Abstract:
Read-write head flying height controlled through micro-actuator assembly. Flying height controlled using DC line and ground line. Lateral position controlled using them and AC line. Micro-actuator assembly operates through three terminals coupled with these lines. Head gimbal assembly contains micro-actuator assembly mechanically coupling to slider with read-write head. Actuator arm includes at least one head gimbal assembly. Actuator arm assembly includes at least one actuator arm. Voice coil actuator includes actuator assembly. Hard disk drive containing voice coil actuator. Electrical interface circuit includes ground port, DC port, and AC port, for micro-actuator assembly. Servo controller drives micro-actuator assembly to control flying height and lateral position, preferably including electrical interface circuit. Manufacturing head gimbal assembly, actuator arm, actuator assembly, voice coil actuator, and hard disk drive, and products of these manufacturing processes.
Abstract:
In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A capping layer is formed in-situ on the insulating interlayer by increasing a flow rate of an oxidizing gas included in the reaction gas so that the capping layer has a second thickness when the insulating interlayer is formed on the substrate to have a first thickness. The insulating structure dose not have an interface between the insulating interlayer and the capping layer so that the insulating interlayer is not subject to damage by a cleaning solution during a subsequent cleaning process, since the cleaning solution maynot permeate into the insulating structure. Additionally, leakage current is mitigated or eliminated between the insulating interlayer and the capping layer, thereby improving the reliability of a semiconductor device including the insulating structure.
Abstract:
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
Abstract:
A gamma voltage generator of a liquid crystal display (LCD) capable of removing residual images by compensating a gamma voltage. The gamma voltage generation apparatus adjusts the common voltage by the kickback voltage for the intermediate gray level, and tunes the gamma voltages other than the intermediate gray level gamma voltage. The adjustment of the gamma voltages other than the intermediate gray level gamma voltage is achieved in such a manner that the difference between the intermediate gray level kickback voltage and the kickback voltage at one of the gray levels other than the intermediate gray level is equal to half of the difference between the sum of the two inverted gamma voltages representing the intermediate gray level gamma voltages and the sum of the two inverted gamma voltages corresponding to the selected gray level.
Abstract:
An in-line system for fabricating a liquid crystal display includes a sealer coating unit for coating a sealer onto a first substrate with a plurality of liquid crystal display cell regions a liquid crystal injection unit for dropping a liquid crystal onto the first substrate coated with the sealer, and an assembly unit for assembling the first substrate with the second substrate, A sealer hardening unit hardens the sealer interposed between the first and the second substrate to thereby assemble the first and the second substrate with each other. A substrate cutting unit cuts the first and the second substrates along cutting lines through illuminating a laser beam along the cutting lines such that the first and the second substrates are severed into the liquid crystal display cell regions.
Abstract:
A shift register includes a plurality of stages to output a plurality of output signals, in sequence. Each of the stages includes a driving part and a discharging part. The driving part outputs an output signal of a present stage based on one of a start signal and an output signal of a previous stage, and a clock signal. The discharging part discharges the output signal of the present stage. The discharging part includes a discharge transistor and an auxiliary transistor. The discharge transistor has a gate electrode receiving an output signal of a next stage. The auxiliary transistor has a gate electrode receiving the output signal of the next stage. The auxiliary transistor is electrically connected in series to the discharge transistor. Therefore, the chance of a malfunction is decreased, and image display quality of the display device is improved.
Abstract:
For ODT (on-die termination) control within a memory module system, just one pin from the memory controller is used for sending command signals indicating an activated one of the memory devices. The activated memory device includes components that are turned on for generating the ODT control signal for controlling an ODT circuit of inactivated memory device(s). The components for generating an ODT control signal within the inactivated memory devices are turned off for minimized power consumption.
Abstract:
A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
Abstract:
A white organic light emitting diode (OLED) includes an emission layer between two electrodes. The emission layer comprises two or more kinds of compounds for the host and two or more kinds of compounds for the dopant that facilitate production of a white color. Among the two or more kinds of compounds for the host, at least one is a hole transporting material and the other is an electron transporting material. The white OLED has improved stability which increases its efficiency and life.