Abstract:
In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
Abstract:
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
Abstract:
A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam.
Abstract:
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
Abstract:
Light sources are provided with enhanced low-frequency (e.g., near infrared) emission. Some disclosed embodiments include a filament and at least one re-radiator element. The filament heats the re-radiator element to a steady-state temperature that is at least one quarter of the filament's absolute temperature. As disclosed herein, the increased surface area provided by the re-radiator element provides enhanced IR radiation from the light source. Patterning or texturing of the surface can further increase the re-radiator element's surface area. Various shapes such as disks, collars, tubes are illustrated and can be combined to customize the spectral emission profile of the light source. Some specific embodiments employ a coating on the bulb as the re-radiator element. The coating can be positioned to occlude light from the filament or to augment light from the filament, depending on the particular application. The various re-radiator elements can be positioned inside or outside the bulb.
Abstract:
A radiation system employs magnetic field to move particle beams and radiation sources. The radiation system includes a source operable to produce a particle beam, a scanning magnet operable to scan the particle beam, and a target configured to be impinged by at least a portion of the scanned particle beam to produce radiation.
Abstract:
An inexpensive scanning irradiation device of a particle beam is obtained without using a rotating gantry. A first scanning electromagnet and a second scanning electromagnet, whose deflection surfaces of the particle beam are the same, and which bend the particle beam having an incident beam axis angle of approximately 45 degrees relative to a horizontal direction in reverse directions to each other; an electromagnet rotation driving mechanism which integrates the first and the second scanning electromagnets and rotates these scanning electromagnets around the incident beam axis; and a treatment bed are provided. The particle beam deflected by the first and the second scanning electromagnets can be obtained at a range of −45 degrees to +45 degrees in deflection angle from an incident beam axis direction.
Abstract:
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.
Abstract:
Disclosed is a method for ablating hyaluronan-based hydrogels with X-rays, the method comprising the steps of: (a) preparing hyaluronan-based hydrogels; and (b) performing X-ray irradiation to the hyaluronan-based hydrogels to induce a degradation of the hyaluronan-based hydrogels by a gel-to-sol transition during the X-ray irradiation. Disclosed is also a method for fabricating three-dimensional microchannels of hyaluronan hydrogels with a finely tunable X-ray ablation technique.
Abstract:
An extreme ultraviolet light system includes a drive laser system, an extreme ultraviolet light chamber including an extreme ultraviolet light collector and a target material dispenser including a target material outlet capable of outputting a plurality of portions of target material along a target material path, wherein the target material outlet is adjustable. The extreme ultraviolet light system further includes a drive laser steering device, a detection system including at least one detector directed to detect a reflection of the drive laser reflected from the first one of the plurality of portions of target material and a controller coupled to the target material dispenser, the detector system and the drive laser steering device. The controller includes logic for detecting a location of a first one of the plurality of portions of target material from a first light reflected from the first target material and logic for adjusting the target material dispenser outlet to output a subsequent one of the plurality of portions of target material to a waist of the focused drive laser. A method for generating an extreme ultraviolet light is also disclosed. A system and a method for optimizing an extreme ultraviolet light output is also disclosed.