公开(公告)号：US07566608B2

公开(公告)日：2009-07-28

申请号：US11285555

申请日：2005-11-22

Applicant: Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

Inventor： Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC: H01L21/8238

CPC classification number: H01L21/02205 ,  C23C16/405 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/11521 ,  H01L29/4933 ,  H01L29/517 ,  H01L29/78

Abstract: Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.

Abstract translation: 通过供应四（乙基甲基氨基）锆（[Zr（N（C 2 H 5）（CH 3）} 4]，TEMAZ）和四（乙基甲基氨基）铪（[Hf（N（C 2 H 5））的方式在半导体衬底上形成氧化锆铪薄膜 ）（CH 3）} 4]，TEMAH）。 TEMAZ和TEMAH可与氧化剂反应。 包括氧化铪的薄层可以用于栅极结构中的栅极绝缘层，电容器中的电介质层或闪存器件中的介电层。

公开(公告)号：US07151039B2

公开(公告)日：2006-12-19

申请号：US10632825

申请日：2003-08-04

Applicant: Yun-Jung Lee ,  In-Sung Park ,  Gi-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo

Inventor： Yun-Jung Lee ,  In-Sung Park ,  Gi-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo

IPC: H01L21/20 ,  H01L21/31

CPC classification number: H01L21/02181 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/3165 ,  H01L21/31683 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

Abstract: In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.

Abstract translation: 在使用原子层沉积形成氧化物层的方法和使用其形成使用其的半导体器件的电容器的方法中，将包含氨基官能团的前体引入到衬底上以化学吸附衬底上的一部分前体 。 然后，除去非化学吸附的前体。 此后，将氧化剂引入到基底上以使化学吸附的前体与氧化剂化学反应，以在基底上形成氧化物层。 沉积速率快​​，并且可以获得具有良好沉积特性的氧化物层。 此外，可以形成具有良好的阶梯覆盖和减小的图案加载速率的薄氧化膜。

公开(公告)号：US20060252281A1

公开(公告)日：2006-11-09

申请号：US11366453

申请日：2006-03-03

Applicant: Ki-Yeon Park ,  Kyoung-Ryul Yoon ,  Dae-Sik Choi ,  Han-Mei Choi ,  Seung-Hwan Lee

Inventor： Ki-Yeon Park ,  Kyoung-Ryul Yoon ,  Dae-Sik Choi ,  Han-Mei Choi ,  Seung-Hwan Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/022 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/318 ,  H01L29/513 ,  H01L29/7881

Abstract: A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods provided, a first conductive layer may be formed on a substrate. A native oxide layer formed on the first conductive layer may be removed. A surface of the first conductive layer may be nitrided so that the surface may be altered into a nitride layer. A composite dielectric layer including the first and/or second dielectric layers may be formed on the nitride layer. A second conductive layer may be formed on the composite dielectric layer. The first dielectric layer may include a material having a higher dielectric constant. The second dielectric layer may be capable of suppressing crystallization of the first dielectric layer.

公开(公告)号：US20060240679A1

公开(公告)日：2006-10-26

申请号：US11403935

申请日：2006-04-14

Applicant: Seung-Hwan Lee ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Young-Sun Kim

Inventor： Seung-Hwan Lee ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Young-Sun Kim

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02304 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31645 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

Abstract: A method of manufacturing a semiconductor device comprises forming a lower electrode on a substrate using a titanium chloride pulsed deposition (TPD) process, forming a high-k dielectric layer on the lower electrode, and forming an upper electrode on the dielectric layer using a TPD process. The method further comprises forming a reaction barrier layer between the upper or lower electrode and the dielectric layer using an atomic layer deposition (ALD) process. The upper electrode is preferably formed with a processing temperature between 350 and 500° C., and the dielectric layer preferably comprises zirconium oxide.

Abstract translation: 一种制造半导体器件的方法包括使用氯化钛脉冲沉积（TPD）工艺在衬底上形成下电极，在下电极上形成高k电介质层，并使用TPD在电介质层上形成上电极 处理。 该方法还包括使用原子层沉积（ALD）工艺在上电极和下电极与电介质层之间形成反应势垒层。 优选上述上电极的处理温度为350〜500℃，电介质层优选为氧化锆。

公开(公告)号：US20060084225A1

公开(公告)日：2006-04-20

申请号：US11291191

申请日：2005-12-01

Applicant: In-Sung Park ,  Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  Yun-Jung Lee

Inventor： In-Sung Park ,  Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  Yun-Jung Lee

IPC: H01L21/8242

CPC classification number: H01L21/022 ,  C23C16/54 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31608 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L21/3185 ,  H01L21/67207 ,  H01L27/0218 ,  H01L28/56

Abstract: In some embodiments, a multi-layer dielectric structure, such as a capacitor dielectric region, is formed by forming a first dielectric layer on a substrate according to a CVD process and forming a second dielectric layer directly on the first dielectric layer according to an ALD process. In further embodiments, a multi-layer dielectric structure is formed by forming a first dielectric layer on a substrate according to an ALD process and forming a second dielectric layer directly on the first dielectric layer according to a CVD process. The CVD-formed layers may comprise one selected from the group consisting of SiO2, Si3N3, Ta2O5, HfO2, ZrO2, TiO2, Y2O3, Pr2O3, La2O3, Nb2O5, SrTiO3 (STO), BaSrTiO3 (BST) and PbZrTiO3 (PZT). The ALD-formed layers may comprise one selected from the group consisting of SiO2, Si3N3, Al2O3, Ta2O5, HfO2, ZrO2, TiO2, Y2O3, Pr2O3, La2O3, Nb2O5, SrTiO3 (STO), BaSrTiO3 (BST) and PbZrTiO3 (PZT).

Abstract translation: 在一些实施例中，通过根据CVD工艺在衬底上形成第一电介质层并根据ALD在第一电介质层上直接形成第二电介质层来形成诸如电容器电介质区域的多层电介质结构 处理。 在另外的实施例中，通过根据ALD工艺在衬底上形成第一电介质层并根据CVD工艺在第一电介质层上直接形成第二电介质层来形成多层电介质结构。 CVD形成的层可以包括从由SiO 2，Si 3 N 3 N 3，Ta 2 O 3， O 2，HfO 2，ZrO 2，TiO 2，Y 2，N 2， 3 O 3，3/3，3，3，3，3，3，3，3，3， （STO），BaSrTiO 3（BST）和PbZrTiO 3（BST）3（S0） / SUB>（PZT）。 ALD形成的层可以包括从由SiO 2，Si 3 N 3 N 3，Al 2 O 3， 3，O 3，O 2 O 5，HfO 2，ZrO 2，N 2， ，TiO 2，Y 2 O 3，Pr 2 O 3，La Nb 2 O 3，SrTiO 3（STO），N 2 O 3， BaSrTiO 3（BST）和PbZrTiO 3 3（PZT）。

公开(公告)号：US20050081787A1

公开(公告)日：2005-04-21

申请号：US10951937

申请日：2004-09-28

Applicant: Ki-Vin Im ,  Sung-Tae Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  In-Sung Park ,  Eun-Ae Chung ,  Ki-Yeon Park ,  Seung-Hwan Lee

Inventor： Ki-Vin Im ,  Sung-Tae Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  In-Sung Park ,  Eun-Ae Chung ,  Ki-Yeon Park ,  Seung-Hwan Lee

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/45544

Abstract: Methods of supplying a source to a reactor include charging a gaseous source into a charging volume by selectively activating a source charger coupled between the charging volume and a source reservoir. The gaseous source is then supplied from the charging volume into a deposition process reactor by selectively activating a source supplier coupled between the charging volume and the reactor after the gaseous source in the charging volume attains a desired internal pressure. Apparatus for supplying a source and methods and apparatus for depositing an atomic layer are also provided.

Abstract translation: 向反应器供应源的方法包括通过选择性地启动耦合在充电容积和源储存器之间的源极充电器将气态源充电到充电容积中。 然后，在充电容积中的气体源达到期望的内部压力之后，通过选择性地启动耦合在充电容积和反应器之间的源供应器，将气态源从充电容积供应到沉积工艺反应器中。 还提供了用于提供源的装置和用于沉积原子层的方法和装置。

公开(公告)号：US06555394B2

公开(公告)日：2003-04-29

申请号：US09867109

申请日：2001-05-29

Applicant: Ki-yeon Park ,  Heung-soo Park ,  Young-wook Park

Inventor： Ki-yeon Park ,  Heung-soo Park ,  Young-wook Park

IPC: H01L2100

CPC classification number: H01L21/02356 ,  C23C16/405 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31604 ,  H01L21/31691

Abstract: Methods of forming Ta2O5 layers in a process chamber are disclosed. A Ta2O5 layer can be maintained at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer. At least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber is changed to increase the temperature of the Ta2O5 layer to about the temperature for crystallization.