公开(公告)号：US09355701B2

公开(公告)日：2016-05-31

申请号：US14179614

申请日：2014-02-13

申请人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

发明人： Eun Chu Oh ,  Junjin Kong ,  Younggeon Yoo ,  Kijun Lee

IPC分类号： G11C11/16 ,  G11C11/22 ,  G11C13/00 ,  G11C29/04 ,  G11C7/10

CPC分类号： G11C11/1675 ,  G11C7/1006 ,  G11C11/2275 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2029/0411

摘要： A data write method of a nonvolatile memory device is provided which includes receiving write data to be stored in selected memory cells; reading data stored in the selected memory cells; processing the write data according to a plurality of data modulation manners to generate a plurality of modulated data values; calculating the number of flip bits and the number of switching bits when the write data and the plurality of modulated data values are overwritten on the selected memory cells, each flip bit indicating that a logical value of a selected memory cell is reversed and each switching bit indicating that a logical value of a selected memory cell is switched from a first logical value to a second logical value; and selecting one of the write data and the plurality of modulated data values according to calculating the number of flip bits and the number of switching bits.

摘要翻译： 提供了一种非易失性存储器件的数据写入方法，包括接收要存储在所选存储器单元中的写数据; 读取存储在所选存储单元中的数据; 根据多个数据调制方式处理写入数据以产生多个调制数据值; 当选择的存储单元写入写入数据和多个调制数据值时，计算翻转位数和切换位数，每个翻转位指示所选存储单元的逻辑值相反，并且每个开关位 指示所选存储单元的逻辑值从第一逻辑值切换到第二逻辑值; 以及根据计算翻转位数和切换位数来选择写入数据和多个调制数据值之一。

公开(公告)号：US09274721B2

公开(公告)日：2016-03-01

申请号：US14206269

申请日：2014-03-12

申请人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son ,  Younggeon Yoo

发明人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son ,  Younggeon Yoo

IPC分类号： G06F3/06

CPC分类号： G06F3/0655 ,  G06F3/0604 ,  G06F3/0679 ,  G11C7/1006 ,  G11C7/14 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/004 ,  G11C16/26 ,  G11C2013/0054

摘要： A data management method of a nonvolatile memory device which includes a data cell area and a reference cell area includes selecting shared data from write data input to the memory device; generating reference data based on the shared data; and storing the write data in the data cell area and a first reference area of the reference cell area; and storing the reference data in a second reference area of the reference cell area.

摘要翻译： 包括数据单元区域和参考单元区域的非易失性存储器件的数据管理方法包括从输入到存储器件的写入数据中选择共享数据; 基于共享数据生成参考数据; 并将写入数据存储在数据单元区域和参考单元区域的第一参考区域中; 并将参考数据存储在参考小区区域的第二参考区域中。

公开(公告)号：US09437310B2

公开(公告)日：2016-09-06

申请号：US14827930

申请日：2015-08-17

申请人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

发明人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

IPC分类号： G11C16/10 ,  G11C16/16 ,  G11C11/56 ,  G11C16/34 ,  G11C16/26

CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C16/26 ,  G11C16/3468

摘要： A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.

摘要翻译： 一种操作包括包括存储器块的非易失性存储器的存储器系统的方法和包括擦除控制单元的存储器控​​制器，包括执行预读取连接到所述存储器块的选定字线的多个存储器单元，产生关断 基于预读取结果的单元计数，通过擦除控制单元的操作，将关闭单元计数与参考值进行比较以产生比较结果，以及通过非易失性存储器的操作来改变基于比较结果的擦除操作条件 存储器，并根据改变的擦除操作条件擦除存储器块。

公开(公告)号：US09135111B2

公开(公告)日：2015-09-15

申请号：US13431426

申请日：2012-03-27

申请人： Eun Chu Oh ,  KyoungLae Cho ,  Mankeun Seo ,  Junjin Kong

发明人： Eun Chu Oh ,  KyoungLae Cho ,  Mankeun Seo ,  Junjin Kong

IPC分类号： G11C29/00 ,  G06F11/00 ,  G11C11/34 ,  G11C8/00 ,  G06F11/10 ,  G11C5/02 ,  H01L27/115 ,  H01L27/06 ,  H01L27/28

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G06F11/1044 ,  G06F11/1048 ,  G06F11/1072 ,  G11C5/02 ,  G11C5/025 ,  G11C29/70 ,  G11C29/82 ,  G11C29/883 ,  H01L27/0688 ,  H01L27/11514 ,  H01L27/11521 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/281

摘要： Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.

摘要翻译： 示例性实施例涉及非易失性存储器件的不良区域管理方法。 非易失性存储器件可以包括多个存储器块，并且每个块可以包含堆叠在衬底上的存储器层。 根据示例实施例，一种方法包括访问存储器块之一，判断所访问的存储器块是否包括至少一个包含坏存储器单元的存储器层。 如果检测到不良存储器单元，则该方法还可以包括配置存储器件以将所访问的存储器块的至少一个存储器层视为不良区域。

公开(公告)号：US09478300B2

公开(公告)日：2016-10-25

申请号：US14883922

申请日：2015-10-15

申请人： Kwanghoon Kim ,  Younggeon Yoo ,  Junjin Kong

发明人： Kwanghoon Kim ,  Younggeon Yoo ,  Junjin Kong

IPC分类号： G11C11/34 ,  G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/0483

摘要： An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.

摘要翻译： 根据本发明的示例性实施例的非易失性存储器系统的操作方法包括使用采样开始电压来检测存储器单元的单元计数，将检测到的单元计数与参考值进行比较，设置多个采样 基于比较结果的电压，使用采样电压对存储单元执行采样操作，并且基于采样操作的结果，检测用于区分程序状态中的任何一个程序状态的最佳读取电压。

公开(公告)号：US20160148703A1

公开(公告)日：2016-05-26

申请号：US14883922

申请日：2015-10-15

申请人： KWANGHOON KIM ,  Younggeon Yoo ,  Junjin Kong

发明人： KWANGHOON KIM ,  Younggeon Yoo ,  Junjin Kong

IPC分类号： G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/0483

摘要： An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the memory cells using a sampling start voltage, comparing the detected on-cell count with a reference value, setting a plurality of sampling voltages based on the comparison result, performing a sampling operation with respect to the memory cells using the sampling voltages, and detecting an optimum read voltage for distinguishing any one program state among the program states based on a result of the sampling operation.

摘要翻译： 根据本发明的示例性实施例的非易失性存储器系统的操作方法包括使用采样开始电压来检测存储器单元的单元计数，将检测到的单元计数与参考值进行比较，设置多个采样 基于比较结果的电压，使用采样电压对存储单元执行采样操作，并且基于采样操作的结果，检测用于区分程序状态中的任何一个程序状态的最佳读取电压。

公开(公告)号：US09183138B2

公开(公告)日：2015-11-10

申请号：US14053893

申请日：2013-10-15

申请人： Younggeon Yoo ,  Junjin Kong ,  Changkyu Seol ,  Hong Rak Son ,  Hyunseuk Yoo

发明人： Younggeon Yoo ,  Junjin Kong ,  Changkyu Seol ,  Hong Rak Son ,  Hyunseuk Yoo

IPC分类号： G06F12/02 ,  G11C16/10 ,  G11C13/00

CPC分类号： G06F12/0246 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0069 ,  G11C16/10 ,  G11C2013/0076

摘要： A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.

摘要翻译： 一种在非易失性存储器件中编程数据的方法包括：接收要在非易失性存储器件的选定存储器单元中编程的程序数据，从所选择的存储器单元读取数据，使用从多个编码中选择的至少一种编码方案对程序数据进行编码 根据程序数据和读取数据的比较，生成包括编码信息的标志数据，以及对选择的存储单元中的编码程序数据和标志数据进行编程的方案。

公开(公告)号：US09355724B2

公开(公告)日：2016-05-31

申请号：US14076299

申请日：2013-11-11

申请人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son

发明人： Eun Chu Oh ,  Junjin Kong ,  Hong Rak Son

IPC分类号： G11C16/04 ,  G11C11/56 ,  G11C16/26 ,  G11C16/16 ,  G11C16/14

CPC分类号： G11C16/04 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/16 ,  G11C16/26

摘要： A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.

摘要翻译： 一种操作配置成以子块为单位擦除存储器块的非易失性存储器件的方法包括：检测与包括所选存储器单元的所选子块相关联的未选择子块的状态信息，基于所选存储器单元的读偏置 在状态信息上，以及根据所调整的读取偏差从所选存储单元读取数据。 状态信息指示具有编程状态或擦除状态的未选择子块的数量。

公开(公告)号：US09256530B2

公开(公告)日：2016-02-09

申请号：US14610512

申请日：2015-01-30

申请人： Eun Chu Oh ,  Junjin Kong

发明人： Eun Chu Oh ,  Junjin Kong

IPC分类号： G11C16/16 ,  G06F12/02 ,  G11C16/04 ,  G11C16/34 ,  H01L27/115 ,  G11C16/14

CPC分类号： G06F12/0246 ,  G06F2212/7205 ,  G11C16/0483 ,  G11C16/14 ,  G11C16/16 ,  G11C16/3418 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

摘要： A nonvolatile memory device includes a memory block, a row decoder, a voltage generator and control logic. The memory block includes memory cells stacked in a direction intersecting a substrate, the memory block being divided into sub-blocks configured to be erased independently. The row decoder is configured to select the memory block by a sub-block unit. The voltage generator is configured to generate an erase word line voltage to be provided to a first word line of a selected sub-block of the sub-blocks and a cut-off voltage, higher than the erase word line voltage, to be provided to a second word line of the selected sub-block during an erase operation. The control logic is configured to control the row decoder and the voltage generator to perform an erase operation on the selected sub-block.

公开(公告)号：US08730738B2

公开(公告)日：2014-05-20

申请号：US13211743

申请日：2011-08-17

申请人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

发明人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

IPC分类号： G11C11/34 ,  G11C16/06

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3454

摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.

摘要翻译： 操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压 响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。