公开(公告)号：US5810572A

公开(公告)日：1998-09-22

申请号：US713480

申请日：1996-09-13

Applicant: Shuichi Yamamoto ,  Kiyoshi Sano ,  Syouzou Hase ,  Takashi Morimoto ,  Katsuharu Fujio

Inventor： Shuichi Yamamoto ,  Kiyoshi Sano ,  Syouzou Hase ,  Takashi Morimoto ,  Katsuharu Fujio

IPC: F04C18/02 ,  F04C23/00 ,  F04C29/12 ,  F04C18/04 ,  F04C29/02

CPC classification number: F04C29/128 ,  F04C18/0215 ,  F04C23/008

Abstract: A scroll compressor includes a stationary scroll member accommodated in a closed housing and having a stationary end plate and a stationary scroll wrap protruding axially from the stationary end plate, and also includes an orbiting scroll member accommodated in the closed housing and having an orbiting end plate and an orbiting scroll wrap protruding axially from the orbiting end plate so as to engage with the stationary scroll wrap to define a plurality of working pockets therebetween. A crankshaft is provided to drive the orbiting scroll member, and the crankshaft includes a main shaft and an auxiliary shaft on opposite sides thereof. A main bearing supports the main shaft of the crankshaft. A bearing frame is secured to an inner surface of the closed housing, and an auxiliary bearing is mounted to the bearing frame to support the auxiliary shaft of the crankshaft. The closed housing has an oil sump formed therein to accommodate lubricating oil, and an oil passage is formed in the bearing frame so as to extend into the oil sump. An oil feed device is mounted on the bearing frame and engages with one end of the auxiliary shaft to feed the lubricating oil from the oil sump through the oil passage.

Abstract translation: 涡旋压缩机包括容纳在封闭壳体中并具有固定端板和从固定端板轴向突出的固定涡旋盘的固定涡旋件，并且还包括容纳在封闭壳体中并具有绕动端板的动涡旋件 以及从所述绕动端板轴向突出的绕动涡旋盘，以便与所述固定涡卷缠绕以在其间限定多个工作凹部。 设置曲轴以驱动绕动涡旋件，曲轴在其相对侧包括主轴和辅助轴。 主轴承支撑曲轴的主轴。 轴承框架固定在封闭壳体的内表面上，辅助轴承安装在轴承架上以支撑曲轴的辅助轴。 封闭的壳体具有形成在其中的油底壳以容纳润滑油，并且在轴承框架中形成油通道以延伸到油底壳中。 供油装置安装在轴承架上并与辅助轴的一端接合，以通过油路将油底壳的润滑油供给。

公开(公告)号：US5798008A

公开(公告)日：1998-08-25

申请号：US680402

申请日：1996-07-15

Applicant: Keishi Nogami ,  Masato Koide ,  Takashi Morimoto ,  Yutaka Koshiba

Inventor： Keishi Nogami ,  Masato Koide ,  Takashi Morimoto ,  Yutaka Koshiba

IPC: B22C9/06 ,  B22D11/04 ,  B22D11/059 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08 ,  B22C9/00 ,  B22C7/06

CPC classification number: B22C9/061 ,  C22F1/08

Abstract: A method for producing copper alloy materials for molds for continuous steel casting and molds as produced by the method. The molds are highly resistant to thermal fatigue and are hardly cracked. To produce the materials, cast ingots of a copper-based chromium-zirconium alloy comprising from 0.2 to 1.5% by weight of Cr and from 0.02 to 0.2% by weight of Zr are heated at between 900.degree. C. and 1000.degree. C. for 30 minutes or longer and then rolled, while hot, at a reduction ratio of 60% or more to be at 850.degree. C. or higher at which the hot rolling is finished , and immediately after the hot rolling, these are rapidly cooled to 400.degree. C. or lower at a cooling rate of 10.degree.C./sec or more, and then aged at between 400.degree. C. and 520.degree. C. for from 1 hour to 5 hours.

Abstract translation: 一种生产连续铸钢模具用铜合金材料的方法。 模具高度耐热疲劳，难以破裂。 为了生产材料，将包含0.2至1.5重量％的Cr和0.02至0.2重量％的Zr的铜基铬 - 锆合金铸造锭在900℃和1000℃之间加热， 30分钟以上，然后在热轧的同时热轧，以60％以上的压下率为850℃以上，热轧结束后，在热轧后，迅速将其冷却至400℃ ℃以下，冷却速度为10℃/秒以上，然后在400℃〜520℃下老化1小时〜5小时。

公开(公告)号：US5585659A

公开(公告)日：1996-12-17

申请号：US320690

申请日：1994-10-11

Applicant: Toshio Kobayashi ,  Yukio Okazaki ,  Masayasu Miyake ,  Hiroshi Inokawa ,  Takashi Morimoto

Inventor： Toshio Kobayashi ,  Yukio Okazaki ,  Masayasu Miyake ,  Hiroshi Inokawa ,  Takashi Morimoto

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/02 ,  H01L29/78 ,  H01L29/76

CPC classification number: H01L21/823842

Abstract: A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.

Abstract translation: 一种用于制造半导体器件的方法，其中用于互补型场效应半导体器件的多晶硅栅极由同时掺杂到多晶硅沉积的杂质的多晶硅形成; 两个门具有双N + / P +多晶硅栅极结构，使得N沟道晶体管和P沟道晶体管形成为表面沟道​​型晶体管; 因此，进行关闭特性，短通道效应和阈值电压的可控性。 更具体地，在公共半导体衬底（1）上提供N沟道和P沟道MISFET。 采用N型杂质掺杂的N型多晶硅（9）作为N沟道MISFET的栅电极; 采用掺杂有P型杂质的P型多晶硅（8）作为P沟道MISFET的栅电极; 并且在各个多晶硅的部分之间设置防止杂质相互扩散的窄区域。

公开(公告)号：US5462997A

公开(公告)日：1995-10-31

申请号：US328771

申请日：1994-10-27

Applicant: Noriaki Saito ,  Takashi Morimoto ,  Kazuo Takebe ,  Yutaka Shiomi ,  Shigeki Naitoh ,  Shuichi Kanagawa

Inventor： Noriaki Saito ,  Takashi Morimoto ,  Kazuo Takebe ,  Yutaka Shiomi ,  Shigeki Naitoh ,  Shuichi Kanagawa

IPC: C08G8/20 ,  C08G59/00 ,  C08G59/06 ,  C08G59/08 ,  C08G59/20 ,  C08G59/32 ,  C08G59/62 ,  C08L63/00 ,  C08G8/36 ,  C08L63/04

CPC classification number: C08G59/08 ,  C08G59/3218 ,  C08G59/621 ,  Y10T428/239 ,  Y10T428/24917

Abstract: An epoxy resin composition contains (a) an epoxy resin represented by the general formula (2) ##STR1## wherein R.sub.1 to R.sub.4 independently represent hydrogen, an alkyl or cycloalkyl group having 1 to 9 carbon atoms, or halogen, and X represents hydrogen, an alkyl group having 1 to 9 carbon atoms, or an aryl and n represents an average number of repeating units of 0.1 to 1.6; and a curing agent.

Abstract translation: 环氧树脂组合物含有（a）由通式（2）表示的环氧树脂，其中R1至R4独立地表示氢，具有1至9个碳原子的烷基或环烷基或卤素，X表示氢， 具有1至9个碳原子的烷基或芳基，n表示重复单元的平均数为0.1至1.6; 和固化剂。

公开(公告)号：US5267917A

公开(公告)日：1993-12-07

申请号：US964634

申请日：1992-10-23

Applicant: Masanori Kadotani ,  Masahiro Haybuchi ,  Takashi Morimoto ,  Kazumasa Tsukamoto ,  Yasuo Hojo ,  Hidehiro Oba ,  Yutaka Taga

Inventor： Masanori Kadotani ,  Masahiro Haybuchi ,  Takashi Morimoto ,  Kazumasa Tsukamoto ,  Yasuo Hojo ,  Hidehiro Oba ,  Yutaka Taga

IPC: F16D41/00 ,  F16D55/40 ,  F16H3/66 ,  F16H57/08 ,  F16H63/30 ,  F16H57/10

CPC classification number: F16H57/08

Abstract: A rotary element engaging device of an automatic transmission includes a stationary member, a planetary gear set having rotary elements, a frictionally engaging element interposed between the stationary member and one of the rotary elements, a one-way clutch interposed between the stationary member and the one rotary element, and an operating member for engaging and disengaging the frictionally engaging element. The rotary element is adapted to be selectively engaged with the stationary member through two paths formed of the frictionally engaging element and the one-way clutch. The one-way clutch is disposed between the frictionally engaging element and the operating member. The one-way clutch includes an inner race connected to the one rotary element and an outer race fixed to the stationary member. The operating member is adapted to act on the frictionally engaging element through the outer race.

Abstract translation: 自动变速器的旋转元件接合装置包括固定构件，具有旋转元件的行星齿轮组，设置在静止构件和其中一个旋转元件之间的摩擦接合元件，插入在静止构件和静止构件之间的单向离合器 一个旋转元件和用于接合和分离摩擦接合元件的操作构件。 旋转元件适于通过由摩擦接合元件和单向离合器形成的两个路径选择性地与固定构件接合。 单向离合器设置在摩擦接合元件和操作构件之间。 单向离合器包括连接到一个旋转元件的内圈和固定到静止构件的外圈。 操作构件适于通过外圈作用在摩擦接合元件上。

公开(公告)号：US4448800A

公开(公告)日：1984-05-15

申请号：US403531

申请日：1982-07-30

Applicant: Kohei Ehara ,  Susumu Muramoto ,  Takashi Morimoto ,  Seitaro Matsuo ,  Manabu Itsumi

Inventor： Kohei Ehara ,  Susumu Muramoto ,  Takashi Morimoto ,  Seitaro Matsuo ,  Manabu Itsumi

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/302

CPC classification number: H01L21/7688 ,  H01L21/033 ,  Y10S148/10 ,  Y10S148/105 ,  Y10S438/951

Abstract: A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the fear of contamination, permits easy lift off of the lift-off material, even if large in area, and hence suitable for the formation of a high-density pattern.

Abstract translation: 一种半导体制造方法，其使用难熔金属作为剥离材料，并用组合使用适于形成无底切的微型图案的干式蚀刻工艺，以及用于沿方向取向剥离材料的膜沉积方法 垂直于衬底表面。 半导体器件通过剥离方法制造，其不受污染的恐惧，即使面积大，容易剥离剥离材料，因此适合于形成高密度图案。

公开(公告)号：US09823269B2

公开(公告)日：2017-11-21

申请号：US13230644

申请日：2011-09-12

Applicant: Takashi Morimoto

Inventor： Takashi Morimoto

IPC: G01Q30/04 ,  B82Y35/00

CPC classification number: G01Q30/04 ,  B82Y35/00

Abstract: A technique for allowing users to efficiently specify a region of interest (ROI) on a sample for a certain physical quantity (e.g. phase) other than the altitude is provided. A range-indicating image showing a range that can be observed on a sample is displayed on a navigation window in a sample observation display screen. An ROI-indicating frame for specifying a magnified observation range is superposed on the range-indicating image. A list of thumbnails of previously taken magnified images for the same sample is displayed on an image history display window. When an observer selects any image from this list, the thumbnail of the selected image is mapped onto the range-indicating image. With reference to this image, the observer can change the position, size and/or angle of the ROI-indicating frame by a mouse operation. In response to this operation, a magnified image of the sample within the new ROI is acquired.

公开(公告)号：US09239363B2

公开(公告)日：2016-01-19

申请号：US12974828

申请日：2010-12-21

Applicant: Akihiro Matsui ,  Kazuto Kuroda ,  Yasuhiro Harada ,  Shinichiro Kosugi ,  Hisashi Oya ,  Mami Mizutani ,  Takashi Morimoto ,  Takeo Hayase ,  Yukitaka Monden ,  Norio Takami

Inventor： Akihiro Matsui ,  Kazuto Kuroda ,  Yasuhiro Harada ,  Shinichiro Kosugi ,  Hisashi Oya ,  Mami Mizutani ,  Takashi Morimoto ,  Takeo Hayase ,  Yukitaka Monden ,  Norio Takami

IPC: H02J7/00 ,  G01R31/36 ,  H01M10/48 ,  G06Q50/06 ,  B60L3/00 ,  B60L3/04 ,  B60L3/12 ,  B60L11/18

CPC classification number: G01R31/3634 ,  B60L3/0046 ,  B60L3/04 ,  B60L3/12 ,  B60L11/1853 ,  B60L11/1861 ,  B60L11/1864 ,  B60L2240/545 ,  B60L2240/547 ,  B60L2240/549 ,  G01R31/3651 ,  G01R31/3658 ,  G01R31/3662 ,  G01R31/3679 ,  G01R31/3689 ,  G06Q50/06 ,  H01M10/48 ,  H01M2220/20 ,  Y02T10/7005 ,  Y02T10/7044 ,  Y02T10/7061

Abstract: An apparatus is disclosed that includes a resistance measuring unit operable to determine a solution resistance Rsol and a charge transfer resistance Rct of a battery; and at least one computer-readable non-transitory storage medium comprising code, that, when executed by at least one processor, is operable to provide an estimate of the present value of the battery by: comparing Rsol and Rct to historical deterioration transition information; estimating the number of remaining charge cycles before a discharge capacity lower limit is reached by the battery using the comparison; and estimating the number of remaining charge cycles before a discharge time lower limit is reached by the battery using the comparison. The estimate of the present value of the battery includes the smaller of the number of remaining charge cycles before a discharge capacity lower limit is reached or the number of remaining charge cycles before a discharge time lower limit is reached.

公开(公告)号：US08846449B2

公开(公告)日：2014-09-30

申请号：US13637729

申请日：2012-04-02

Applicant: Takashi Morimoto ,  Takeshi Nakayama ,  Takashi Hashimoto

Inventor： Takashi Morimoto ,  Takeshi Nakayama ,  Takashi Hashimoto

IPC: H01L21/44 ,  H01L23/48 ,  H01L27/06 ,  H01L25/065 ,  H01L23/528

CPC classification number: H01L23/485 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5286 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2224/16145 ,  H01L2224/48 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06558 ,  H01L2225/06565 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: One aspect of the present invention is a three-dimensional integrated circuit 1 including a first semiconductor chip and a second semiconductor chip that are layered on each other, wherein each of (i) a wiring layer closest to an interface between the first and second semiconductor chips among wiring layers of the first semiconductor chip and (ii) a wiring layer closest to the interface among wiring layers of the second semiconductor chip includes a power conductor area and a ground conductor area, a layout of the power conductor area and the ground conductor area in the first semiconductor chip is the same as a layout of the power conductor area and the ground conductor area in the second semiconductor chip, and the power conductor area in the first semiconductor chip at least partially faces the ground conductor area in the second semiconductor chip with an insulation layer therebetween.

Abstract translation: 本发明的一个方面是包括彼此层叠的第一半导体芯片和第二半导体芯片的三维集成电路1，其中，（i）最靠近第一和第二半导体之间的界面的布线层 第一半导体芯片的布线层之间的芯片和（ii）最靠近第二半导体芯片的布线层之间的界面的布线层包括电源导体区域和接地导体区域，电源导体区域和接地导体的布局 第一半导体芯片中的区域与第二半导体芯片中的电源导体区域和接地导体区域的布局相同，并且第一半导体芯片中的电力导体区域至少部分地面对第二半导体中的接地导体区域 芯片之间具有绝缘层。

公开(公告)号：US08677567B2

公开(公告)日：2014-03-25

申请号：US13375071

申请日：2010-05-24

Applicant: Takao Kobayashi ,  Ikuomi Takahashi ,  Makoto Saito ,  Takashi Morimoto ,  Toshihiro Tamura

Inventor： Takao Kobayashi ,  Ikuomi Takahashi ,  Makoto Saito ,  Takashi Morimoto ,  Toshihiro Tamura

IPC: E05C17/64 ,  E05D5/02

CPC classification number: G06F1/1681 ,  Y10T16/5402 ,  Y10T16/540255 ,  Y10T16/5403 ,  Y10T16/54038 ,  Y10T16/557 ,  Y10T16/558 ,  Y10T16/5595

Abstract: Provided is a hinge that can be manufactured easily in a short time. The hinge rotatably connects a first member and a second member, and is provided with two brackets that are rotatable against each other and mounted to the first member and the second member, respectively, and a friction-torque-generating member that generates friction torque by directly or indirectly pressing the two brackets against each other. A first of the two brackets is configured from an integral structure that includes a shaft part that passes through the second bracket and supports the rotation, and a mounting part that is mounted to the first member or the second member, with the shaft part and the mounting part being produced from a plate material.

Abstract translation: 提供了可以在短时间内容易地制造的铰链。 铰链可旋转地连接第一构件和第二构件，并且设置有两个彼此可旋转地旋转并且分别安装到第一构件和第二构件的托架，以及摩擦转矩产生构件，其通过以下方式产生摩擦力矩： 直接或间接地将两个支架彼此靠在一起。 两个支架中的第一个由整体结构构成，其包括穿过第二支架并支撑旋转的轴部，以及安装到第一构件或第二构件的安装部，其具有轴部和 安装部件由板材制成。