摘要:
Provided is a processing method capable of reliably processing the inside of a depression such as a trench, a contact hole, a deep pattern, or a pore of a porous substrate. A chemical solution M is supplied into a processing bath 1 placing a substrate W, and the processing bath 1 is repetitively evacuated and pressurized several times at a pressure lower than the atmospheric pressure. Alcohol X is brought into contact with the surface of the substrate W and supplied into a depression W−1. The chemical solution M is supplied into the processing bath 1 containing the substrate W until the chemical solution M reaches a water level at which the substrate W is dipped, thereby allowing the chemical solution M to enter the depression W−1. The chemical solution M is discharged from the processing bath 1, and a portion of the chemical solution M entering the depression W−1 and mixed with the alcohol X is evaporated by evacuating the processing bath 1. This process is repeated several times.
摘要:
A semiconductor integrated circuit driven by an external power, comprises a change unit whose state changes with lapse of time without the external power, an output unit configured to output a signal in response to an instruction issued when the external power is supplied, the signal indicating a change of the state of the change unit, and an execution unit configured to execute a process in response to the signal. Therefore, the circuit is capable of utilizing time-point/time-period information even if they are not supplied with power.
摘要:
The interval Λ between each stripe of interference fringe generated in a conventional n-type contact layer is determined by a function (f(λ)=λ(n2−neq2)−1/2/2) wherein λ, n, and neq represent luminous wavelength λ of lights radiated from a light emitting part 104, refractive index n of the n-type contact layer, and equivalent refractive index neq of the n-type contact layer in guided wave mode, respectively. The remaining thickness δ of the n-type contact layer 102 at the concave part D which is formed at the back surface of the crystal growth substrate may be about Λ/2. When at least one portion of the n-type contact layer which is formed right beneath the laser cavity remains with about δ in thickness, the n-type contact layer arranged even right beneath the laser cavity can maintain excellent contact to a negative electrode. As a result, effective light confinement enables to adequately suppress ripples in FFP owing to lights leaked into the n-type contact layer, to thereby provide a semiconductor laser which oscillates stable lights.
摘要:
A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.
摘要:
A method of setting validity period of IC card, includes preparing IC card including change unit whose state changes with lapse of time starting from initial state without external power, measuring unit configured to measure state of change unit so as to generate information indicating whether or not validity period has elapsed, and operation unit configured to be operable if information indicates that validity period fails to have yet elapsed, and to be inoperable if information indicates that validity period has elapsed, preparing IC card case capable to house IC card by user, IC card case including identification unit configured to determine whether or not user is legitimate, performing user identification utilizing identification unit, when IC card is housed in IC card case, and transmitting signal to change unit in IC card depending on result of user identification, signal initializing change unit to initial state.
摘要:
A method of setting validity period of IC card, includes preparing IC card including change unit whose state changes with lapse of time starting from initial state without external power, measuring unit configured to measure state of change unit so as to generate information indicating whether or not validity period has elapsed, and operation unit configured to be operable if information indicates that validity period fails to have yet elapsed, and to be inoperable if information indicates that validity period has elapsed, preparing IC card case capable to house IC card by user, IC card case including identification unit configured to determine whether or not user is legitimate, performing user identification utilizing identification unit, when IC card is housed in IC card case, and transmitting signal to change unit in IC card depending on result of user identification, signal initializing change unit to initial state.
摘要:
An ultra-flat non-consumable electrode welding torch which allows performing a welding operation through a narrow gap between adjacent piping such as welding piping of a boiler panel, to be mounted on a compact automatic welding head, and a welding head provided with such a welding torch are to be provided. As a gas supply mechanism that supplies a shield gas to a welding section formed at the tip of the non-consumable electrode through inside of the torch body for the non-consumable electrode welding, a gas supply path is provided for supplying the shield gas from an outer gas space in a double ring shaped gas space provided around a non-consumable electrode and divided by a partition wall, to an inner gas space through a plurality of orifices provided at regular intervals in the partition wall, and the gas is blown from the inner gas space to the region around the non-consumable electrode through a metal mesh plate. A gas outlet opening provided in the inner gas space is oriented in a different direction from the gas blowing direction through the orifice.
摘要:
A wire bonding method including the steps of forming a bump by performing ball bonding of a ball by wire on a second conductor, raising a capillary to a height that is equal to or lower than the height of a ball portion that rises into a through-hole of the capillary during formation of the bump, moving the capillary in a direction that is opposite from the first conductor, lowering the capillary so as to form an inclined wedge on the bump, cutting the wire, performing the primary bonding on the first conductor, and making a loop with the wire with respect to the bump from the first conductor, thus performing the secondary bonding on the inclined wedge on the bump.
摘要:
An intermediate server 6 or a main server 5 executes the steps of displaying a work site of a construction machine or a predetermined area regarding the work site on a subcontractor's personal computer 62, prompting an input for applying to an order for work of repair/replacement of parts belonging to a predetermined component section of the construction machine, extracting the predetermined qualification requirements, which have been stored in a database 6A beforehand, from the database based on received applying information, producing an examination sheet for determining whether a local subcontractor meets the extracted qualification requirements, transmitting the examination sheet produced in the producing step to the subcontractor's personal computer 62 via a communication network, and prompting an input in predetermined places of the examination sheet. An information processing system and an information processing method for construction machines are provided which can present satisfactory services to the customer side even when the work site is in, e.g., a remote frontier region.
摘要:
A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.