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    SUBSTRATE CARRIER FOR MOLDING ELECTRONIC DEVICES
    61.
    发明申请
    SUBSTRATE CARRIER FOR MOLDING ELECTRONIC DEVICES 有权
    用于模制电子设备的基板载体

    公开(公告)号：US20120013040A1

    公开(公告)日：2012-01-19

    申请号：US12836645

    申请日：2010-07-15

    Applicant: Teng Hock KUAH ,  See Yap ONG ,  Ji Yuan HAO ,  Kai WU ,  Ee Ling CHIW

    Inventor： Teng Hock KUAH ,  See Yap ONG ,  Ji Yuan HAO ,  Kai WU ,  Ee Ling CHIW

    IPC: B29C39/10

    CPC classification number: B29C45/14639 ,  B29C45/14065 ,  B29C45/14778 ,  B29C45/40 ,  B29L2011/00

    Abstract: A method of molding a substrate containing a plurality of electronic devices by providing a carrier comprising a frame which includes an adhesive film. The substrate is mounted onto the adhesive film of the carrier such that the frame surrounds the substrate. The carrier is placed in a mold such that the frame is located at a clamping area of the mold and the substrate is located at a molding area of the mold where molding cavities are located. The frame is clamped at the clamping area while the electronic devices are located in the molding cavities for molding with an encapsulant.

    Abstract translation: 一种通过提供包括包括粘合剂膜的框架的载体来模制包含多个电子装置的基板的方法。 将基板安装在载体的粘合膜上，使得框架围绕基板。 将载体放置在模具中，使得框架位于模具的夹紧区域，并且基板位于模制空腔所在的模具的模制区域。 框架被夹紧在夹紧区域，而电子设备位于模制空腔中以用密封剂成型。

    Method of depositing tungsten film with reduced resistivity and improved surface morphology
    63.
    发明授权
    Method of depositing tungsten film with reduced resistivity and improved surface morphology 失效
    沉积具有降低电阻率并改善表面形态的钨膜的方法

    公开(公告)号：US08071478B2

    公开(公告)日：2011-12-06

    申请号：US12637864

    申请日：2009-12-15

    Applicant: Kai Wu ,  Amit Khandelwal ,  Averginos V. Gelatos

    Inventor： Kai Wu ,  Amit Khandelwal ,  Averginos V. Gelatos

    IPC: H01L21/44

    CPC classification number: H01L21/76876 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/76861 ,  H01L21/76877

    Abstract: A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited.

    Abstract translation: 提供了一种控制钨膜的电阻率和形态的方法，包括：在第一沉积阶段，通过（i）引入连续流动的还原气体和脉冲流 将含钨化合物加入到处理室中，以沉积在基材表面上的钨，（ii）使还原气体流动，而不使含钨化合物流入室中以吹扫室，并重复步骤（i）至（ii） ），直到第一膜填充衬底表面中的通孔，增加处理室中的压力，并且在第一沉积阶段之后的第二沉积阶段期间，通过提供还原气体和钨的流动沉积体钨层的第二膜 包含化合物到处理室，直到沉积第二期望厚度。

    Solid-phase chelators and electronic biosensors
    64.
    发明申请
    Solid-phase chelators and electronic biosensors 有权
    固相螯合剂和电子生物传感器

    公开(公告)号：US20110159481A1

    公开(公告)日：2011-06-30

    申请号：US12655459

    申请日：2009-12-30

    Applicant: David J. Liu ,  Xing Su ,  Kai Wu

    Inventor： David J. Liu ,  Xing Su ,  Kai Wu

    IPC: C12Q1/68 ,  G01N33/50 ,  G01N27/26

    CPC classification number: C12Q1/48 ,  C12Q1/6837 ,  C12Q1/6869 ,  G01N27/4145 ,  G01N2333/9125 ,  C12Q2565/607 ,  C12Q2565/507 ,  C12Q2565/301

    Abstract: Methods for sequencing nucleic acids are presented. Sequencing is accomplished through the chemical amplification of the products of DNA synthesis and the detection of the chemically amplified products. In embodiments of the invention, a substrate is provided having a plurality of molecules of DNA to be sequenced attached and a plurality of molecules capable of chelating pyrophosphate ions attached, the DNA molecules to be sequenced are primed, and a next complementary nucleotide is incorporated and excised a plurality of times leading to the buildup of pyrophosphate ions locally around the DNA molecule to be sequenced. Pyrophosphate ions are captured by the substrate-attached chelators and electronically detected to determine the identity of the next complementary nucleic acid in the DNA molecule to be sequenced. Additionally, devices and methods are provided for detecting biomolecules through the detection of pyrophosphate ions.

    Abstract translation: 介绍了核酸测序方法。 通过化学扩增DNA合成产物和化学扩增产物的检测来完成测序。 在本发明的实施方案中，提供了具有多个待测序的DNA分子的底物和能够螯合连接的焦磷酸根离子的多个分子，引入待测序的DNA分子，并且掺入下一个互补核苷酸， 切除多次导致待测序的DNA分子局部周围的焦磷酸盐离子的积聚。 焦磷酸根离子被底物连接的螯合剂捕获并电子检测以确定待测序的DNA分子中下一个互补核酸的同一性。 另外，提供了通过检测焦磷酸根离子来检测生物分子的装置和方法。

    Atomic layer deposition of tungsten materials
    65.
    发明授权
    Atomic layer deposition of tungsten materials 有权
    原子层沉积钨材料

    公开(公告)号：US07964505B2

    公开(公告)日：2011-06-21

    申请号：US12121209

    申请日：2008-05-15

    Applicant: Amit Khandelwal ,  Madhu Moorthy ,  Avgerinog V. Gelatos ,  Kai Wu

    Inventor： Amit Khandelwal ,  Madhu Moorthy ,  Avgerinog V. Gelatos ,  Kai Wu

    IPC: H01L21/44

    CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.

    Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用诸如原子层沉积（ALD）的浸泡工艺和气相沉积工艺来提供具有显着改善的表面均匀性和生产水平生产量的钨膜。 在一个实施例中，提供了一种用于在衬底上形成含钨材料的方法，其包括将衬底定位在处理室内，其中衬底包含设置在其上的底层，将衬底依次暴露于钨前体和还原气体 在ALD工艺期间，在底层上沉积钨成核层，其中还原气体含有约40:1,100:1,500:1,800:1,1,000:1或更高的氢氢化物流速比， 以及在钨成核层上沉积钨体层。 还原气体含有氢化物化合物，例如乙硼烷，硅烷或乙硅烷。

    STRUCTURE AND METHOD FOR CONNECTING JUNCTION BOX TO SOLAR CELL MODULE
    66.
    发明申请
    STRUCTURE AND METHOD FOR CONNECTING JUNCTION BOX TO SOLAR CELL MODULE 审中-公开
    将接线盒连接到太阳能电池模块的结构和方法

    公开(公告)号：US20110079284A1

    公开(公告)日：2011-04-07

    申请号：US12896465

    申请日：2010-10-01

    Applicant: KAI WU

    Inventor： KAI WU

    IPC: H01L31/0203 ,  H01L31/0264 ,  H01L31/0272 ,  H05K13/00

    CPC classification number: H02S40/34 ,  Y10T29/49002

    Abstract: In a structure and method for connecting junction box to solar cell module, at least one support pin is embedded in the laminated layers of the solar cell module. The support pin includes at least a plug section, a support section and a stop section. The support section is embedded in the laminated layers of the solar cell module and can therefore provide support strength to the junction box. The stop section is pressed against an end surface of the solar cell module to enable a limiting and lateral supporting effect. The plug section is exposed from a layer of fixing sealant applied on the end surface of the solar cell module for plugging in and accordingly holding to a socket section of the junction box, protecting the junction box against separating from the solar cell module before the fixing sealant is fully cured.

    Abstract translation: 在将接线盒连接到太阳能电池模块的结构和方法中，至少一个支撑销嵌入在太阳能电池组件的叠层中。 支撑销至少包括插头部分，支撑部分和止挡部分。 支撑部分嵌入在太阳能电池模块的层压层中，因此可以为接线盒提供支撑强度。 止动部分被压靠在太阳能电池模块的端面上，以实现限制和横向支撑效果。 插头部分从施加在太阳能电池模块的端面上的固定密封剂层露出，用于插入并相应地保持到接线盒的插座部分，在固定之前保护接线盒免受与太阳能电池组件分离的影响 密封胶完全固化。

    BATTERY CELL OF A CYLINDRICAL LITHIUM ION BATTERY
    67.
    发明申请
    BATTERY CELL OF A CYLINDRICAL LITHIUM ION BATTERY 审中-公开
    圆柱形锂离子电池的电池

    公开(公告)号：US20100310926A1

    公开(公告)日：2010-12-09

    申请号：US12790248

    申请日：2010-05-28

    Applicant: Yue-li WANG ,  Kai WU ,  Yun-fei XU ,  Wei CHEN

    Inventor： Yue-li WANG ,  Kai WU ,  Yun-fei XU ,  Wei CHEN

    IPC: H01M6/08

    CPC classification number: H01M10/0587 ,  H01M2/26 ,  H01M4/70 ,  H01M10/0525

    Abstract: A battery cell of a cylindrical lithium ion battery includes an anode plate and a cathode plate wounded together with an insulating separator disposed between the anode plate and the cathode plate. The anode plate includes an anode current collector and an anode film formed on the anode current collector. The anode current collector is formed with an anode exposed portion without the anode film formed thereon. The anode exposed portion is soldered with a number of anode terminals. The cathode plate includes a cathode current collector and a cathode film formed on the cathode current collector. The cathode current collector is provided with a cathode exposed portion without the cathode film formed thereon. The cathode exposed portion is soldered with a number of cathode terminals. The anode terminals and the cathode terminals are disposed at two opposite sides of the battery cell.

    Abstract translation: 圆柱形锂离子电池的电池单元包括与设置在阳极板和阴极板之间的绝缘隔板一起缠绕的阳极板和阴极板。 阳极板包括形成在阳极集电器上的阳极集电器和阳极膜。 阳极集电体形成有阳极暴露部分，而不形成阳极膜。 阳极暴露部分被焊接有多个阳极端子。 阴极板包括形成在阴极集电体上的阴极集电体和阴极膜。 阴极集电体设有阴极暴露部分，而不形成阴极膜。 阴极暴露部分被焊接有多个阴极端子。 阳极端子和阴极端子设置在电池单元的两个相对侧。

    PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS
    70.
    发明申请
    PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS 审中-公开
    在铜接触应用中形成钴和钴硅材料的方法

    公开(公告)号：US20080268635A1

    公开(公告)日：2008-10-30

    申请号：US12111930

    申请日：2008-04-29

    Applicant: Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

    Inventor： Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

    IPC: H01L21/44

    CPC classification number: C23C16/18 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/42 ,  C23C16/4554 ,  C23C16/4586 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L29/665 ,  H01L29/78

    Abstract: Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

    Abstract translation: 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种在衬底上形成硅化钴材料的方法，其包括用至少一种预清洗方法处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积 在钴硅化物材料上的铜材料。 在另一个实施例中，在沉积铜材料之前，可以在钴硅化物材料上沉积金属钴材料。 在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。 铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。

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