公开(公告)号：US20090272490A1

公开(公告)日：2009-11-05

申请号：US11484396

申请日：2006-07-11

申请人： Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

发明人： Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC分类号： D01F9/12 ,  B29C65/00

CPC分类号： B82Y40/00 ,  B01J23/74 ,  B01J37/0215 ,  B82Y30/00 ,  C01B32/162 ,  Y10T156/1089

摘要： A method for manufacturing open-ended carbon nanotubes is described. The method includes steps of: providing a substrate having a catalyst layer formed thereon; placing the substrate in a reaction chamber; introducing a carbon source gas containing carbon element into the reaction chamber for growing carbon nanotubes form the catalyst layer; promptly reducing a concentration of the carbon source gas when the growth of carbon nanotubes in process, thereby ceasing the growth of the carbon nanotubes instantly; and separating the carbon nanotubes from the catalyst layer.

摘要翻译： 描述了制造开放式碳纳米管的方法。 该方法包括以下步骤：提供其上形成有催化剂层的基板; 将基板放置在反应室中; 将碳元素的碳源气体引入用于生长碳纳米管的反应室中形成催化剂层; 在碳纳米管生长过程中迅速降低碳源气体的浓度，从而立即停止碳纳米管的生长; 并从催化剂层分离碳纳米管。

公开(公告)号：US07606184B2

公开(公告)日：2009-10-20

申请号：US11029664

申请日：2005-01-04

申请人： Kai Liu ,  Richard Kommrusch

发明人： Kai Liu ,  Richard Kommrusch

IPC分类号： H04L5/00

CPC分类号： H03H7/463 ,  H03H2001/0085

摘要： A multiplexer, such as a diplexer, is delineated. The multiplexer may be employed in a communications system that may communicate in multiple frequency bands within a predefined range of frequencies, e.g., 2400 MHz-4900 MHz. The communications system may operate in a network, such as a wireless local area network, without significant interference from signals used by a cellular/mobile telephone system. The multiplexer may include multiple channels with bandpass filters that may be formed with lumped inductors and lumped capacitors. In at least one of the channels, the bandpass filter may be formed by combining at least one lowpass filter with at least one highpass filter.

摘要翻译： 已经描述了诸如双工器之类的多路复用器。 多路复用器可以用在可以在预定范围的频率（例如2400MHz-4900MHz）内在多个频带中通信的通信系统中。 通信系统可以在诸如无线局域网的网络中操作，而不会由蜂窝/移动电话系统使用的信号的显着干扰。 多路复用器可以包括具有带通滤波器的多个通道，其可以形成有集总电感器和集总电容器。 在至少一个通道中，可以通过将至少一个低通滤波器与至少一个高通滤波器组合来形成带通滤波器。

公开(公告)号：US20090197082A1

公开(公告)日：2009-08-06

申请号：US12321568

申请日：2009-01-22

申请人： Kai-Li Jiang ,  Liang Liu ,  Kai Liu ,  Qing-Yu Zhao ,  Yong-Chao Zhai ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Liang Liu ,  Kai Liu ,  Qing-Yu Zhao ,  Yong-Chao Zhai ,  Shou-Shan Fan

IPC分类号： H01B1/04 ,  B32B15/04

CPC分类号： H01B13/0026 ,  H01B1/04 ,  H01B1/24 ,  Y10T428/2918

摘要： A individually coated carbon nanotube wire-like structure includes an amount of carbon nanotubes and a conductive coating on an outside surface of the carbon nanotubes. The carbon nanotubes are joined end-to-end by van der Waals attractive force therebetween.

摘要翻译： 单独涂覆的碳纳米管线状结构包括一定量的碳纳米管和在碳纳米管的外表面上的导电涂层。 碳纳米管之间以范德华力吸引力端对端连接。

公开(公告)号：US20090108456A1

公开(公告)日：2009-04-30

申请号：US11932845

申请日：2007-10-31

申请人： Francois Hebert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

发明人： Francois Hebert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/64 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/37099

摘要： A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes: a) Lithographically patterning the top metal layer into the contact zones and the contact enhancement zones. b) Forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.

摘要翻译： 提出了一种焊顶增强型半导体器件进行封装。 焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。 至少一个接触区域电连接到至少一个接触增强区域。 每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。 在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。 用于制造焊料顶部器件的方法包括：a）将顶部金属层的光刻图案化成接触区域和接触增强区域。 b）使用用于增加复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

公开(公告)号：US20080303606A1

公开(公告)日：2008-12-11

申请号：US11760207

申请日：2007-06-08

申请人： Kai Liu ,  Robert Charles Frye

发明人： Kai Liu ,  Robert Charles Frye

IPC分类号： H03H7/42 ,  H01F7/06

CPC分类号： H03H7/42 ,  H01F17/0013 ,  H03H7/1775 ,  Y10T29/4902 ,  Y10T29/49071

摘要： A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between secondhand third portions of the third coil.

摘要翻译： 宽带平衡 - 不平衡转换器包括沉积在衬底上并定向在第一线圈中的第一金属化。 第一线圈水平延伸穿过衬底，同时保持基本平坦的垂直轮廓。 第二金属化沉积在衬底上并定向在第二线圈中。 第二线圈磁耦合到第一线圈，并且第二线圈的一部分定向在第一线圈的内部。 第三金属化沉积在衬底上并定向在第三线圈中。 第三线圈磁耦合到第一和第二线圈。 第三线圈的第一部分位于第二线圈的内部。 第三线圈具有在第三线圈的第二手第三部分之间连接到第三线圈的平衡端口。

公开(公告)号：US20080182387A1

公开(公告)日：2008-07-31

申请号：US11701561

申请日：2007-01-31

申请人： Tao Feng ,  Ming Sun ,  Yueh-Se Ho ,  Kai Liu

发明人： Tao Feng ,  Ming Sun ,  Yueh-Se Ho ,  Kai Liu

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/288 ,  H01L21/6836 ,  H01L24/02 ,  H01L24/11 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014

摘要： A method of fabricating a semiconductor device employing electroless plating including wafer backside protection during wet processing is disclosed. The method includes the steps of laminating a wafer back side and a frame with a protective tape, applying a protective coating to a peripheral portion of the wafer and an adjoining exposed area of the protective tape, the protective coating, protective tape, and wafer forming a protected wafer assembly, curing the frame-supported protective coating, cutting the protected wafer assembly from the protective tape surrounding the protective coating, wet processing the protected wafer assembly, laminating the protected wafer assembly with a second tape, dicing the wafer, and picking up the die from the protective tape.

摘要翻译： 公开了一种在湿法处理中制造采用化学镀的半导体器件的方法，包括晶片背面保护。 该方法包括以下步骤：将晶片背面和框架与保护带层压，将保护涂层施加到晶片的周边部分以及相邻的保护带的暴露区域，保护涂层，保护带和晶片成形 保护的晶片组件，固化框架支撑的保护涂层，将保护的晶片组件从围绕保护涂层的保护带切割，湿处理受保护的晶片组件，用第二带层压受保护的晶片组件，切割晶片，以及拾取 从保护胶带上取下模具。

公开(公告)号：US20070031299A1

公开(公告)日：2007-02-08

申请号：US11404522

申请日：2006-04-14

申请人： Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Kai Liu ,  Shou-Shan Fan

IPC分类号： B01J19/00 ,  B82B3/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/08

摘要： A device (20) for manufacturing a carbon nanotube array (10) includes a reaction chamber (220), a gas introducing tube (228), and a quartz boat (240). The reaction chamber includes a first gas inlet (222), a second gas inlet (224), and a gas outlet (226). The first gas inlet is configured for introducing a reaction gas, and the second gas inlet is configured for introducing a disturbance gas. The quartz boat is disposed in the reaction chamber. The quartz boat is used to carry a substrate (12) from/upon which the carbon nanotube array grows. The gas introducing tube is connected to the second gas inlet and to the quartz boat. The gas introducing tube is used to transport the disturbance gas introduced from the second gas inlet to the quartz boat to disturb/interrupt nanotube growth.

摘要翻译： 用于制造碳纳米管阵列（10）的装置（20）包括反应室（220），气体导入管（228）和石英舟（240）。 反应室包括第一气体入口（222），第二气体入口（224）和气体出口（226）。 第一气体入口构造成用于引入反应气体，并且第二气体入口构造成用于引入扰动气体。 石英舟设置在反应室中。 石英舟用于承载碳纳米管阵列生长的基底（12）。 气体导入管连接到第二气体入口和石英舟。 气体导入管用于将从第二气体入口引入的干扰气体输送到石英舟，以扰乱/中断纳米管生长。

公开(公告)号：US07144562B2

公开(公告)日：2006-12-05

申请号：US10718491

申请日：2003-11-19

申请人： Kai Liu ,  Peter Klavins ,  Limin Zhao

发明人： Kai Liu ,  Peter Klavins ,  Limin Zhao

IPC分类号： C01B35/00

CPC分类号： H01L39/24 ,  C01B32/907 ,  C04B35/56 ,  C04B35/563 ,  C04B35/65 ,  C04B35/653 ,  C04B2235/40 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/661 ,  C04B2235/761 ,  C04B2235/767 ,  C04B2235/79

摘要： Methods are described for synthesizing stoichiometric LiBC and hole doped Li1-xBC (lithium borocarbide) according to heating processes, such as by both an arc-melting method and a sealed tantalum ampoule method. The arc-melting method requires forming a pellet of uniformly-mixed elemental lithium, boron, and graphite and subjecting it to an arc-melt process sufficient to trigger a self-propagating exothermic reaction. Alternatively, the titanium ampoule method requires sealing uniformly-mixed elemental lithium, boron, and graphite (Li—B—C) in a tantalum ampoule; and heating under sufficient temperature for a sufficient period of time. Hole-doped Li1-xBC (0≦x≦0.37) can then be produced, such as through vacuum de-intercalation from the LiBC. According to the present invention, the hexagonal crystal lattice remains largely intact, with only slight decreases in lattice parameters upon hole-doping. The samples are intrinsically diamagnetic and are semiconducting in the 2 K to 300 K range studied.

摘要翻译： 描述了根据加热过程，例如通过电弧熔化法和密封的钽安瓿法合成化学计量的LiBC和掺杂锂的Li 1-x BC（硼氢化锂）的方法。 电弧熔化法需要形成均匀混合的元素锂，硼和石墨的颗粒，并使其经受足够的电弧熔融过程以引发自扩散的放热反应。 或者，钛安瓿方法需要在钽安瓿中密封均匀混合的元素锂，硼和石墨（Li-B-C）; 并在足够的温度下加热足够的时间。 然后可以产生孔掺杂的Li 1-x BC（0 <= x <= 0.37），例如通过来自LiBC的真空去插入。 根据本发明，六方晶格晶体基本保持完好，空穴掺杂时晶格参数仅略微降低。 样品本质上是抗磁性的，并且在所研究的2K至300K范围内是半导体的。

公开(公告)号：US20060209876A1

公开(公告)日：2006-09-21

申请号：US11343397

申请日：2006-01-31

申请人： Kai Liu ,  Carl Wang ,  Arty Chandra ,  Jin Wang

发明人： Kai Liu ,  Carl Wang ,  Arty Chandra ,  Jin Wang

IPC分类号： H04L12/413

CPC分类号： H04W16/28 ,  H04B7/0695

摘要： An access point receives uplink transmissions from client stations using directional antenna beams. The directional antenna beams are generated by an antenna array. The different directional antenna beams are assigned beam identification numbers, and a preferred antenna beam is selected for each client station. The client stations in the different antenna beam regions initiate their uplink transmissions using assigned backoff slots within the contention window. The access point selects the preferred directional antenna beam corresponding to the directional antenna beams assigned to the backoff slots.

摘要翻译： 接入点使用定向天线波束从客户端站接收上行链路传输。 定向天线波束由天线阵列产生。 不同的定向天线波束被分配波束识别号，并且为每个客户站选择优选的天线波束。 不同天线波束区域中的客户站在竞争窗口内使用分配的退避时隙来发起其上行链路传输。 接入点选择对应于分配给退避时隙的定向天线波束的优选定向天线波束。

公开(公告)号：USD935565S1

公开(公告)日：2021-11-09

申请号：US29715510

申请日：2019-12-03

申请人： Kai Liu

设计人： Kai Liu