公开(公告)号：US06490146B2

公开(公告)日：2002-12-03

申请号：US09929806

申请日：2001-08-13

申请人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： C04B37/026 ,  C04B37/006 ,  C04B37/021 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/36 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/61 ,  C04B2237/62 ,  C04B2237/64 ,  C04B2237/74 ,  H01L21/6831 ,  H01L21/6833

摘要： An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

公开(公告)号：US5194138A

公开(公告)日：1993-03-16

申请号：US556109

申请日：1990-07-20

申请人： Florian B. Mansfeld ,  Hong Shih ,  You Wang

发明人： Florian B. Mansfeld ,  Hong Shih ,  You Wang

IPC分类号： C23C22/56

CPC分类号： C23C22/56

摘要： A method for treating the surface of an aluminum-based material so as to make the surface resistant to corrosion includes the steps of contacting the surface with an aqueous cerium non-halide solution and then contacting the surface with an aqueous cerium halide solution. These steps may optionally be followed by a step of positively charging the metal surface while in contact with an aqueous molybdenum solution.

摘要翻译： 用于处理铝基材料的表面以使表面耐腐蚀的方法包括使表面与无水卤化铈水溶液接触，然后使表面与卤化铈水溶液接触的步骤。 这些步骤可以任选地在与钼水溶液接触的同时对金属表面进行正电充电的步骤。

公开(公告)号：US09073169B2

公开(公告)日：2015-07-07

申请号：US13223159

申请日：2011-08-31

申请人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： Kun Xu ,  Ingemar Carlsson ,  Feng Q. Liu ,  David Maxwell Gage ,  You Wang ,  Dominic J. Benvegnu ,  Boguslaw A. Swedek ,  Yuchun Wang ,  Pierre Fontarensky ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： G06F19/00 ,  H01L21/00 ,  B24B49/00 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  G01B11/06

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/107 ,  B24B37/30 ,  B24B49/12 ,  G01B11/0683

摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

摘要翻译： 控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。 在抛光期间，用原位监测系统监测基底以产生测量序列。 测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。 对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。 基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。 使用至少一个调整的抛光压力来抛光第二基底。

公开(公告)号：US20140221662A1

公开(公告)日：2014-08-07

申请号：US14123870

申请日：2010-12-17

申请人： Dawei Ma ,  Shaolin Zhu ,  Shouyun Yu ,  You Wang ,  Qianghui Zhou

发明人： Dawei Ma ,  Shaolin Zhu ,  Shouyun Yu ,  You Wang ,  Qianghui Zhou

IPC分类号： C07C319/12 ,  C07D207/14 ,  C07D213/73 ,  C07C227/16 ,  C07C229/66 ,  C07C227/14

CPC分类号： C07C319/12 ,  C07B2200/07 ,  C07C227/14 ,  C07C227/16 ,  C07C229/66 ,  C07C233/31 ,  C07C271/18 ,  C07C323/61 ,  C07C2601/14 ,  C07C2601/16 ,  C07D207/14 ,  C07D209/48 ,  C07D213/73 ,  C07D401/04 ,  C07D403/04

摘要： Chiral amino compounds, methods of preparation and uses thereof. Tamiflu can be obtained from the said compounds. Multi-substituted chiral tetrahydropyrrolyl amine which can be used as intermediate compounds of medicament can also be produced by the said compounds.

摘要翻译： 手性氨基化合物，其制备方法及其应用。 可以从所述化合物获得达菲。 可以用作药物的中间体化合物的多取代手性四氢吡咯胺也可以由所述化合物制备。

公开(公告)号：US20130189843A1

公开(公告)日：2013-07-25

申请号：US13747825

申请日：2013-01-23

申请人： You Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah ,  Yufei Chen

发明人： You Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah ,  Yufei Chen

IPC分类号： H01L21/306

CPC分类号： H01L21/30625 ,  C09G1/02 ,  H01L21/31058

摘要： A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

摘要翻译： 用于平版化光致抗蚀剂的浆料包括磨料颗粒，氧化剂，表面活化化学品和溶剂。

公开(公告)号：US20130186850A1

公开(公告)日：2013-07-25

申请号：US13357535

申请日：2012-01-24

申请人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

发明人： You Wang ,  Chenhao Ge ,  Yufei Chen ,  Yuchun Wang ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： C09K13/00 ,  C09K13/02 ,  H05K3/26

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L23/53238 ,  H01L23/53257 ,  H01L2924/0002 ,  H05K3/045 ,  H05K3/107 ,  H01L2924/00

摘要： A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.

摘要翻译： 用于钴层或钴层上的导电层的化学机械的浆料包括磨料颗粒，用于Cu或Co离子表面的有机络合化合物，作为浆料的0.01-1.0重量％的Co腐蚀抑制剂，氧化剂， 和溶剂。 浆液的pH为7-12。

公开(公告)号：US08403226B2

公开(公告)日：2013-03-26

申请号：US12850720

申请日：2010-08-05

申请人： You Wang

发明人： You Wang

IPC分类号： G06K7/00 ,  G06K7/08 ,  G06K19/00 ,  H04M1/00 ,  H05K1/14

CPC分类号： G06K7/0021

摘要： An exemplary chip card holder for holding a chip card includes a base member, a card receiving frame and a cover. The card receiving frame is mounted on the base member and defines an accommodating space for receiving the chip card therein. The accommodating space has an inserting opening for inserting the chip card into and removing the chip card out from the accommodating space. The cover includes a resisting block protruding therefrom. The cover is detachably latched to the base member in such a way that the resisting block is aligned with the inserting opening and located adjacent to an end of the chip card to hold the chip card within the accommodating space.

摘要翻译： 用于保持芯片卡的示例性芯片卡保持器包括基座构件，卡片接收框架和盖子。 卡接收框架安装在基座构件上并且限定用于在其中接收芯片卡的容纳空间。 容纳空间具有插入开口，用于将芯片卡插入存放空间中并将其从芯片卡中取出。 盖子包括从其突出的抵抗块。 盖子可拆卸地锁定到基座构件上，使得抵抗块与插入口对准并且位于与芯片卡的一端相邻并且将芯片卡保持在容纳空间内。

公开(公告)号：US08248819B2

公开(公告)日：2012-08-21

申请号：US12768699

申请日：2010-04-27

申请人： You Wang

发明人： You Wang

IPC分类号： H05K7/14 ,  H05K7/18

CPC分类号： H04B1/3818 ,  H04B1/3816 ,  H05K7/1408

摘要： A chip card holder includes a main housing and a retaining cover. The main housing includes a chip card receiving portion for receiving a chip card. The main housing defines a slot adjacent to the chip card receiving portion. A locking portion is formed adjacent to the slot. The retaining cover is rotatably attached the main housing. The retaining cover includes a latching portion. The latching portion includes an angled bottom. The retaining cover is locked to the main housing by engagement of the locking portion and the latching portion, and the angled bottom of the latching portion is received in the slot.

摘要翻译： 芯片卡座包括主壳体和保持盖。 主壳体包括用于接收芯片卡的芯片卡接收部分。 主壳体限定与芯片卡接收部分相邻的槽。 锁定部分邻近狭槽形成。 保持盖可旋转地安装在主壳体上。 保持盖包括闩锁部分。 闩锁部分包括成角度的底部。 通过锁定部分和闩锁部分的接合将保持盖锁定到主壳体，并且闩锁部分的倾斜的底部被容纳在狭槽中。

公开(公告)号：US20100112903A1

公开(公告)日：2010-05-06

申请号：US12263237

申请日：2008-10-31

申请人： WEN-CHIANG TU ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

发明人： WEN-CHIANG TU ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

IPC分类号： B24B49/04 ,  B24B7/22 ,  B24B57/02

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

公开(公告)号：US20090120799A1

公开(公告)日：2009-05-14

申请号：US12332882

申请日：2008-12-11

申请人： Zhi-Wen Sun ,  Renren He ,  You Wang ,  Michael X. Yang

发明人： Zhi-Wen Sun ,  Renren He ,  You Wang ,  Michael X. Yang

IPC分类号： C25D3/38 ,  C25D5/50

CPC分类号： H01L21/76864 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877

摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.

摘要翻译： 本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。 该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。 在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。