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    PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION
    63.
    发明申请
    PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION 审中-公开
    使用激光雷射消除氧化硅层的图案

    公开(公告)号：US20170005206A1

    公开(公告)日：2017-01-05

    申请号：US14991789

    申请日：2016-01-08

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

    IPC: H01L31/0216 ,  H01L21/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/068 ,  H01L21/311 ,  H01L31/0236

    CPC classification number: H01L31/02167 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/31105 ,  H01L21/31144 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0682 ,  H01L31/1896 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    Fabrication methods for monolithically isled back contact back junction solar cells
    64.
    发明授权
    Fabrication methods for monolithically isled back contact back junction solar cells 有权
    单片反接触背结太阳能电池的制造方法

    公开(公告)号：US09379258B2

    公开(公告)日：2016-06-28

    申请号：US14493341

    申请日：2014-09-22

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

    CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.

    Abstract translation: 制造接触背面太阳能电池的制造方法。 在太阳能电池基板的背面上沉积基底掺杂剂源，场致发射掺杂源和发射极掺杂源。 对太阳能电池基板进行退火，形成对应于发射极掺杂源的发射极接触区域，对应于场发射极掺杂剂的场发射极区域和对应于基极掺杂剂源极的基极接触区域。 蚀刻基底掺杂剂源，场致发射体掺杂源和发射极掺杂源。 背面钝化层沉积在太阳能电池的背面上。 触点通过背面钝化层向发射极接触区域和基极接触区域开放。 图案化的基底金属化和图案化发射极金属化形成在具有与基极接触区域和发射极接触区域的电互连的太阳能电池的背面上。

    Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules
    65.
    发明授权
    Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules 有权
    光伏太阳能电池和模块中单片集成旁路开关的系统和方法

    公开(公告)号：US09219171B2

    公开(公告)日：2015-12-22

    申请号：US14055813

    申请日：2013-10-16

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi

    IPC: H01L31/00 ,  H01L31/02 ,  H01L27/142 ,  H01L31/05 ,  H01L31/049

    CPC classification number: H01L31/0443 ,  H01L27/1421 ,  H01L31/02008 ,  H01L31/0201 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  Y02B10/12 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure.

    Abstract translation: 提供具有集成旁路开关的太阳能电池的结构和方法。 根据一个实施例，提供了一种集成的太阳能电池和旁路开关，其包括具有背景掺杂，前侧和背面的半导体层。 图案化的第一级金属位于层背面，电绝缘背板位于第一级金属上。 沟槽隔离图案将半导体层分隔成太阳能电池区域和至少一个单片集成旁路开关区域。 图案化的第二级金属位于电绝缘背板上，并且通过底板连接到第一级金属，以完成单片集成太阳能电池和旁路开关结构的电气金属化。

    PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
    66.
    发明申请
    PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS 审中-公开
    被接触的接触器返回接头太阳能电池

    公开(公告)号：US20150206998A1

    公开(公告)日：2015-07-23

    申请号：US14558707

    申请日：2014-12-02

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Heather Deshazer ,  Mohammed Islam ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/0216

    CPC classification number: H01L31/022458 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

    Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is on the base and emitter regions. A first electrically conductive contact contacts the passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer. A second electrically conductive contact contacts the passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a valence band of the light absorbing layer.

    Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例，描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 钝化介质绝缘层位于基极和发射极区域上。 第一导电触点与钝化介电绝缘层接触，具有适于选择性收集与光吸收层的导带紧密匹配的电子的功函数。 第二导电触点一起接触钝化介电绝缘层，具有适于选择性地收集与光吸收层的价带紧密匹配的电子的功函数。

    SYSTEMS AND METHODS FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS
    67.
    发明申请
    SYSTEMS AND METHODS FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS 审中-公开
    单晶离子太阳能光伏电池的系统和方法

    公开(公告)号：US20150187969A1

    公开(公告)日：2015-07-02

    申请号：US14659235

    申请日：2015-03-16

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi

    IPC: H01L31/0224

    CPC classification number: H01L31/02245 ,  H01L31/02 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/0443 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  H02J3/385 ,  H02S20/25 ,  H02S40/34 ,  Y02B10/12 ,  Y02E10/50

    Abstract: The monolithically isled solar cell comprises a semiconductor layer having a light receiving frontside and a passivated backside opposite the frontside. A first metal layer on the semiconductor layer passivated backside comprises base and emitter metallization islands corresponding to monolithic isled semiconductor regions. An insulating support backplane is attached to the first metal layer and portions of the semiconductor layer passivated backside. Trenches formed through the semiconductor layer to the insulating support backplane in a trench isolation pattern electrically isolate the semiconductor layer into monolithic isled semiconductor regions arranged on the insulating support backplane. Conductive vias through the insulating support backplane contact portions of each of the first metal layer base and emitter metallization islands. A second metal layer base and emitter metallization on the insulating support backplane contacts the first metal layer base and emitter metallization islands. The second metal layer electrically interconnects the monolithic isled semiconductor regions.

    Abstract translation: 单片太阳能电池包括具有光接收前沿和与前侧相对的钝化背面的半导体层。 钝化背面的半导体层上的第一金属层包括对应于单片半导体区域的基极和发射极金属化岛。 绝缘支撑底板连接到第一金属层，半导体层的部分钝化在背面。 在沟槽隔离图案中通过半导体层形成到绝缘支撑背板的沟槽将半导体层电隔离成布置在绝缘支撑背板上的单片半导体区域。 通过第一金属层基底和发射极金属化岛中的每一个的绝缘支撑背板接触部分的导电孔。 绝缘支撑背板上的第二金属层基极和发射极金属化接触第一金属层基极和发射极金属化岛。 第二金属层将整体式半导体区域电连接。

    STRUCTURES AND METHODS FOR IMPROVING SOLAR CELL EFFICIENCY AND MECHANICAL STRENGTH
    69.
    发明申请
    STRUCTURES AND METHODS FOR IMPROVING SOLAR CELL EFFICIENCY AND MECHANICAL STRENGTH 审中-公开
    改善太阳能电池效率和机械强度的结构和方法

    公开(公告)号：US20150162465A1

    公开(公告)日：2015-06-11

    申请号：US14479523

    申请日：2014-09-08

    Applicant: SOLEXEL, INC.

    Inventor： Pawan Kapur ,  Suketo Parikh ,  Mehrdad M. Moslehi

    IPC: H01L31/0236 ,  H01L31/0232 ,  H01J37/32 ,  H01L31/054

    CPC classification number: H01L31/02366 ,  H01J37/32651 ,  H01J2237/3346 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/054 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24149

    Abstract: The present disclosure presents a three-dimensional thin film solar cell (3-D TFSC) substrate having enhanced mechanical strength, light trapping, and metal modulation coverage properties. The substrate includes a plurality of unit cells, which may or may not be different. Unit cells are defined as a small self-contained geometrical pattern which may be repeated. Each unit cell structure includes a wall enclosing a trench. Further, the unit cell includes an aperture having an aperture diameter. For the purposes of the present disclosure, the dimensions of interest include wall thickness, wall height, and aperture diameter. A pre-determined variation in these dimensions among unit cells across the substrate produces specific advantages.

    Abstract translation: 本公开内容提供了具有增强的机械强度，光捕获和金属调制覆盖性能的三维薄膜太阳能电池（3-D TFSC）基板。 衬底包括多个单元电池，其可以是或可以不是不同的。 单元单元被定义为可以重复的小的独立几何图案。 每个单电池结构都包括一个包围沟槽的墙壁。 此外，单元电池包括具有孔径的孔。 为了本公开的目的，感兴趣的尺寸包括壁厚度，壁高度和孔直径。 在衬底之间的单元电池中这些尺寸的预定变化产生了特定的优点。

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