公开(公告)号：US09601205B2

公开(公告)日：2017-03-21

申请号：US14297093

申请日：2014-06-05

申请人： Younggeon Yoo ,  Junjin Kong ,  Hong Rak Son

发明人： Younggeon Yoo ,  Junjin Kong ,  Hong Rak Son

IPC分类号： G06F12/02 ,  G11C16/10 ,  G06F11/10 ,  G11C11/56 ,  G11C16/04

CPC分类号： G11C16/10 ,  G06F11/1072 ,  G11C11/5628 ,  G11C16/0483

摘要： A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes dividing write data into a plurality of page data groups, each page data group including multiple bits of data; encoding the divided page data groups using different binary codes, respectively; mapping the encoded page data groups; programming, in first memory cells connected to one word line, programming states to which binary values of each of the mapped encoded page data groups are mapped, such that, the plurality of page data groups correspond respectively to a plurality of read voltage levels, and for each of the plurality of page data groups, the page data group can be read by performing a single read operation on the first memory cells using the read voltage level corresponding to the page data group.

公开(公告)号：US20160267004A1

公开(公告)日：2016-09-15

申请号：US15064185

申请日：2016-03-08

申请人： AMITAI PERLSTEIN ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

发明人： AMITAI PERLSTEIN ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205

摘要： A storage device is provided as follows. A nonvolatile memory device includes blocks, each block having sub-blocks erased independently. A memory controller performs a garbage collection operation on the nonvolatile memory device by selecting a garbage collection victim sub-block among the sub-blocks and erasing the selected garbage collection victim sub-block to generate a free sub-block. The memory controller selects the garbage collection victim sub-block using valid page information of each sub-block and valid page information of memory cells adjacent to each sub-block.

摘要翻译： 存储装置如下提供。 非易失性存储器件包括块，每个块具有独立擦除的子块。 存储器控制器通过选择子块中的垃圾收集受害者子块并擦除所选择的垃圾收集受害者子块以产生空闲子块来对非易失性存储器件执行垃圾回收操作。 存储器控制器使用每个子块的有效页面信息和与每个子块相邻的存储器单元的有效页面信息来选择垃圾回收受害者子块。

公开(公告)号：US09390001B2

公开(公告)日：2016-07-12

申请号：US13938273

申请日：2013-07-10

申请人： Eun Chu Oh ,  Jongha Kim ,  Junjin Kong

发明人： Eun Chu Oh ,  Jongha Kim ,  Junjin Kong

IPC分类号： G06F12/02 ,  G11C16/34 ,  G11C16/04

CPC分类号： G11C16/16 ,  G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205 ,  G11C11/5671 ,  G11C16/0416 ,  G11C16/0466 ,  G11C16/3445

摘要： An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.

摘要翻译： 非易失性存储器件的擦除方法包括设置擦除模式，以及根据所设置的擦除模式执行正常擦除操作和快速擦除操作之一。 执行正常擦除操作以将存储器单元的阈值电压设置为低于第一擦除验证电平的擦除状态。 执行快速擦除操作以将存储器单元的阈值电压设置为低于第二擦除验证电平的伪擦除状态。 第二擦除验证级别高于第一擦除验证级别。

公开(公告)号：US09355701B2

公开(公告)日：2016-05-31

申请号：US14179614

申请日：2014-02-13

申请人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

发明人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

IPC分类号： G11C11/16 ,  G11C11/22 ,  G11C13/00 ,  G11C29/04 ,  G11C7/10

CPC分类号： G11C11/1675 ,  G11C7/1006 ,  G11C11/2275 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2029/0411

摘要： A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.

摘要翻译： 提供了一种非易失性存储器件的数据写入方法，包括接收要存储在所选存储器单元中的写数据; 读取存储在所选存储单元中的数据; 根据多个数据调制方式处理写入数据以产生多个调制数据值; 当选择的存储单元写入写入数据和多个调制数据值时，计算翻转位数和切换位数，每个翻转位指示所选存储单元的逻辑值相反，并且每个开关位 指示所选存储单元的逻辑值从第一逻辑值切换到第二逻辑值; 以及根据计算翻转位数和切换位数来选择写入数据和多个调制数据值之一。

公开(公告)号：US09311181B2

公开(公告)日：2016-04-12

申请号：US14071771

申请日：2013-11-05

申请人： Kijun Lee ,  Junjin Kong ,  Hong Rak Son ,  Sejin Lim

发明人： Kijun Lee ,  Junjin Kong ,  Hong Rak Son ,  Sejin Lim

IPC分类号： G06F11/10 ,  G06F11/14 ,  G06F12/08 ,  H03M13/09 ,  H03M13/29

CPC分类号： G06F11/1048 ,  G06F11/1076 ,  G06F11/1435 ,  G06F12/0804 ,  G06F12/0868 ,  H03M13/09 ,  H03M13/2942

摘要： A partial data changing method of a memory controller includes receiving a request to change partial data from a host; detecting an error of old data, the old data being partial data read from a memory device using an error detection code; if the old data is not erroneous, calculating a data difference between new data provided from the host and the old data, and calculating a new parity using the data difference and an old parity read from the memory device; and storing the new data and the new parity at the memory device.

摘要翻译： 存储器控制器的部分数据改变方法包括从主机接收改变部分数据的请求; 检测旧数据的错误，旧数据是使用错误检测码从存储装置读取的部分数据; 如果旧数据不是错误的，则计算从主机提供的新数据与旧数据之间的数据差异，并且使用从存储器件读取的数据差和旧奇偶校验来计算新奇偶校验; 以及将新数据和新奇偶校验存储在存储器件中。

公开(公告)号：US08964481B2

公开(公告)日：2015-02-24

申请号：US14014504

申请日：2013-08-30

申请人： Eun Chu Oh ,  Junjin Kong

发明人： Eun Chu Oh ,  Junjin Kong

IPC分类号： G11C16/04 ,  G11C16/16 ,  G11C16/34 ,  H01L27/115

CPC分类号： G06F12/0246 ,  G06F2212/7205 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/16 ,  G11C16/3418 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

摘要： A nonvolatile memory device includes a memory block, a row decoder, a voltage generator and control logic. The memory block includes memory cells stacked in a direction intersecting a substrate, the memory block being divided into sub-blocks configured to be erased independently. The row decoder is configured to select the memory block by a sub-block unit. The voltage generator is configured to generate an erase word line voltage to be provided to a first word line of a selected sub-block of the sub-blocks and a cut-off voltage, higher than the erase word line voltage, to be provided to a second word line of the selected sub-block during an erase operation. The control logic is configured to control the row decoder and the voltage generator to perform an erase operation on the selected sub-block.

摘要翻译： 非易失性存储器件包括存储器块，行解码器，电压发生器和控制逻辑。 存储块包括在与衬底相交的方向上堆叠的存储单元，该存储块被分成被独立地擦除的子块。 行解码器被配置为通过子块单元选择存储块。 电压发生器被配置为产生要提供给子块的所选子块的第一字线的擦除字线电压和高于擦除字线电压的截止电压，以提供给 在擦除操作期间所选子块的第二字线。 控制逻辑被配置为控制行解码器和电压发生器对所选择的子块执行擦除操作。

公开(公告)号：US08811080B2

公开(公告)日：2014-08-19

申请号：US13236176

申请日：2011-09-19

申请人： Yongjune Kim ,  Hong Rak Son ,  Seonghyeog Choi ,  Junjin Kong

发明人： Yongjune Kim ,  Hong Rak Son ,  Seonghyeog Choi ,  Junjin Kong

IPC分类号： G11C11/06

CPC分类号： G11C16/10 ,  G11C16/0483 ,  H01L27/1157 ,  H01L27/11582

摘要： Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.

摘要翻译： 提供一种闪速存储器系统及其字线交错方法。 闪存系统包括存储单元阵列和字线交错逻辑。 存储单元阵列连接到多个字线。 字线（WL）交织逻辑对与至少两个不同字线对应的WL数据和包括交错数据的编程数据执行对存储单元阵列的交织操作。

公开(公告)号：US08700974B2

公开(公告)日：2014-04-15

申请号：US13616168

申请日：2012-09-14

申请人： Jungsoo Chung ,  Hong Rak Son ,  Junjin Kong

发明人： Jungsoo Chung ,  Hong Rak Son ,  Junjin Kong

IPC分类号： G11C29/00

CPC分类号： G06F11/1008 ,  G06F12/0238 ,  G06F2212/1032 ,  G06F2212/7202 ,  G06F2212/7208 ,  G11C7/1006

摘要： In a memory system, a memory controller includes a randomizer and a seed controller. The seed controller provides a seed to the randomizer and includes; a first register block performing a first cyclic shift operation using a first parameter related to the nonvolatile memory device, a second register block performing a second cyclic shift operation using a second parameter related to the nonvolatile memory device, and a seed generating block generating the seed from the first and second cyclic shift results.

摘要翻译： 在存储器系统中，存储器控制器包括随机化器和种子控制器。 种子控制器为随机发生器提供种子，包括; 使用与非易失性存储器件相关的第一参数执行第一循环移位操作的第一寄存器块，使用与非易失性存储器件相关的第二参数执行第二循环移位操作的第二寄存器块，以及生成种子的种子生成块 从第一和第二循环移位结果。

公开(公告)号：US08635512B2

公开(公告)日：2014-01-21

申请号：US13110395

申请日：2011-05-18

申请人： Kijun Lee ,  Hong Rak Son ,  Junjin Kong

发明人： Kijun Lee ,  Hong Rak Son ,  Junjin Kong

IPC分类号： H03M13/00 ,  G06F11/00 ,  G08C25/00 ,  G11B27/00

CPC分类号： H03M13/2951 ,  G06F11/1008 ,  H03M13/2948

摘要： A method of iteratively decoding data transferred through a channel is provided. The method may include iteratively decoding each sector of 1 to N sectors of the data in continuous succession until all N sectors are decoded, wherein upon determination of successful completion of iterative decoding corresponding to a current sector of the N sectors, immediately initiating iterative decoding a next sector of the N sectors.

摘要翻译： 提供了一种迭代地解码通过信道传送的数据的方法。 该方法可以包括以连续顺序迭代地解码数据的1至N个扇区的每个扇区，直到所有N个扇区被解码，其中在确定对应于N个扇区的当前扇区的迭代解码的成功完成时，立即启动迭代解码 N部门的下一个部门。

公开(公告)号：US20120254680A1

公开(公告)日：2012-10-04

申请号：US13431426

申请日：2012-03-27

申请人： Eun Chu Oh ,  KyoungLae Cho ,  Mankeun Seo ,  Junjin Kong

发明人： Eun Chu Oh ,  KyoungLae Cho ,  Mankeun Seo ,  Junjin Kong

IPC分类号： G11C29/08 ,  G06F11/26

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G06F11/1044 ,  G06F11/1048 ,  G06F11/1072 ,  G11C5/02 ,  G11C5/025 ,  G11C29/70 ,  G11C29/82 ,  G11C29/883 ,  H01L27/0688 ,  H01L27/11514 ,  H01L27/11521 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/281

摘要： Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.

摘要翻译： 示例性实施例涉及非易失性存储器件的不良区域管理方法。 非易失性存储器件可以包括多个存储器块，并且每个块可以包含堆叠在衬底上的存储器层。 根据示例实施例，一种方法包括访问存储器块之一，判断所访问的存储器块是否包括至少一个包含坏存储器单元的存储器层。 如果检测到不良存储器单元，则该方法还可以包括配置存储器件以将所访问的存储器块的至少一个存储器层视为不良区域。