公开(公告)号：US10312315B2

公开(公告)日：2019-06-04

申请号：US15416166

申请日：2017-01-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L21/00 ,  H01L27/32 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/08 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  B23K26/04 ,  H01L41/314 ,  H01L51/50

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US10065808B2

公开(公告)日：2018-09-04

申请号：US15219930

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kohei Yokoyama ,  Satoru Idojiri ,  Hisao Ikeda ,  Yasuhiro Jinbo ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi

IPC: B32B38/10 ,  B65G49/06 ,  H01L51/52 ,  H01L51/56 ,  B32B17/06 ,  B32B37/00 ,  B32B43/00 ,  B65H3/08 ,  B65H3/48 ,  B65H16/00 ,  B65H35/00 ,  H01L27/32 ,  H01L21/68 ,  H01L21/673 ,  H01L21/677

Abstract: An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included.

公开(公告)号：US09905589B2

公开(公告)日：2018-02-27

申请号：US15100476

申请日：2014-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/00 ,  H01L27/12 ,  H01L21/683 ,  H01L29/786 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1222 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/78648 ,  H01L29/78675 ,  H01L51/003 ,  H01L2221/6835

Abstract: An object is to provide a novel separation method or a novel manufacturing method of a device. In the case where a bond of M-O—W (M is a given element) is divided by application of physical force, a liquid is absorbed into the gap, whereby the bond becomes bonds of M-OH HO—W with a longer bond distance and the detachment can be promoted accordingly. In the detachment, a roller such as a drum roller can be used. Part of the roller surface may have adhesiveness. For example, an adhesive tape or the like may be put on part of the roller surface. By rotating the roller, the layer to be separated is wound and detached from the substrate having an insulating surface.

公开(公告)号：US09682544B2

公开(公告)日：2017-06-20

申请号：US15147020

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kayo Kumakura ,  Tomoya Aoyama ,  Akihiro Chida ,  Kohei Yokoyama ,  Masakatsu Ohno ,  Satoru Idojiri ,  Hisao Ikeda ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi ,  Yasuhiro Jinbo

IPC: B32B38/10 ,  B32B43/00 ,  G02B6/00 ,  H01L21/67 ,  B26D1/04 ,  H01L51/56 ,  B26D1/00 ,  H01L27/12 ,  H01L27/32

CPC classification number: B32B43/006 ,  B26D1/04 ,  B26D2001/006 ,  B32B38/10 ,  B32B2457/00 ,  G02B6/00 ,  H01L21/67092 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L2221/68327 ,  H01L2227/323 ,  H01L2251/5338 ,  Y10T156/1126 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1933 ,  Y10T156/1944 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.

公开(公告)号：US09437831B2

公开(公告)日：2016-09-06

申请号：US14553251

申请日：2014-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L23/52 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L51/50 ,  H01L41/314 ,  H01L27/32

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L41/314 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5096 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Abstract translation: 在第一基板上形成第一有机树脂层; 在第一有机树脂层上形成第一绝缘膜; 第一元件层形成在第一绝缘膜上; 在第二基板上形成第二有机树脂层; 在第二有机树脂层上形成第二绝缘膜; 第二元件层形成在第二绝缘膜上; 第一基板和第二基板接合; 第一分离步骤，其中第一有机树脂层和第一基板之间的粘合力减小; 第一有机树脂层和第一柔性基板与第一接合层接合; 第二分离步骤，其中所述第二有机树脂层和所述第二基板之间的粘合减小; 并且第二有机树脂层和第二柔性基板与第二接合层接合。

公开(公告)号：US09427949B2

公开(公告)日：2016-08-30

申请号：US14553227

申请日：2014-11-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: B32B38/10 ,  B32B43/00 ,  B32B37/12 ,  B32B37/00 ,  H01L51/56 ,  B32B37/26 ,  H01L51/00

CPC classification number: B32B43/006 ,  B32B37/0053 ,  B32B37/025 ,  B32B37/12 ,  B32B37/1207 ,  B32B38/10 ,  B32B2037/1253 ,  B32B2037/268 ,  B32B2457/20 ,  B32B2457/208 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3262 ,  H01L51/0013 ,  H01L51/003 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338 ,  Y10T156/1111 ,  Y10T156/1174 ,  Y10T156/1928 ,  Y10T156/195

Abstract: The yield of a peeling process is improved. A peeling apparatus includes a structure body with a convex surface and a stage with a supporting surface which faces the convex surface. The structure body can hold a first member of a process member between the convex surface and the supporting surface. The stage can hold a second member of the process member. The radius of curvature of the convex surface is less than the radius of curvature of the supporting surface. The linear velocity of the convex surface is greater than or equal to the speed of a rotation center of the structure body passing the stage. The first member is wound along the convex surface to be separated from the second member.

Abstract translation: 剥离过程的产率提高。 剥离装置包括具有凸面的结构体和具有与凸面对置的支撑面的台。 结构体可以在凸表面和支撑表面之间保持处理构件的第一构件。 舞台可以容纳进程成员的第二个成员。 凸面的曲率半径小于支撑面的曲率半径。 凸面的线速度大于或等于通过平台的结构体的旋转中心的速度。 第一构件沿凸形表面缠绕以与第二构件分离。

公开(公告)号：US09333736B2

公开(公告)日：2016-05-10

申请号：US14468662

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kayo Kumakura ,  Tomoya Aoyama ,  Akihiro Chida ,  Kohei Yokoyama ,  Masakatsu Ohno ,  Satoru Idojiri ,  Hisao Ikeda ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi ,  Yasuhiro Jinbo

IPC: B32B38/10 ,  B32B43/00 ,  G02B6/00 ,  H01L21/67 ,  B26D1/04 ,  B26D1/00

CPC classification number: B32B43/006 ,  B26D1/04 ,  B26D2001/006 ,  B32B38/10 ,  B32B2457/00 ,  G02B6/00 ,  H01L21/67092 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L2221/68327 ,  H01L2227/323 ,  H01L2251/5338 ,  Y10T156/1126 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1933 ,  Y10T156/1944 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.

Abstract translation: 提供堆叠的处理装置。 堆叠包括彼此附接的两个基板，其间隙设置在它们的端部之间。 处理装置包括：固定机构，其固定堆叠的一部分;多个吸附夹具，其固定堆叠体的一个基板的外周边缘;以及楔形夹具，其插入到堆叠的角部。 多个吸附夹具包括允许吸附夹具在垂直方向和水平方向上分开移动的机构。 处理装置还包括传感器，其感测堆叠中的端部之间的间隙的位置。 楔形夹具的尖端沿着形成在堆叠的端表面上的倒角移动。 楔形夹具插入到堆叠中的端部之间的间隙中。

公开(公告)号：US20150029483A1

公开(公告)日：2015-01-29

申请号：US14510463

申请日：2014-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi

IPC: G03F7/20

CPC classification number: H01L27/1288 ,  G03B27/00 ,  G03B27/16 ,  G03F7/702 ,  G09G3/3208 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.

Abstract translation: 本发明提供了一种用于从背面曝光的高度可控的装置和曝光方法，并且还提供了一种制造使用该装置的半导体器件的方法。 本发明涉及使用背光曝光装置曝光，其中反射装置设置在基板的正面，远离光敏薄膜表面X（X =0.1μm至1000μm）， 并且在远离图案末端的距离Y的位置以自对准的方式形成感光薄膜图案，具有良好的可控性。 本发明使用该方法制造TFT。