Measuring method, apparatus and substrate

    公开(公告)号:US10151987B2

    公开(公告)日:2018-12-11

    申请号:US13306668

    申请日:2011-11-29

    摘要: A pattern formed on a substrate includes first and second sub-patterns positioned adjacent one another and having respective first and second periodicities. The pattern is observed to obtain a combined signal which includes a beat component having a third periodicity at a frequency lower than that of the first and second periodicities. A measurement of performance of the lithographic process is determined by reference to a phase of the beat component. Depending how the sub-patterns are formed, the performance parameter might be critical dimension (CD) or overlay, for example. For CD measurement, one of the sub-patterns may comprise marks each having of a portion sub-divided by product-like features. The measurement can be made using an existing alignment sensor of a lithographic apparatus. Sensitivity and accuracy of the measurement can be adjusted by selection of the first and second periodicities, and hence the third periodicity.

    MASK BLANK, PHASE SHIFT MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20180252995A1

    公开(公告)日:2018-09-06

    申请号:US15760265

    申请日:2016-09-08

    申请人: HOYA CORPORATION

    摘要: According to the present invention, provided is a mask blank (10), in which; a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A). CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Expression (1) 0.04×AS−0.06×AM>1   Expression (A)

    PHOTOMASK FOR OPTICAL ALIGNMENT AND OPTICAL ALIGNMENT METHOD

    公开(公告)号:US20180239239A1

    公开(公告)日:2018-08-23

    申请号:US15754502

    申请日:2015-10-12

    发明人: Bing HAN

    IPC分类号: G03F1/42 G02F1/1337 G03F7/20

    摘要: A photomask (2) for optical alignment and an optical alignment method. By aligning the tail ends of first light-transmission patterns (313) which form a first photomask figure (3), and aligning the front ends of second light-transmission patterns (413), which form a second photomask figure (4) in the photomask (2), the un-exposed or underexposed areas do not exist at the tail ends of first substrate units (11) and the front end of second substrate units (12) during the process of optical alignment, thereby the problem existed in the traditional optical alignment manufacture process, that the brightness of a display is not uniform due to existing unexposed or underexposed areas, is solved, meanwhile, the reduction of the distance between the first substrate units (11) and the second substrate units (12) on a substrate is facilitated, thereby the utilization rate of the substrate is improved.

    Extreme ultraviolet (EUV) pod having marks

    公开(公告)号:US09817306B2

    公开(公告)日:2017-11-14

    申请号:US14862334

    申请日:2015-09-23

    IPC分类号: G03F1/22 G03F1/42 G03F1/66

    CPC分类号: G03F1/22 G03F1/42 G03F1/66

    摘要: The present invention relates to an EUV pod having marks, which comprises a mask pod and one or more mark disposed on the mask pod. One or more sensor of a processing machine is used for detecting the one or more mark. By including the one or more mark, the surface roughness of one or more region of the mask pod detectable by the one or more sensor can be altered. The one or more sensor emits light to the mask pod, which reflects the light to the one or more sensor. The one or more sensor receives the reflection light from the mask pod and judges if the voltage generated by the reflection light falls within the reflection ranges of the mark. Thereby, whether the one or more sensor corresponds to the one or more make can be confirmed.

    Method of Determining Focus, Inspection Apparatus, Patterning Device, Substrate and Device Manufacturing Method

    公开(公告)号:US20170153554A1

    公开(公告)日:2017-06-01

    申请号:US15429952

    申请日:2017-02-10

    IPC分类号: G03F7/20 G03F1/42

    摘要: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

    ETCH VARIATION TOLERANT OPTIMIZATION

    公开(公告)号:US20170139320A1

    公开(公告)日:2017-05-18

    申请号:US15318940

    申请日:2016-12-14

    发明人: Xiaofeng LIU

    摘要: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus and for transferring the imaged portion of the design layout to the substrate by an etching process, which includes the following steps: determining a value of at least one evaluation point of the lithographic process for each of a plurality of variations of the etching process; computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, wherein the multi-variable cost function is a function of deviation from the determined values of the at least one evaluation point; and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a termination condition is satisfied. This method may reduce the need of repeated adjustment to the lithographic process when the etching process varies.