Laser ablation for integrated circuit fabrication
    66.
    发明授权
    Laser ablation for integrated circuit fabrication 有权
    激光烧蚀用于集成电路制造

    公开(公告)号:US08419895B2

    公开(公告)日:2013-04-16

    申请号:US12788843

    申请日:2010-05-27

    IPC分类号: B32B38/10

    摘要: A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC) includes attaching the handler to the wafer using an adhesive comprising a polymer; performing edge processing to remove an excess portion of the adhesive from an edge of the handler and wafer; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer. A system for releasing a handler from a wafer, the wafer comprising an IC includes a handler attached to a wafer using an adhesive comprising a polymer; an edge processing module, the edge processing module configured to remove an excess portion of the adhesive from the edge of the handler and wafer; and a laser, the laser configured to ablate the adhesive through the handler.

    摘要翻译: 一种用于从晶片释放处理器的方法,包括集成电路(IC)的晶片包括使用包含聚合物的粘合剂将处理器附接到晶片; 执行边缘处理以从处理器和晶片的边缘去除多余的粘合剂部分; 使用激光器通过处理器烧蚀粘合剂,其中基于处理材料的透明度选择激光的波长; 并将处理器与晶片分离。 一种用于从晶片释放处理器的系统,包括IC的晶片包括使用包含聚合物的粘合剂附接到晶片的处理器; 边缘处理模块,所述边缘处理模块被配置为从所述处理器和晶片的边缘去除所述粘合剂的多余部分; 和激光器,激光器被配置为通过处理器消融粘合剂。