is provided. The method of detecting the hydrogen concentration by using a first heat-generating resistor of which a first electrophysical quantity varies depending upon the hydrogen concentration and a second heat-generating resistor which is neighboring said first heat-generating resistor in a direction of gas flow and of which a second electrophysical quantity varies depending upon the hydrogen concentration as does the first electrophysical quantity, to detect the concentration of hydrogen based on the first electrophysical quantity and the second electrophysical quantity, the method comprising a step (S3) of calculating the amount of change in a target physical quantity, which is either the first electrophysical quantity or the second electrophysical quantity, a step (S5) of calculating the correction amount based on a difference between the first electrophysical quantity and the second electrophysical quantity, and a step (S7) of calculating the concentration of hydrogen based on a difference between the amount of change in the target physical quantity and the correction amount.

摘要翻译： 提供了一种在保持高精度的同时检测氢浓度的方法。 通过使用其第一电生理量根据氢浓度而变化的第一发热电阻器和与气体流动方向相邻的所述第一发热电阻器的第二发热电阻器来检测氢浓度的方法，以及 其中第二电物量根据第一电化学数量的氢浓度而变化，以基于第一电物量和第二电物量检测氢的浓度，该方法包括计算量的步骤（S 3） 作为第一电物量或第二电物量的目标物理量的变化，基于第一电物量与第二电物量之间的差计算校正量的步骤（S 5），以及步骤 （S 7）基于差异计算氢的浓度 目标物理量的变化量与校正量之间的差异。

公开(公告)号：US06909158B2

公开(公告)日：2005-06-21

申请号：US10703460

申请日：2003-11-10

申请人： Tetsuo Yoshioka ,  Yukihiro Takeuchi ,  Kazuhiko Kano

发明人： Tetsuo Yoshioka ,  Yukihiro Takeuchi ,  Kazuhiko Kano

IPC分类号： G01P15/125 ,  H01L29/84 ,  H01L27/00

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： A capacitance type dynamical quantity sensor includes a semiconductor substrate, a weight portion being displaced in accordance with a dynamical quantity, a movable electrode integrated with the weight portion, and a fixed electrode facing the movable electrode. The movable electrode and the fixed electrode provide a capacitor having a capacitance. The movable electrode is movable in accordance with the dynamical quantity. The capacitance of capacitor is changed in accordance with a displacement of the movable electrode so that the dynamical quantity as the capacitance change is measured with an outer circuit. The facing surface of the movable electrode facing the fixed electrode has a substantially rectangular shape, and an aspect ratio of the facing surface is in a range between 0.1 and 10.

摘要翻译： 电容型动力传感器包括半导体衬底，根据动力位移的重量部分，与重量部分一体化的可动电极和面对可动电极的固定电极。 可动电极和固定电极提供具有电容的电容器。 可移动电极可根据动态量移动。 电容器的电容根据可动电极的位移而变化，从而以外部电路测量作为电容变化的动力学量。 面对固定电极的可动电极的面对面具有大致矩形形状，并且面对面的纵横比在0.1和10之间的范围内。

公开(公告)号：US06595050B2

公开(公告)日：2003-07-22

申请号：US10196275

申请日：2002-07-17

申请人： Kazuhiko Kano ,  Yukihiro Takeuchi

发明人： Kazuhiko Kano ,  Yukihiro Takeuchi

IPC分类号： G01F168

CPC分类号： G01F1/692 ,  G01F1/6845 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2924/00

摘要： A sensor includes a first insulating layer, a second insulating layer having an opening, a plurality of metal wirings, and a plurality of electrodes. Each metal wiring has a contacting area. Each metal wiring is located between the first and second insulating layers. Each electrode has a bonding region located separately from the contacting area. The electrodes are in electrical connect with the contacting areas through the openings. A part of each metal wiring is located beneath each bonding region. The electrodes include any of aluminum, two metals of gold and titan, or three metals of gold, nickel, and titan. When the electrodes include aluminum, the electrodes are annealed such that the surface roughness of the electrode is smaller than 100 angstroms. When the electrodes include the two or three metals, the electrodes are annealed in an atmosphere that a partial pressure of oxygen is lower than 10−1 Pa.

摘要翻译： 传感器包括第一绝缘层，具有开口的第二绝缘层，多个金属布线和多个电极。 每个金属布线都有一个接触区域。 每个金属布线位于第一和第二绝缘层之间。 每个电极具有与接触区域分开定位的结合区域。 电极通过开口与接触区域电连接。 每个金属布线的一部分位于每个接合区域的下方。 电极包括铝，金和钛的两种金属或金，镍和钛的三种金属中的任何一种。 当电极包括铝时，电极被退火，使得电极的表面粗糙度小于100埃。 当电极包括两种或三种金属时，电极在氧分压低于10-1Pa的气氛中退火。

公开(公告)号：US6151966A

公开(公告)日：2000-11-28

申请号：US304849

申请日：1999-05-05

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Seiji Fujino ,  Tsuyoshi Fukada ,  Hiroshige Sugito ,  Minoru Murata ,  Hiroshi Muto ,  Hirofumi Higuchi ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01L1/00

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.

摘要翻译： 通过微加工在SOI衬底上形成半导体加速度计装置。 可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。 可动电极与配重部一体地形成为梳形。 一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。 多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。 这种结构减小了每个电极的重量，同时增加了抗扭力的强度。 由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

公开(公告)号：US5936159A

公开(公告)日：1999-08-10

申请号：US755097

申请日：1996-11-25

申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84

CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0814 ,  G01P2015/0828

摘要： A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.

摘要翻译： 一种半导体传感器，包括具有减小的偏转特性的可动构件梁结构。 传感器包括从半导体衬底悬挂的可移动的光束结构膜，其间插入在光束结构膜和衬底之间。 束结构膜由沿膜厚方向层叠的多个膜层构成。 此外，应力消除层插入在各个膜之间以减小结构上的整体内部应力。

公开(公告)号：US5824608A

公开(公告)日：1998-10-20

申请号：US671473

申请日：1996-06-27

申请人： Yoshitaka Gotoh ,  Makiko Fujita ,  Yukihiro Takeuchi

发明人： Yoshitaka Gotoh ,  Makiko Fujita ,  Yukihiro Takeuchi

IPC分类号： G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  G01P15/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

CPC分类号： B81B3/001 ,  G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

摘要： A polysilicon thin film is formed on a silicon substrate by LPCVD technique. At this time, by a performing film formation at a low temperature of approximately 620.degree. C., for example, an irregularities portion is formed on the surface thereof. A silicon oxide film that serves as a sacrificial layer is formed thereon and, on this sacrificial layer, a polysilicon thin film that serves as a movable portion forming thin film is formed. Then, the silicon oxide film beneath this polysilicon thin film is removed by wet etching to thereby form a movable portion. As a result, the movable portion of a beam structure that is composed of the thin film is disposed over the silicon substrate at a prescribed distance therefrom. Although an etchant-replacing liquid enters between the movable portion and the substrate whereby the movable portion is attracted toward the substrate, the movable portion is prevented from adhering to the substrate by means of the irregularities portion.

摘要翻译： 通过LPCVD技术在硅衬底上形成多晶硅薄膜。 此时，通过在约620℃的低温下进行成膜，例如，在其表面上形成凹凸部。 在其上形成用作牺牲层的氧化硅膜，并且在该牺牲层上形成用作可移动部分形成薄膜的多晶硅薄膜。 然后，通过湿蚀刻除去该多晶硅薄膜下方的氧化硅膜，从而形成可动部。 结果，由薄膜构成的光束结构的可动部分以规定的距离设置在硅衬底上。 尽管蚀刻剂置换液体进入到可动部分和基板之间，由此可动部分被吸引到基板上，但是通过不规则部分防止可移动部分粘附到基板上。