公开(公告)号：US20120045450A1

公开(公告)日：2012-02-23

申请号：US13215683

申请日：2011-08-23

Applicant: William M. Kavanaugh ,  Gregory M. Harrowe ,  Kirston Koths ,  Cheng Liu ,  Deborah L. Zimmerman

Inventor： William M. Kavanaugh ,  Gregory M. Harrowe ,  Kirston Koths ,  Cheng Liu ,  Deborah L. Zimmerman

IPC: A61K39/395 ,  A61P35/00

CPC classification number: A61K39/39558 ,  C07K16/243

Abstract: M-CSF antagonists are used to prepare compositions, including pharmaceutical compositions, for preventing or treating cancer metastasis and/or bone loss associated with cancer metastasis in a mammal.

Abstract translation: M-CSF拮抗剂用于制备用于预防或治疗与哺乳动物癌症转移相关的癌症转移和/或骨丢失的组合物，包括药物组合物。

公开(公告)号：US08095766B2

公开(公告)日：2012-01-10

申请号：US12098574

申请日：2008-04-07

Applicant: Tian Cheng Liu ,  Susan P Paice ,  Andrew J Schofield ,  Qi Ming Teng

Inventor： Tian Cheng Liu ,  Susan P Paice ,  Andrew J Schofield ,  Qi Ming Teng

IPC: G06F12/00 ,  G06F13/28

CPC classification number: G06F9/4488 ,  G06F12/0802

Abstract: A method and system for increasing a system's performance and achieving improved memory utilization by approximating the memory sizes that will be required for data objects that can be deserialized and constructed in a memory cache. The method and system may use accurate calculations or measurements of similar objects to calibrate the approximate memory sizes.

Abstract translation: 一种用于通过近似可以在存储器高速缓存中反序列化和构造的数据对象所需的存储器大小来增加系统性能并实现改进的存储器利用的方法和系统。 该方法和系统可以使用类似对象的精确计算或测量来校准大致的存储器大小。

公开(公告)号：US20110298072A1

公开(公告)日：2011-12-08

申请号：US12794101

申请日：2010-06-04

Applicant: Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

Inventor： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

Abstract translation: 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

公开(公告)号：US08063006B2

公开(公告)日：2011-11-22

申请号：US11436749

申请日：2006-05-18

Applicant: Chien Ching Chen ,  Wen Cheng Liu ,  Jing-Chiuan Shiue ,  Teng Yan Huo

Inventor： Chien Ching Chen ,  Wen Cheng Liu ,  Jing-Chiuan Shiue ,  Teng Yan Huo

IPC: C11D1/00

CPC classification number: C11D11/0047 ,  C11D7/3218 ,  C11D7/3281

Abstract: The invention relates to an aqueous cleaning composition for wafers with copper wires that have been treated by chemical mechanical planarization in an integrated circuit processing, comprising 0.1 to 15 wt % of a nitrogen-containing heterocyclic organic base, 0.1 to 35 wt % of an alcohol amine and water. Upon contact with copper-containing semiconductor wafers that have been treated by chemical mechanical planarization for an effective period of time, the aqueous cleaning composition can effectively remove residual contaminants from the surfaces of the wafers, and simultaneously provide the copper-containing semiconductor wafers with a better surface roughness.

Abstract translation: 本发明涉及在集成电路加工中通过化学机械平面化处理的具有铜线的晶片的水性清洁组合物，其包含0.1至15重量％的含氮杂环有机碱，0.1至35重量％的醇 胺和水。 在通过化学机械平面化处理有效时间的含铜半导体晶片接触之后，水性清洁组合物可以有效地从晶片表面去除残留的污染物，同时向含铜半导体晶片提供 更好的表面粗糙度。

公开(公告)号：US08058133B2

公开(公告)日：2011-11-15

申请号：US12273517

申请日：2008-11-18

Applicant: Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

Inventor： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

IPC: H01L21/336

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

Abstract: A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

Abstract translation: 制造金属氧化物半导体场效应晶体管的方法包括首先提供其上形成有栅极结构的衬底。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹槽。 另外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

公开(公告)号：US08014956B2

公开(公告)日：2011-09-06

申请号：US11617042

申请日：2006-12-28

Applicant: Yu-Ching Chang ,  Yu-Yu Lin ,  Shiu-Chieh Lan ,  Cheng-Tao Wu ,  Chung-Cheng Liu

Inventor： Yu-Ching Chang ,  Yu-Yu Lin ,  Shiu-Chieh Lan ,  Cheng-Tao Wu ,  Chung-Cheng Liu

IPC: G06F7/00

CPC classification number: C12N15/111 ,  C12N2310/14 ,  C12N2320/11 ,  C12N2330/10 ,  G06F19/16 ,  G06F19/18 ,  G06F19/22

Abstract: Disclosed are methods of identifying microRNA motifs or microRNA precursors for a target gene or a set of target genes. Also disclosed are related computer-readable media.

Abstract translation: 公开了鉴定靶基因或一组靶基因的微小RNA基序或微小RNA前体的方法。 还公开了相关的计算机可读介质。

公开(公告)号：US08001674B2

公开(公告)日：2011-08-23

申请号：US12127835

申请日：2008-05-28

Applicant: Kun Chen ,  Chin-Tsan Huang ,  Dong-Cheng Liu

Inventor： Kun Chen ,  Chin-Tsan Huang ,  Dong-Cheng Liu

IPC: B23P21/00

CPC classification number: B23P19/04 ,  Y10T29/53039 ,  Y10T29/53057 ,  Y10T29/53061 ,  Y10T29/53274

Abstract: An exemplary automatic disassembly machine is used for detaching a cover from a main body of a portable electronic device. The cover defines a hole therein. The automatic disassembly machine includes a holder, a mechanical hand, a power source, and a controller. The mechanical hand is fixed on the holder. The mechanical hand has an inserting element, and a positioning element. The inserting element is configured for inserting into the hole of the cover and lifting the cover up from the portable electronic device. The positioning element is configured for positioning the cover. The power source connects to the mechanical hand for driving the mechanical hand. The controller connects to the mechanical hand and the power source for respectively controlling the positioning element and the inserting element to detach the cover from the portable electronic device.

Abstract translation: 使用示例性的自动拆卸机器来从便携式电子设备的主体分离盖子。 盖在其中限定一个孔。 自动拆装机包括支架，机械手，电源和控制器。 机械手固定在支架上。 机械手具有插入元件和定位元件。 插入元件构造成用于插入到盖的孔中并将盖从便携式电子装置提起。 定位元件构造成用于定位盖。 电源连接到用于驱动机械手的机械手。 控制器连接到机械手和电源，用于分别控制定位元件和插入元件以将盖从便携式电子设备分离。

公开(公告)号：US07985653B2

公开(公告)日：2011-07-26

申请号：US12276419

申请日：2008-11-24

Applicant: Wen-Chieh Lee ,  Mou-Shiung Lin ,  Chien-Kang Chou ,  Yi-Cheng Liu ,  Chiu-Ming Chou ,  Jin-Yuan Lee

Inventor： Wen-Chieh Lee ,  Mou-Shiung Lin ,  Chien-Kang Chou ,  Yi-Cheng Liu ,  Chiu-Ming Chou ,  Jin-Yuan Lee

IPC: H01L21/20 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/4763 ,  H01L21/8238

CPC classification number: H01L23/3114 ,  H01L23/5227 ,  H01L23/525 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05624 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00

Abstract: A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing a second coil over said passivation layer and over said first coil. Said second coil may be deposited by forming a first metal layer over said passivation layer, forming a pattern defining layer over said first metal layer, a first opening in said pattern defining layer exposing said first metal layer, forming a second metal layer over said first metal layer exposed by said first opening, removing said pattern defining layer, and removing said first metal layer not under said second metal layer.

Abstract translation: 一种用于制造电路部件的方法包括提供半导体衬底，在所述半导体衬底上的第一线圈，在所述第一线圈上方的钝化层; 以及在所述钝化层上并在所述第一线圈上方沉积第二线圈。 所述第二线圈可以通过在所述钝化层上形成第一金属层而形成，在所述第一金属层上形成图案限定层，所述图案限定层中的第一开口暴露所述第一金属层，在所述第一金属层上形成第二金属层 由所述第一开口暴露的金属层，去除所述图案限定层，以及去除不在所述第二金属层下方的所述第一金属层。

公开(公告)号：US20110081766A1

公开(公告)日：2011-04-07

申请号：US12572833

申请日：2009-10-02

Applicant: Han-Chi Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Yuan-Hung Liu

Inventor： Han-Chi Liu ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Yuan-Hung Liu

IPC: H01L21/762

CPC classification number: H01L27/14683 ,  H01L21/2652 ,  H01L21/266 ,  H01L21/76232 ,  H01L27/14627 ,  H01L27/1463

Abstract: A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.

Abstract translation: 一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。 不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。 另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中 保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

公开(公告)号：US07918113B2

公开(公告)日：2011-04-05

申请号：US11047487

申请日：2005-02-01

Applicant: Che-Wen Liu ,  Chien-Cheng Liu

Inventor： Che-Wen Liu ,  Chien-Cheng Liu

IPC: E05B13/10

CPC classification number: E05B55/005 ,  Y10T70/542 ,  Y10T70/5442 ,  Y10T70/5796 ,  Y10T70/5823 ,  Y10T70/5832 ,  Y10T292/57

Abstract: A press-buckled lock having a press buckle is used so that the operation of locking and unlocking can be performed rapidly. By pressing the buckle, the door can be locked rapidly. When the inner handle is rotated, the press buckle is separated rapidly to unlock. Other than making the operation easy, the installation of the press buckle at the inner handle of a lock will reduce the manufacturing cost and cause the operation to be easy. Thereby the cost is reduced. By pressing the press buckle, a lock can locked rapidly; when rotating the inner handle or inserting a specific key into the lock core, the press buckle will separate rapidly so as to unlock the lock; thus, the press buckle in the lock has the effect of controlling the locking and unlocking operation rapidly.

Abstract translation: 使用具有压扣的压扣锁，能够快速地执行锁定和解锁操作。 通过按扣，门可以快速锁定。 当内手柄旋转时，压扣快速分离以解锁。 除了使操作变得容易之外，将锁扣安装在锁的内手柄上将降低制造成本并且使操作变得容易。 从而降低成本。 通过按压扣，锁可以快速锁定; 当旋转内手柄或将特定键插入锁芯时，压扣将快速分离，以解锁锁; 因此，锁中的按扣具有快速控制锁定和解锁操作的效果。