Abstract:
Methods of preparing graphene nano ribbons may include forming a graphene sheet on at least one surface of a substrate, forming a plasma mask having a nano pattern on the graphene sheet, and forming a nano pattern on the graphene sheet by plasma treating a stack structure on which the plasma mask is formed.
Abstract:
The present invention discloses a dispersant for carbon nanotubes having excellent dispersion ability and to a carbon nanotube composition including the dispersant. In the dispersant, the heads and tails of the dispersant are regioregularly arranged in one direction, and the structural properties of the dispersant are controlled such that the ratio of heads to tails is 1 or more, thereby effectively stabilizing and dispersing carbon nanotubes in various dispersion media, such as an organic solvent, water, a mixture thereof and the like, compared to conventional dispersants.
Abstract:
A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
Abstract:
Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.
Abstract:
A carbon nanotube (CNT) film having a transformed substrate structure and a manufacturing method thereof. The CNT film includes a transparent substrate, a plurality of three-dimensional (3D) structures formed distant from each other on the transparent substrate, and carbon nanotubes (CNTs) deposited on the transparent substrate where the plurality of 3D structures is not formed. The method includes forming a plurality of 3D structures distant from each other on a transparent substrate, and depositing a CNT solution on the substrate with the plurality of 3D structures formed thereon, wherein the CNT solution is deposited into a portion of the transparent substrate where the 3D structures are not formed. Thus, the deposition mechanism of the CNT solution is controlled to thereby increase the transparency of the CNT film and the electrical conductivity of an electrode including the CNT film.
Abstract:
Provided are a graphene sheet and a process of preparing the same. Particularly, a process of economically preparing a large-area graphene sheet having a desired thickness and a graphene sheet prepared by the process are provided.
Abstract:
Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.
Abstract:
A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.
Abstract:
A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.
Abstract:
A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.