Abstract:
A semiconductor package for an electrical component which has a metal or metal alloy leadframe with first and second surface, which leadframe is adapted to have an electrical component connected thereto. The leadframe is bonded by means of a polymer to a copper or copper alloy base member. The leadframe is also bonded by means of a polymer to a copper or copper alloy cap member. The cap and base members have coated to their inside surfaces a metal or metal alloy. The coating improves the polymer bond between the leadframe and the base and cap members. The surface area of the base member is increased to transfer more heat from the silicon chip in the semiconductor package and to reduce the thermal stresses between the silicon chip and the base member.
Abstract:
The present invention is directed to an engineering ceramic product formed of a ceramic-glass-metal composite being strong, durable, formable into complex shapes and having good improved thermal conductivity.
Abstract:
The present invention is directed to components and the process of forming the components for housing semiconductor devices. The components are formed of a unique ceramic-glass-metal composite material comprising ceramic particles, metallic particles and a glass matrix with said ceramic and metallic particles dispersed throughout. Metal elements can be embedded into the material to enable simplified fabrication of devices such as semiconductor packaging.
Abstract:
The present invention relates to a process for maintaining the fine grain size of and providing excellent bend formability, hot ductility and strength properties to a copper-nickel-manganese alloy to be exposed to elevated temperatures. The process of the present invention includes a final cold working step during which the material to be fabricated into a desired article and/or exposed to the elevated temperatures has its thickness reduced by about 4% to about 30%, preferably from about 5% to about 25%. The alloys described herein have particular utility in brazed articles or assemblies.
Abstract:
The present invention is directed to a composite and process of forming the composite comprising metallic particles for enhancing the flow characteristics of said composite, a glass for adhering the composite together and the balance essentially ceramic particles. The composite has a matrix comprising the glass with the ceramic and metallic particles dispersed therein. The metallic particles are preferably present in the composite at a volume percentage so as to be discontinuously dispersed throughout.
Abstract:
The present invention is directed to a cermet material comprising a matrix of metal or alloy with ceramic particles distributed therein. The cermet includes a glass binder for bonding between the metal or alloy and the ceramic particles.
Abstract:
A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 7400 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.
Abstract:
An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb, of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol. A method for producing and using the same is also disclosed.
Abstract:
A water-soluble polymer is effective as a removal rate enhancer in a chemical mechanical polishing slurry to polish copper on semiconductor wafers or other copper laid structures, while keeping the etching rate low. The slurry may also include soft particles and certain metal chelating agents, or combinations thereof. The slurry can also comprise an abrasive particle, an organic acid, and an oxidizer.
Abstract:
A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.