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    SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION BEAM GENERATION
    61.
    发明申请
    SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION BEAM GENERATION 有权
    用于高密度宽度RIBBON离子束生成的小形状因子等离子体源

    公开(公告)号：US20110259269A1

    公开(公告)日：2011-10-27

    申请号：US12767125

    申请日：2010-04-26

    Applicant: Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

    Inventor： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

    IPC: C23C16/00

    CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H05H1/30

    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

    Abstract translation: 公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。 与常规ICP源相反，本公开描述了不是圆柱形的ICP源。 相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。 可以定义源的深度以最大化从天线到等离子体的能量传递。 在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。 离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

    TEMPERATURE CONTROLLED ION SOURCE
    62.
    发明申请
    TEMPERATURE CONTROLLED ION SOURCE 有权
    温度控制离子源

    公开(公告)号：US20110240878A1

    公开(公告)日：2011-10-06

    申请号：US12754381

    申请日：2010-04-05

    Applicant: Victor Benveniste ,  Bon-Woong Koo ,  Shardul Patel ,  Frank Sinclair

    Inventor： Victor Benveniste ,  Bon-Woong Koo ,  Shardul Patel ,  Frank Sinclair

    IPC: H01J27/02 ,  H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/002

    Abstract: An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.

    Abstract translation: 提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。 离子源包括具有限定内表面的壁的室。 衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。 在室壁的内表面的至少一部分和衬垫之间限定间隙。 第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。 第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

    Floating sheet production apparatus and method
    63.
    发明授权
    Floating sheet production apparatus and method 有权
    浮板生产设备及方法

    公开(公告)号：US07855087B2

    公开(公告)日：2010-12-21

    申请号：US12403206

    申请日：2009-03-12

    Applicant: Peter L. Kellerman ,  Frank Sinclair

    Inventor： Peter L. Kellerman ,  Frank Sinclair

    IPC: H01L21/00

    CPC classification number: H01L31/02 ,  C30B15/06 ,  C30B15/14 ,  C30B15/30 ,  C30B28/10 ,  C30B29/06

    Abstract: This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.

    Abstract translation: 该片材生产设备包括限定被配置为保持熔体的通道的容器。 熔体构造成从通道的第一点流到第二点。 冷却板靠近熔体设置并且被配置成在熔体上形成片材。 溢流道设置在通道的第二点。 该溢流道构造成将片材与熔体分离。

    Techniques for controlling a charged particle beam
    64.
    发明授权
    Techniques for controlling a charged particle beam 有权
    用于控制带电粒子束的技术

    公开(公告)号：US07821213B2

    公开(公告)日：2010-10-26

    申请号：US11865336

    申请日：2007-10-01

    Applicant: Piotr R. Lubicki ,  Russell J. Low ,  Stephen E. Krause ,  Frank Sinclair

    Inventor： Piotr R. Lubicki ,  Russell J. Low ,  Stephen E. Krause ,  Frank Sinclair

    IPC: H05H9/00

    CPC classification number: H05H7/04 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/04735 ,  H01J2237/304

    Abstract: Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.

    Abstract translation: 公开了用于控制带电粒子束的技术。 在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。 带电粒子加速/减速系统可以包括加速器柱，其可以包括多个电极。 多个电极可以具有带电粒子束可以通过的孔。 带电粒子加速/减速系统还可以包括电压分级系统。 电压分级系统可以包括第一流体储存器和第一流体回路。 第一流体回路可以具有连接到多个电极中的至少一个的导电连接器。 电压分级系统还可以包括第一流体回路中的流体。 流体可能具有电阻。

    END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS
    65.
    发明申请
    END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS 有权
    在离子植入系统中使用的电极的终止终止

    公开(公告)号：US20100252746A1

    公开(公告)日：2010-10-07

    申请号：US12418053

    申请日：2009-04-03

    Applicant: Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    Inventor： Frank Sinclair ,  Svetlana B. Radovanov ,  Kenneth H. Purser

    IPC: H01J3/14

    CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J2237/036 ,  H01J2237/15

    Abstract: An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.

    Abstract translation: 离子注入系统包括静电透镜。 静电透镜包括端子电极，接地电极和设置在它们之间的抑制电极。 离子束通过端子电极进入静电透镜并通过接地电极离开。 电极具有相关的静电等电位。 端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。 相应的端板具有对应于与特定电极相关联的静电等电位的形状，以便在光束通过静电透镜时保持光束的均匀性。

    TECHNIQUES FOR INDEPENDENTLY CONTROLLING DEFLECTION, DECELERATION AND FOCUS OF AN ION BEAM
    66.
    发明申请
    TECHNIQUES FOR INDEPENDENTLY CONTROLLING DEFLECTION, DECELERATION AND FOCUS OF AN ION BEAM 有权
    用于独立控制离子束的偏转，减弱和聚焦的技术

    公开(公告)号：US20100171042A1

    公开(公告)日：2010-07-08

    申请号：US12348091

    申请日：2009-01-02

    Applicant: Peter L. KELLERMAN ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

    Inventor： Peter L. KELLERMAN ,  Svetlana Radovanov ,  Frank Sinclair ,  Victor M. Benveniste

    IPC: H01J3/14

    CPC classification number: H01J37/1471 ,  H01J37/12 ,  H01J37/3171

    Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.

    Abstract translation: 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。

    Techniques for optical ion beam metrology
    67.
    发明授权
    Techniques for optical ion beam metrology 有权
    光离子束计量技术

    公开(公告)号：US07723697B2

    公开(公告)日：2010-05-25

    申请号：US11859219

    申请日：2007-09-21

    Applicant: Alexander S. Perel ,  Wilhelm Platow ,  Craig Chaney ,  Frank Sinclair ,  Tyler Rockwell

    Inventor： Alexander S. Perel ,  Wilhelm Platow ,  Craig Chaney ,  Frank Sinclair ,  Tyler Rockwell

    IPC: G01K11/00 ,  G21K5/02 ,  G21K5/10

    CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/2445 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2482 ,  H01J2237/30472

    Abstract: Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

    Abstract translation: 公开了提供光学离子束计量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于控制光束密度分布的装置，该装置可以包括一个或多个相机系统以捕获离子束的至少一个图像和耦合到一个或多个相机的控制系统 用于控制离子束的束密度分布的系统。 控制系统还可以包括剂量分析器，以在反馈环路和前馈环路中的至少一个中向一个或多个离子注入组件提供信息，以改善剂量和角度均匀性。

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