公开(公告)号：US08669572B2

公开(公告)日：2014-03-11

申请号：US11149998

申请日：2005-06-10

Applicant: Michael Leung ,  James Ibbetson

Inventor： Michael Leung ,  James Ibbetson

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Adhesive-free assembly of the substrate and reflector components of a semiconductor die package is achieved by injection molding the reflector onto a surface of the substrate or by molding the reflector separate from the substrate and securing it in place on the substrate through deformation of a portion of the reflector. The reflector may be made reflective either by molding the reflector using a light scattering material or through the addition of a reflective element, such as a piece of foil material that is secured to the reflector. A variety of interchangeable reflective elements having different surface shapes, and thus different light reflecting properties, may be made.

Abstract translation: 半导体管芯封装的衬底和反射器部件的无粘合剂组装通过将反射器注射到衬底的表面上或通过将反射器与衬底分离成模并将其固定在衬底上的适当位置来实现， 的反射器。 反射器可以通过使用光散射材料模制反射器或通过添加反射元件（例如固定到反射器的箔片材料）来制成。 可以制造具有不同表面形状，因此具有不同光反射特性的各种可互换的反射元件。

公开(公告)号：US08617909B2

公开(公告)日：2013-12-31

申请号：US12384277

申请日：2009-04-01

Applicant: Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

Inventor： Max Batres ,  James Ibbetson ,  Ting Li ,  Adam W. Saxler

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2224/0401

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

公开(公告)号：US08558252B2

公开(公告)日：2013-10-15

申请号：US13219486

申请日：2011-08-26

Applicant: James Ibbetson ,  Bernd Keller ,  Ronan Letoquin ,  Matthew Donofrio ,  Michael Bergmann

Inventor： James Ibbetson ,  Bernd Keller ,  Ronan Letoquin ,  Matthew Donofrio ,  Michael Bergmann

IPC: H01L29/18 ,  H01L29/205 ,  H01L33/00 ,  H01L21/00

CPC classification number: H01L33/504 ,  H01L33/0095 ,  H01L2933/0041

Abstract: Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.

Abstract translation: 用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。 不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。 该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。 在一个实施例中，将基础波长转换材料施加到半导体器件。 一部分碱转换材料被去除。 在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。

公开(公告)号：US08410679B2

公开(公告)日：2013-04-02

申请号：US12887097

申请日：2010-09-21

Applicant: James Ibbetson ,  Peter S. Andrews

Inventor： James Ibbetson ,  Peter S. Andrews

IPC: H01J1/62 ,  H01J9/00

CPC classification number: H01L33/50 ,  F21K9/64 ,  H01L33/501 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0041 ,  H05B33/10 ,  H01L2924/00014

Abstract: An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.

Abstract translation: LED包括具有发光表面的芯片和在发光表面上的含磷光体材料的涂层。 荧光体颗粒被布置在发光表面的涂层内的密集堆积层中，并且使得发光表面与荧光体颗粒处于接触关系。

公开(公告)号：US20130003346A1

公开(公告)日：2013-01-03

申请号：US13536707

申请日：2012-06-28

Applicant: RONAN LETOQUIN ,  PETER GUSCHL ,  JAMES IBBETSON ,  ERIC TARSA ,  TAO TONG ,  ZONGJIE YUAN ,  BERND KELLER

Inventor： RONAN LETOQUIN ,  PETER GUSCHL ,  JAMES IBBETSON ,  ERIC TARSA ,  TAO TONG ,  ZONGJIE YUAN ,  BERND KELLER

IPC: F21V9/16 ,  F21V29/00 ,  F21V13/02

CPC classification number: H05B33/0803 ,  F21K9/232 ,  F21K9/64 ,  F21S8/033 ,  F21V3/04 ,  F21V23/008 ,  F21V23/023 ,  F21V29/75 ,  F21V29/773 ,  F21V29/89

Abstract: Solid state modules and fixtures comprising different combinations and arrangements of a light source, one or more wavelength conversion materials, thermally conductive connection adapters allowing dissipation of heat outside of the module, and a remote power supply unit. This arrangement allows for greater thermal efficiency and reliability while employing solid state lighting and providing emission patterns that are equivalent with ENERGY STAR® standards. Some embodiments additionally place compensation circuits, previously included with power supply units, on the optical element itself, remote from the power supply unit. Various embodiments of the invention may be used to address many of the difficulties associated with utilizing efficient solid state light sources such as LEDs in the fabrication of lamps or bulbs suitable for direct replacement of traditional incandescent bulbs or fixtures using bulbs.

Abstract translation: 固体模块和固定装置包括光源，一个或多个波长转换材料的不同组合和布置，允许在模块外部散热的导热连接适配器以及远程电源单元。 这种布置允许在采用固态照明并提供与ENERGYSTAR®标准相当的发射模式时具有更高的热效率和可靠性。 一些实施例另外将以前包括在电源单元中的补偿电路放置在远离电源单元的光学元件本身上。 可以使用本发明的各种实施例来解决与在制造适合于使用灯泡直接替代传统白炽灯泡或固定装置的灯泡或灯泡中使用有效的固态光源（例如LED）有关的许多困难。

公开(公告)号：US08329482B2

公开(公告)日：2012-12-11

申请号：US12771938

申请日：2010-04-30

Applicant: Zhimin Jamie Yao ,  James Ibbetson

Inventor： Zhimin Jamie Yao ,  James Ibbetson

IPC: H01L21/00

CPC classification number: H01L33/50 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/22 ,  H01L33/486 ,  H01L33/505 ,  H01L2224/16

Abstract: Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material. At least some of the light emitted from the LEDs passes through the capping wafer where at least some of the light is converted by the conversion material.

Abstract translation: 提供了用于发光二极管（LED）芯片的方法和装置。 在一种方法的一个实施例中，提供预成形的封盖晶片，封盖晶片包括转换材料。 制造包括多个LED的无引线接合LED晶片。 封盖晶片使用粘合剂结合到LED晶片。 在完成所有最终制造步骤后，LED芯片随后被分割。 封装晶片在制造期间为LED芯片提供了坚固的机械支撑，这在制造过程中提高了芯片的强度。 另外，封盖晶片可以包括集成转换材料，这简化了制造工艺。 在用于LED芯片晶片的一个可能的实施例中，提供了一个底座晶片以及安装在底座晶片上的多个LED倒装芯片。 此外，使用粘合剂将封盖晶片结合到LED，并且封盖晶片包括转换材料。 从LED发射的至少一些光通过封盖晶片，其中至少一些光被转换材料转化。

公开(公告)号：US08288942B2

公开(公告)日：2012-10-16

申请号：US11227667

申请日：2005-09-15

Applicant: James Ibbetson

Inventor： James Ibbetson

IPC: H01L33/00

CPC classification number: H01L33/507 ,  F21K9/68 ,  H01L33/20 ,  H01L33/32 ,  H01L33/54 ,  H01L2224/73265

Abstract: A white light emitting solid-state lamp is disclosed having an output of at least 75 lumens per watt at 20 milliamps drive current. The lamp includes a light emitting diode, an encapsulant, and a header. The diode includes a conductive silicon carbide substrate for electrical contact and a Group III nitride active portion on the silicon carbide substrate for generating desired frequency photons under the application of current across the diode. The header includes a reflective cup for supporting the diode and for providing electrical contact to the diode and to the active portion. The encapsulant includes a phosphor, present in at least portions of the encapsulant for generating responsive frequencies when the phosphor is excited by the frequencies emitted by the diode.

Abstract translation: 公开了一种白色发光固态灯，其在20毫安驱动电流下具有至少75流明/瓦特的输出。 灯包括发光二极管，密封剂和头。 二极管包括用于电接触的导电碳化硅衬底和碳化硅衬底上的III族氮化物活性部分，用于在跨过二极管的电流施加下产生期望的频率光子。 集管包括用于支撑二极管并用于提供与二极管和有源部分的电接触的反射杯。 密封剂包括存在于密封剂的至少部分中的荧光体，用于当荧光体被二极管发射的频率激发时产生响应频率。

公开(公告)号：US08217412B2

公开(公告)日：2012-07-10

申请号：US12883979

申请日：2010-09-16

Applicant: Thomas Yuan ,  Bernd Keller ,  James Ibbetson ,  Eric Tarsa ,  Gerald Negley

Inventor： Thomas Yuan ,  Bernd Keller ,  James Ibbetson ,  Eric Tarsa ,  Gerald Negley

IPC: H01L33/00

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/58 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/181 ,  H05B33/0821 ,  H05B33/0857 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

Abstract translation: 一种LED组件，包括安装在基座的平坦表面上的LED芯片的阵列，所述LED芯片能够响应于电信号而发光。 LED芯片包括以不同颜色的光发射的各个组，其中每个组以串联电路互连。 LED芯片中包含一个镜头。 其他实施例可以包括散热结构，其包括与底座一体并且被布置成散发来自LED芯片的热量。

公开(公告)号：US20120043563A1

公开(公告)日：2012-02-23

申请号：US13190094

申请日：2011-07-25

Applicant: James Ibbetson ,  Sten Heikman ,  Julio Garceran ,  George Brandes

Inventor： James Ibbetson ,  Sten Heikman ,  Julio Garceran ,  George Brandes

IPC: H01L27/15 ,  H01L33/08

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.

Abstract translation: 一种发光二极管芯片，包括基座，底座上的反射层，与基座相反的反射层上的绝缘层，以及绝缘层上的多个子LED。 每个子LED包括与子基座相邻的第一面和在子LED与绝缘层之间的第一面上的透明触点和相邻的子LED之间的电互连。

公开(公告)号：US20110187294A1

公开(公告)日：2011-08-04

申请号：US12699541

申请日：2010-02-03

Applicant: Michael John Bergmann ,  Daniel Carleton Driscoll ,  Ashonita Chavan ,  Pablo Cantu-Alejandro ,  James Ibbetson

Inventor： Michael John Bergmann ,  Daniel Carleton Driscoll ,  Ashonita Chavan ,  Pablo Cantu-Alejandro ,  James Ibbetson

IPC: H05B41/00 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/04 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

Abstract: A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.

Abstract translation: III族氮化物类发光二极管包括p型III族氮化物基半导体层，与p型III族氮化物基半导体层形成PN结的n型III族氮化物基半导体层，以及一组 在n型III族氮化物基半导体层上的III族氮化物基有源区。 有源区包括多个依次层叠的III族氮化物基阱，包括相应的阱层。 多个阱层包括具有第一厚度的第一阱层和具有第二厚度的第二阱层。 第二阱层位于P-N结与第一阱层之间，第二厚度大于第一厚度。