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    Semiconductor light emitting device and light emitting apparatus
    63.
    发明授权
    Semiconductor light emitting device and light emitting apparatus 失效
    半导体发光器件和发光装置

    公开(公告)号：US08766311B2

    公开(公告)日：2014-07-01

    申请号：US13206649

    申请日：2011-08-10

    申请人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

    CPC分类号： H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

    Method for manufacturing nitride semiconductor device
    64.
    发明授权
    Method for manufacturing nitride semiconductor device 有权
    氮化物半导体器件的制造方法

    公开(公告)号：US08809085B2

    公开(公告)日：2014-08-19

    申请号：US13222238

    申请日：2011-08-31

    申请人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L33/22

    CPC分类号： H01L33/0079 ,  H01L33/22

    摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

    摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

    Semiconductor light emitting device and method of manufacturing the same
    66.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08399896B2

    公开(公告)日：2013-03-19

    申请号：US12875503

    申请日：2010-09-03

    申请人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Shinya Nunoue

    IPC分类号： H01L33/30 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes AlxGa1−xN (0

    摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，势垒层和阱层。 n型和p型半导体层和阻挡层包括氮化物半导体。 阻挡层设置在n型和p型半导体层之间。 阱层设置在阻挡层之间，具有比阻挡层更小的带隙能量，并且包括InGaN。 阻挡层中的至少一个包括第一层，第二层和第三层。 第二层比第一层更靠近p型半导体层。 第三层比第二层更靠近p型半导体层。 第二层包括Al x Ga 1-x N（0

    Light emitting device
    67.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08395169B2

    公开(公告)日：2013-03-12

    申请号：US12874839

    申请日：2010-09-02

    申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

    摘要翻译： 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

    Method for manufacturing nitride semiconductor layer
    69.
    发明授权
    Method for manufacturing nitride semiconductor layer 有权
    氮化物半导体层的制造方法

    公开(公告)号：US09349590B2

    公开(公告)日：2016-05-24

    申请号：US13604183

    申请日：2012-09-05

    申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Naoharu Sugiyama ,  Shinya Nunoue

    IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/12

    CPC分类号： H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

    摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

    摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。