公开(公告)号：US20200224309A1

公开(公告)日：2020-07-16

申请号：US16816078

申请日：2020-03-11

申请人： ASM IP Holding B.V.

发明人： Sonti Sreeram ,  John Tolle ,  Joe Margetis ,  Junwei Su

IPC分类号： C23C16/455

摘要： A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.

公开(公告)号：US10535516B2

公开(公告)日：2020-01-14

申请号：US15886225

申请日：2018-02-01

申请人： ASM IP Holding B.V.

发明人： David Kohen ,  Nupur Bhargava ,  John Tolle ,  Vijay D'Costa

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/165

摘要： A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.

公开(公告)号：US10373850B2

公开(公告)日：2019-08-06

申请号：US14645158

申请日：2015-03-11

申请人： ASM IP HOLDING B.V.

发明人： John Tolle ,  Eric R. Hill

IPC分类号： C23C16/46 ,  H01L21/67

摘要： A system for removing an oxide material from a surface of a substrate can include a substrate tray to receive the substrate, and a cooling body to receive the substrate tray. The system may include a first temperature control element configured to control a temperature of the substrate tray and a second temperature control element configured to control a temperature of the cooling body, where the first temperature control element and the second temperature control element can be independently controlled. A method for removing oxide material from a surface of a substrate can include providing the substrate on a substrate tray having heating elements, cooling the substrate by transferring heat from the substrate tray to a cooling body, depositing a halogen-containing material on the cooled substrate while the substrate is on the cooling body, and subsequently sublimating the halogen-containing material by heating the cooled substrate by transferring heat from the substrate tray to the substrate.

公开(公告)号：US10262859B2

公开(公告)日：2019-04-16

申请号：US15863340

申请日：2018-01-05

申请人： ASM IP Holding B.V.

发明人： Joe Margetis ,  John Tolle ,  Gregory Bartlett ,  Nupur Bhargava

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/24

摘要： A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

公开(公告)号：US20190027583A1

公开(公告)日：2019-01-24

申请号：US16000125

申请日：2018-06-05

申请人： ASM IP Holding B.V.

发明人： Joe Margetis ,  John Tolle

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L21/02 ,  H01L21/285

摘要： A method for depositing a Group IV semiconductor is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include, exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA metalorganic dopant precursor. The methods may further include depositing a Group IV semiconductor on a surface of the substrate. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20160314967A1

公开(公告)日：2016-10-27

申请号：US15203642

申请日：2016-07-06

申请人： ASM IP HOLDING, B.V.

发明人： John Tolle

IPC分类号： H01L21/02 ,  H01L31/18 ,  H01L29/165 ,  H01L31/0745

CPC分类号： H01L21/02535 ,  C30B25/183 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/161 ,  H01L29/165 ,  H01L31/0745 ,  H01L31/1812 ,  Y02E10/50

摘要： Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.

摘要翻译： 公开了使用锗烷作为前体形成锗 - 锡膜的方法。 示例性方法包括在外延化学气相沉积反应器中生长包括锗和锡的膜，其中锡前体与锗烷的比例小于0.1。 还公开了包括使用本文所述的方法形成的锗 - 锡膜的结构和装置。

公开(公告)号：US09299557B2

公开(公告)日：2016-03-29

申请号：US14220001

申请日：2014-03-19

申请人： ASM IP HOLDING B.V.

发明人： John Tolle ,  Matthew G. Goodman ,  Robert Michael Vyne ,  Eric R. Hill

IPC分类号： H01L21/02 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/311

CPC分类号： H01L21/02049 ,  B08B5/00 ,  B08B7/0014 ,  B08B7/0071 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/0217 ,  H01L21/02301 ,  H01L21/02348 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02636 ,  H01L21/02661 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/324

摘要： A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

公开(公告)号：US20150270122A1

公开(公告)日：2015-09-24

申请号：US14220001

申请日：2014-03-19

申请人： ASM IP Holding B.V.

发明人： John Tolle ,  Matthew G. Goodman ,  Robert Michael Vyne ,  Eric R. Hill

IPC分类号： H01L21/02 ,  H01L21/3205 ,  H01L21/324

CPC分类号： H01L21/02049 ,  B08B5/00 ,  B08B7/0014 ,  B08B7/0071 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/0217 ,  H01L21/02301 ,  H01L21/02348 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02636 ,  H01L21/02661 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/324

摘要： A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

摘要翻译： 用于集成电路制造的方法可以包括通过预清洁工艺去除氧化硅。 预清洁方法可以包括在第一反应室中在基材的表面上沉积含卤素的材料，并将具有含卤素材料的基材转移到第二反应室。 氧化硅材料可以通过升华第二反应室中的含卤物质从基板的表面去除。 诸如导电材料的目标材料随后可以沉积在第二反应室中的基板表面上。

公开(公告)号：US20150267295A1

公开(公告)日：2015-09-24

申请号：US14219879

申请日：2014-03-19

申请人： ASM IP Holding B.V.

发明人： Eric Hill ,  John Tolle ,  Matthew Goodman

IPC分类号： C23C16/458 ,  C23C16/455 ,  H05B6/10

CPC分类号： C23C16/4581 ,  C23C16/45504 ,  H05B6/105

摘要： A substrate tray, a susceptor assembly including a substrate tray, and a reactor including a substrate tray and/or susceptor assembly are disclosed. The substrate tray is configured to retain a substrate during processing and can be formed of a substantially non-reactive material. The substrate tray can be received by a susceptor, formed of another material, to form the susceptor assembly.

摘要翻译： 公开了一种基板托盘，包括基板托盘的基座组件和包括基板托盘和/或基座组件的反应器。 衬底托盘被配置为在加工过程中保持衬底并且可以由基本上不反应的材料形成。 衬底托盘可以由由另一种材料形成的基座接收，以形成基座组件。