公开(公告)号：US20060093731A1

公开(公告)日：2006-05-04

申请号：US11260253

申请日：2005-10-28

申请人： Katsuyuki Sekine ,  Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Kazuhiro Eguchi

IPC分类号： C23C16/52 ,  H05H1/24 ,  B05C11/00 ,  C23C16/00

CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01L21/67069 ,  H01L22/14

摘要： According to the present invention, there is provided a semiconductor device fabrication method comprising: measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of nitriding, oxidation, and impurity doping is to be performed on a surface of a semiconductor substrate in a processing vessel by using the plasma; calculating, for each semiconductor substrate, an exposure time during which the semiconductor substrate is exposed to the plasma, on the basis of the measured light emission intensity; and exposing each semiconductor substrate to the plasma on the basis of the calculated exposure time, thereby performing one of the nitriding, oxidation, and impurity doping.

公开(公告)号：US20050236678A1

公开(公告)日：2005-10-27

申请号：US10962673

申请日：2004-10-13

申请人： Motoyuki Sato ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Akio Kaneko

发明人： Motoyuki Sato ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Akio Kaneko

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L29/518 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/78

摘要： According to the present invention, there is provided a semiconductor device comprising: an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer; a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film; a gate electrode formed on said gate insulating film; and source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：界面绝缘膜，其选择性地形成在半导体衬底的预定区域上，并且具有基本上一个原子层的膜厚度; 形成在所述界面绝缘膜上并具有高于所述界面绝缘膜的介电常数的介电常数的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及源极和漏极区，形成在位于所述栅电极下方的沟道区的两侧的所述半导体衬底的表面区域中。

公开(公告)号：US06917442B1

公开(公告)日：2005-07-12

申请号：US09450236

申请日：1999-11-29

申请人： Kazuhiro Eguchi

发明人： Kazuhiro Eguchi

IPC分类号： B41J2/325 ,  B43L1/04 ,  G03G15/00 ,  G06F15/00

CPC分类号： G03G15/6564 ,  G03G2215/00945

摘要： In the case of using a plurality of printing means, even if a feeding speed of each printing means of the plurality of printing means is varied, a print of superior quality is always provided. The electronic print-board apparatus comprises a printing device for supplying a paper sheet P by a feeding roller to a printing section that is formed by a printing head and a platen roller and a control system. The control system pauses or reduces a speed of the feeding roller according to detection of a leading end of the paper sheet P by a paper detecting sensor so that the paper sheet P reaches the printing section coincidentally when an optical reading device starts scanning an image on a surface of a screen as it is revolved.

摘要翻译： 在使用多个打印装置的情况下，即使改变多个打印装置的每个打印装置的进给速度，总是提供优质的打印。 电子印刷板装置包括用于通过进给辊将纸张P供给到由打印头和压纸辊以及控制系统形成的打印部分的打印装置。 控制系统通过纸张检测传感器根据纸张P的前端的检测来暂停或降低进给辊的速度，使得当光学读取装置开始扫描图像时纸张P巧妙地到达打印部分 屏幕的表面旋转。

公开(公告)号：US20050121713A1

公开(公告)日：2005-06-09

申请号：US11033257

申请日：2005-01-12

申请人： Kabushiki Toshiba ,  Kazuhiro Eguchi

发明人： Kabushiki Toshiba ,  Kazuhiro Eguchi

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/55 ,  H01L27/10814 ,  H01L28/60

摘要： A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode formed on the capacitor insulating film.

公开(公告)号：US20050064667A1

公开(公告)日：2005-03-24

申请号：US10941814

申请日：2004-09-16

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

IPC分类号： H01L21/318 ,  H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/84 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/28202 ,  H01L21/022 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device manufacturing method comprises: forming a first nitride film on a semiconductor substrate; forming a first oxide film between said semiconductor substrate and said nitride film and forming a second oxide film on said nitride film; forming a second nitride film or an oxide and nitride film on said first nitride film by nitriding said second oxide film; and forming a gate electrode on a gate insulative film including said first oxide film, said first nitride film, and said second nitride film or said oxide and nitride film.

摘要翻译： 半导体器件制造方法包括：在半导体衬底上形成第一氮化物膜; 在所述半导体衬底和所述氮化物膜之间形成第一氧化物膜，并在所述氮化膜上形成第二氧化膜; 通过氮化所述第二氧化物膜在所述第一氮化物膜上形成第二氮化物膜或氧化物和氮化物膜; 以及在包括所述第一氧化物膜，所述第一氮化物膜和所述第二氮化物膜或所述氧化物和氮化物膜的栅极绝缘膜上形成栅电极。

公开(公告)号：US06599794B2

公开(公告)日：2003-07-29

申请号：US10195484

申请日：2002-07-16

申请人： Masahiro Kiyotoshi ,  Kazuhiro Eguchi ,  Masaaki Nakabayashi ,  Fumihiko Inoue

发明人： Masahiro Kiyotoshi ,  Kazuhiro Eguchi ,  Masaaki Nakabayashi ,  Fumihiko Inoue

IPC分类号： H01L218242

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L27/11507 ,  H01L28/91

摘要： A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.

公开(公告)号：US5084410A

公开(公告)日：1992-01-28

申请号：US257519

申请日：1988-10-14

申请人： Kazuhiro Eguchi ,  Tetsuo Sadamasa ,  Hideto Furuyama ,  Yuzo Hirayama

发明人： Kazuhiro Eguchi ,  Tetsuo Sadamasa ,  Hideto Furuyama ,  Yuzo Hirayama

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/10 ,  H01L31/105 ,  H01L33/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L21/02639 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1029 ,  H01L31/105 ,  H01L33/0062 ,  H01S5/2203 ,  H01S5/227 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32391 ,  Y10S438/973

摘要： A semiconductor device which comprises a semiconductor substrate having a surface orientation substantially in a {100}-orientation is provided. On the semiconductor substrate, plural steps formed in a direction deviated substantially from a -direction by 5 degrees or more are formed. The steps, which are mesa and concave portions, are buried by plural semiconductor crystal layers grown by the use of MOCVD or the like. A method of manufacturing such a device is also provided.

公开(公告)号：US4928285A

公开(公告)日：1990-05-22

申请号：US314176

申请日：1989-02-23

申请人： Mitsuhiro Kushibe ,  Kazuhiro Eguchi ,  Masahisa Funamizu ,  Yasuo Ohba

发明人： Mitsuhiro Kushibe ,  Kazuhiro Eguchi ,  Masahisa Funamizu ,  Yasuo Ohba

IPC分类号： H01S5/16 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/16 ,  H01S5/227 ,  H01S5/305 ,  H01S5/164 ,  H01S5/2275 ,  H01S5/3068 ,  H01S5/32391

摘要： An impurity-doped double-heterostructure semiconductor laser adapted for single-longitudinal-mode operation is disclosed which includes a semiconductive substrate and a mesa of double-heterostructure formed over the substrate. The mesa comprises an active layer serving as a light-emitting layer, a waveguiding layer adjacent to the active layer and clad layers interposing the active layer and the waveguiding layer therebetween. A high-resistively layer is formed to bury the lateral surfaces of the mesa. The active layer contains impurities of a rare earth element with a previously selected concentration. The limited concentration of impurities is high enough to confine only light components falling within a specific range of wavelength, of all the light components produced in the active layer when the laser device is operative, within the active layer so as to provide single wavelength laser oscillation and low enough to inhibit the initiation of spontaneous emission of the rare earth element within the active layer. For example, the concentration may be set to 1.times.10.sup.18 cm.sup.-3 or below.

摘要翻译： 公开了一种适用于单纵模操作的杂质掺杂双异质结构半导体激光器，其包括半导体基片和形成在基片上的双异质结构的台面。 台面包括用作发光层的有源层，与有源层相邻的波导层和在其间插入有源层和波导层的包层。 形成高电阻层以埋设台面的侧表面。 活性层含有预先选定浓度的稀土元素的杂质。 有限的杂质浓度足够高，仅限于在有源层内仅在有源层内限制落在特定波长范围内的所有在活性层中产生的光分量的光成分，以提供单波长激光振荡 并且足够低以抑制活性层内稀土元素的自发发射。 例如，浓度可以设定为1×10 18 cm -3以下。

公开(公告)号：US07858536B2

公开(公告)日：2010-12-28

申请号：US11902300

申请日：2007-09-20

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质，所述氧化硅膜含有所述金属元素，所述金属元素包括在其下表面附近的第一区域， 上表面和第一和第二区域之间的第三区域，包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布，存在于第三区域中的密度分布的峰值， 以及形成在栅极电介质上的电极。

公开(公告)号：US07816215B2

公开(公告)日：2010-10-19

申请号：US10941814

申请日：2004-09-16

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/022 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成栅极绝缘膜，方法是在衬底上形成第一氮化物膜; 形成第一氧化物膜和第二氧化物膜，所述第一氧化膜位于所述衬底和所述第一氮化物膜之间，所述第二氧化物膜位于所述第一氮化物膜上; 并且对所述第二氧化物膜进行氮化以在所述第一氮化物膜上形成以下之一：第二氮化物膜或SiON膜; 并在所述栅极绝缘膜上形成栅电极; 其中所述栅绝缘膜的等效氧化物厚度等于或小于1nm。