公开(公告)号：US06240777B1

公开(公告)日：2001-06-05

申请号：US09168394

申请日：1998-10-06

Applicant: Christoph Treutler ,  Herbert Goebel ,  Heribert Weber ,  Wolfgang Mueller ,  Steffen Schmidt ,  Klaus Heyers ,  Hans-Friedemann Kober ,  Werner Steiner

Inventor： Christoph Treutler ,  Herbert Goebel ,  Heribert Weber ,  Wolfgang Mueller ,  Steffen Schmidt ,  Klaus Heyers ,  Hans-Friedemann Kober ,  Werner Steiner

IPC: G01F168

CPC classification number: G01F1/6845 ,  G01F1/692

Abstract: A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.

Abstract translation: 传感器具有膜，至少一个电阻元件位于该膜上。 膜具有由多个部分层构成的膜层。 此外，提供由多个部分层组成的覆盖层。 膜和覆盖层的部分层被选择为使得膜和覆盖层中的两者都具有轻的拉伸应力，拉伸应力优选地大致相同。

公开(公告)号：US09123716B2

公开(公告)日：2015-09-01

申请号：US13719799

申请日：2012-12-19

Applicant: Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

Inventor： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC: H01L21/00 ,  H01L23/48 ,  H01L21/50 ,  H01L23/488 ,  H01L21/18 ,  B81C1/00 ,  H01L23/00

CPC classification number: H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

Abstract: A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

Abstract translation: 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US09048247B2

公开(公告)日：2015-06-02

申请号：US14306164

申请日：2014-06-16

Applicant: Heribert Weber

Inventor： Heribert Weber

IPC: H01L21/20 ,  H01L21/44 ,  H01L49/02

CPC classification number: H01L28/60 ,  B81B7/0006 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/66 ,  H01L28/10 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing a metal structure in a semiconductor substrate includes: producing an opening in the rear side of the semiconductor substrate in the area of the metal structure to be produced, which extends to the front side layer structure; filling the opening at least partially with a metal so that a metal structure is created which extends from the rear side of the semiconductor substrate to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure in such a way that the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, the metal structure acting as a lateral etch stop and the lattice structure being laterally undercut in the trench mask; and applying a sealing layer to the mask.

Abstract translation: 在半导体衬底中制造金属结构体的方法包括：在要制造的金属结构的区域中，在半导体衬底的后侧产生延伸到前侧层结构的开口; 至少部分地用金属填充开口，从而形成从半导体衬底的后侧延伸到前侧层结构的金属结构; 掩蔽用于沟槽工艺的半导体衬底的背面，用于暴露金属结构，使得沟槽掩模在与金属结构相邻的区域中包括晶格结构; 产生与金属结构相邻的隔离沟槽，金属结构用作横向蚀刻停止层，并且栅格结构在沟槽掩模中横向底切; 以及向所述掩模施加密封层。

公开(公告)号：US09035432B2

公开(公告)日：2015-05-19

申请号：US13915353

申请日：2013-06-11

Applicant: Jochen Reinmuth ,  Heribert Weber ,  Timo Schary ,  Yvonne Bergmann

Inventor： Jochen Reinmuth ,  Heribert Weber ,  Timo Schary ,  Yvonne Bergmann

IPC: H01L29/40 ,  H01L31/00 ,  H01L23/495 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

Abstract translation: 提供了具有带通孔电镀的半导体基板的部件的制造方法，所述贯通电镀被凹部包围，所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。 半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层，并且通孔电镀被由半导体衬底产生的环形结构包围。 围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。

公开(公告)号：US20140092458A1

公开(公告)日：2014-04-03

申请号：US13976301

申请日：2011-11-09

Applicant: Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Michael Krueger ,  Joerg Muchow ,  Christoph Friese

Inventor： Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Michael Krueger ,  Joerg Muchow ,  Christoph Friese

IPC: G02B7/182 ,  G02B26/12

CPC classification number: G02B7/1821 ,  G02B26/085 ,  G02B26/101 ,  G02B26/105 ,  G02B26/12

Abstract: A magnetically drivable micromirror having an outer frame, a coil former, and torsion springs, situated in a first plane, the torsion springs having an axis of rotation, and the coil former being connected to the outer frame by the torsion springs so as to be capable of rotational motion about the axis of rotation, having a mirror element that is situated in a second plane parallel to the first plane, the mirror element being connected to the coil former by an intermediate layer. A 2D scanner having a first magnetically drivable micromirror and a second drivable mirror, and to a method for producing a micromirror are also described.

Abstract translation: 具有位于第一平面中的外框架，线圈架和扭力弹簧的磁性可驱动微镜，所述扭转弹簧具有旋转轴线，并且所述线圈架通过所述扭转弹簧连接到所述外框架，从而为 能够围绕旋转轴线旋转运动，具有位于平行于第一平面的第二平面中的反射镜元件，镜元件通过中间层连接到线圈架。 还描述了具有第一磁性驱动微镜和第二可驱动镜的2D扫描仪以及用于制造微镜的方法。

公开(公告)号：US08647961B2

公开(公告)日：2014-02-11

申请号：US13198651

申请日：2011-08-04

Applicant: Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

Inventor： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC: H01L21/76

CPC classification number: H01L21/76898 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

Abstract translation: 描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。 此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

公开(公告)号：US08564078B2

公开(公告)日：2013-10-22

申请号：US13291350

申请日：2011-11-08

Applicant: Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

Inventor： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC: H01L29/84

CPC classification number: B81C1/00095 ,  H01L21/76898 ,  H01L23/481

Abstract: A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

Abstract translation: 提出了一种制造微机械部件的方法。 在本上下文中，在衬底中产生具有小于衬底厚度的深度的至少一个沟槽结构。 此外，在基板的第一面上制造或施加绝缘层和填充层。 填充层包括基本上填充沟槽结构的填充材料。 衬底的平面第一侧通过在填充层或绝缘层或衬底的平面内的随后的平坦化产生。 然后完成衬底的第二侧的进一步的平坦化。 还描述了根据该方法制造的微机械部件。

公开(公告)号：US08419957B2

公开(公告)日：2013-04-16

申请号：US12450659

申请日：2008-04-08

Applicant: Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

Inventor： Roland Scheuerer ,  Heribert Weber ,  Eckhard Graf

IPC: C03C15/00

CPC classification number: B81C1/00333 ,  B81B2203/033 ,  B81C1/0015 ,  B81C2201/0197

Abstract: A method for producing a micromechanical component is proposed, a trench structure being substantially completely filled up by a first filler layer, and a first mask layer being applied on the first filler layer, on which in turn a second filler layer and a second mask layer are applied. A micromechanical component is also proposed, the first filler layer filling up the trench structure of the micromechanical component and at the same time forming a movable sensor structure.

Abstract translation: 提出了一种用于制造微机械部件的方法，其中沟槽结构基本上被第一填充层完全填充，第一掩模层被施加在第一填料层上，第二掩模层又在第二填料层和第二掩模层 被应用。 还提出了微机械部件，第一填充层填充微机械部件的沟槽结构，同时形成可移动的传感器结构。

公开(公告)号：US08207585B2

公开(公告)日：2012-06-26

申请号：US12300544

申请日：2007-04-03

Applicant: Roman Schlosser ,  Heribert Weber ,  Christoph Schelling

Inventor： Roman Schlosser ,  Heribert Weber ,  Christoph Schelling

IPC: H01L29/84

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  H04R19/04 ,  Y10T428/24802

Abstract: A method is provided for producing a micromechanical component and a micromechanical component is provided, particularly a microphone, a micro-loudspeaker or a pressure sensor (an absolute pressure sensor or a relative pressure sensor) having a substrate and having a diaphragm pattern, for the production of the diaphragm pattern, process steps being provided that are compatible only with a circuit that is monolithically integrated into or on the substrate, a sacrificial pattern applied onto the substrate being removed for the production of the diaphragm pattern.

Abstract translation: 提供了一种用于制造微机械部件并提供微机械部件的方法，特别是麦克风，具有基板并具有光阑图案的微型扬声器或压力传感器（绝对压力传感器或相对压力传感器），用于 膜片图案的生产，仅提供与单片集成到基板中或基板上的电路相兼容的工艺步骤，施加到基板上的牺牲图案被去除以用于生产隔膜图案。

公开(公告)号：US08181522B2

公开(公告)日：2012-05-22

申请号：US12254113

申请日：2008-10-20

Applicant: Roland Scheuerer ,  Heribert Weber

Inventor： Roland Scheuerer ,  Heribert Weber

IPC: G01P15/125

CPC classification number: G01P15/0802 ,  G01P15/125

Abstract: An acceleration sensor having a mass which is movably supported outside its center of gravity, first electrodes on the mass and second electrodes located at a distance therefrom forming a capacitive sensor in order to determine a change in position of the mass as a function of time. At least one spring element which generates a restoring force when the mass is deflected from its neutral position is provided on the side of the mass facing the capacitive sensor. The mass may be obtained by being exposed from a material layer, and the mass is surrounded, at least at its side faces, by this material.

Abstract translation: 一种加速度传感器，其具有可移动地支撑在其重心外部的质量，质量上的第一电极和距离形成电容传感器的距离之外的第二电极，以便确定作为时间的函数的质量位置的变化。 当质量从其中立位置偏转时产生恢复力的至少一个弹簧元件设置在面向电容传感器的物体侧。 质量可以通过从材料层暴露而获得，并且质量至少在其侧面被该材料包围。