摘要:
A device includes a plurality of memory cells of a memory array, a sense amplifier of the memory array, and selection logic of the memory array. The sense amplifier is configured to sense at least one data value from at least one memory cell of the plurality of memory cells. The selection logic is configured to select between causing the sense amplifier to sense the at least one data value using a first sensing delay and causing the sense amplifier to sense the at least one data value using a second sensing delay. The second sensing delay is longer than the first sensing delay.
摘要:
An embodiment of a method for accessing a storage unit of a flash memory, performed by a control unit, is disclosed to include at least the following steps. A transaction is appended to a bad-column table each time a bad column of a block within the storage unit is inspected. It is determined whether a total number of the transactions within the bad-column table is odd when the control unit determines that the last column of the block is a regular column. A transaction is appended to the bad-column table to indicate that the last column of the block is a bad column when the control unit determines that the total number of the transactions within the bad-column table is odd.
摘要:
A memory includes input/output paths and electrical leads. Each of the input/output paths are coupled to separate electrical leads. The memory is configured to operate in a test architecture and an operating architecture. In the test architecture, logic enables a greatest number of input/output paths. In the operating architecture, the memory enables the same or fewer input/output paths. The method of selecting a configuration includes establishing an operating and a test architecture and testing the memory in its greater input/output configuration.
摘要:
ABIST apparatus with integrated directory compare logic functionality, and ABIST error detection functionality. The apparatus includes two subsystems NOR'ed together. The first subsystem is for bit-wise logically ANDing corresponding array valid bits and tag valid inputs, generating “0” for a match and “1” for a mis-match, and logically ORing the bit-wise result to generate a “1” hit if there are any bit-wise mismatches. The second subsystem further receives ABIST control logic as an input to either: (a). combine array valid bits tag valid inputs to produce valid output, or (b) compare array valid bits with tag valid inputs. The apparatus further includes logical NOR functionality for the outputs of the first and second subsystems.
摘要:
A semiconductor integrated circuit device is provided with a diagnosis circuit, which does not increase the delay of a logic element in normal operation. In a latch provided at the output of a memory or at the input of a logic stage, a signal selector is provided in the feedback loop of the latch. The selector is switched in correspondence with the operation mode, such that it transfers the feedback signal in normal operation, while it transfers the test signal in a test mode, in order to prevent the delay from increasing in the signal selector on the main path in normal operation.
摘要:
An interconnect structure is centered around a substrate having opposite first and second surfaces. Component contacts allocated to cells in the substrate, are provided over both substrate surfaces. Conductive leads extend over each surface in two different directions. The conductive leads are selectively connected to the component contacts. The interconnect structure includes a capability for programmability electrically connecting, or disconnecting, the conductive leads in a desired manner.
摘要:
An interconnect structure contains an interconnect substrate, multiple component contacts formed on the interconnect substrate for receipt of electronic components, and multiple conductive traces formed on the interconnect substrate. Each conductive trace is electrically connected to one of the component contacts. An IC having a group of parallel of conductive leads is mounted on the substrate. At least one of the conductive leads is divided into two or more segments. One or more of the conductive leads or segments are connected to corresponding conductive traces on the interconnect substrate. In one embodiment, the IC is a programmable chip having programmable elements for selectively connecting the conductive leads or segments, thereby enabling a user to interconnect selected conductive traces on the interconnect substrate to achieve a desired electrical function from the electronic components connected to the substrate. In another embodiment, the IC contains active devices for testing the IC's conductive leads, the conductive traces on the substrate, and/or the electronic components mounted on the component contacts.
摘要:
An interconnect structure contains a substrate, a layer of separate conductive leads extending over the substrate in one direction, and another layer of separate conductive leads extending over the substrate in another, substantially different, direction. At least one conductive lead in each of the layers of conductive leads is divided into at least two electrically separate conductive segments. A plurality of cells are formed in the substrate. Each cell has a number of bonding pads formed above the substrate region where the cell is situated for allowing integrated circuit chips and/or electronic components to be connected to the cells. Programmable elements, typically programmed by devices in the substrate, enable connections to be formed between selected ones of the conductive leads or segments, thus enabling the integrated circuit chips and electronic components to be electrically interconnected. Devices formed in the substrate typically allow testing of the various components connected to the substrate to determine their performance and to check the integrity of the connections formed between the conductive leads or segments.
摘要:
In a memory cell array of a semiconductor memory device, a plurality of detection circuits (14, 15, 20) are provided in correspondence with a plurality of columns. An output line (L) is provided in common to the detection circuits (14, 15 20). The output line (L) is provided with plural junction points (n1 to nn) to which detection results from the detection circuits (14, 15 20) are separately applied. Dividing transistors (T1 to Tn) are provided between the junction points (n1 to nn). During testing, the word lines (WL1 to WLn) are selected sequentially. Test results for the memory cells (MC1 to MC4) connected to the selected word line are outputted at the corresponding junction points (n1 to nn), respectively. Simultaneously, a dividing transistor corresponding to the selected word line is rendered non-conductive, the remaining dividing transistors being rendered conductive. As a result, the output line (L) is divided into two parts at a portion of the non-conductive transistor. Detection results outputted to the respective divided parts of the output line (L) are monitored and a portion at which a detection result is changed in each divided part is found out.
摘要:
A serial protocol register and an initialization counter are configured to initialize (program) a RAM array. The register is configured to receive, in serial format, an initial address to be loaded into the counter. Also, the register is configured to receive, in serial format, a series of machine states (data words), each to be stored in the RAM array. In addition, the register is configured to clock the counter following each received machine state. The counter is configured to develop a series of addresses, each for accessing the RAM array to store in the array a corresponding one of the machine states.