摘要:
A method, system and computer program of managing an access right to at least one asset associated with at least one digital work order, or to at least one element associated with the asset, and provides a system and a computer program for the same. The method includes the steps of: loading a security policy associated with the work order, the asset, or the element; starting to monitor location information of the asset or the element and a moving object, or a elapsed time of the moving object at the location; and issuing an event for managing the asset, the element or the moving object in response to the start of the work order or in response to the fact that the loaded security policy is violated by any of the locations, a change in the location, or the elapsed time at the location obtained by the monitoring.
摘要:
The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.
摘要:
A method of manufacturing a semiconductor device comprises the following steps: a step of depositing a silicon oxide film on the top surface of an epitaxial layer of the region where a high withstand voltage MOS transistor is formed; a step of subsequently depositing a silicon oxide film on the top surface of the epitaxial layer according to the thickness of a gate oxide film of a low withstand voltage MOS transistor; and a step of subsequently adjusting the thickness of the silicon oxide film on the top surface of the high withstand voltage MOS transistor by etching and forming a P-type diffusion layer by ion-implantation method. This method can manufacture elements having gate oxide films different in thickness at low cost.
摘要:
A filter device substrate 1 of the present invention is formed by stacking a plurality of ceramic layers 12, 14, and includes a filter chip mounting portion for mounting a transmission filter chip 2 and a reception filter chip 3. Arranged on a surface of one ceramic layer 12 are a signal input pad 73, a signal output pad 7, a signal input side ground pattern 44 and a signal output side ground pattern 43 for connecting a signal input terminal C, a signal output terminal D, a signal input side ground terminal G and a signal output side ground terminal G, respectively, of the reception filter chip 3. The signal input side ground pattern 44 and the signal output side ground pattern 43 are connected to each other by a connection wiring pattern 45 on the surface of the one ceramic layer 12.
摘要:
The present invention provides an electronic device comprising a base substrate to be surface-mounted on a circuit board, one or more electronic component elements mounted on a surface of the base substrate and/or therein, an external electrode provided on an end portion of the base substrate and in the form of a post perpendicular to a rear surface of the base substrate for connecting the one or more electronic component elements to the circuit board. Furthermore, the base substrate is provided on its end portion with a slope crossing a side surface and a rear surface of the base substrate. A surface of the external electrode is exposed on the slope.
摘要:
The present invention provides an antenna duplexer comprising a package having a plurality of ceramic layers superposed, and a transmitting filter and a receiving filter which are mounted on a surface of the package. A phase-matching strip line is formed on a surface of one ceramic layer. The package has grounding layers formed respectively on surfaces of upper and lower ceramic layers with the phase-matching strip line interposed therebetween. A plurality of via holes are formed around the phase-matching strip line for connecting the two grounding layers to each other.
摘要:
The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.
摘要:
The present invention is the method to trap reliably the reaction intermediates of an oxidoreductase, such as cytochrome-c oxidase. The present invention is a method for trapping reaction intermediates of an oxidoreductase comprising the steps of: (the first step) dissolving an oxidoreductase, a photoinduced reducing agent that releases electrons by light-irradiation, amine-type electron donor and a substrate for said oxidoreductase in water and mixing these; (the second step) cooling the mixture prepared in the first step to 70˜270 K to be frozen; (the third step) irradiating the frozen mixture prepared in the second step at 70˜270 K with a light in a wavelength region including the absorbing wavelength of said photoinduced reducing agent; and (the fourth step) raising the temperature of the frozen mixture prepared in the third step to the temperature of 80˜270 K that is higher than the temperature of the third step.
摘要:
The present invention provides an electronic device comprising a base substrate to be surface-mounted on a circuit board, one or more electronic component elements mounted on a surface of the base substrate and/or therein, an external electrode provided on an end portion of the base substrate and in the form of a post perpendicular to a rear surface of the base substrate for connecting the one or more electronic component elements to the circuit board. Furthermore, the base substrate is provided on its end portion with a slope crossing a side surface and a rear surface of the base substrate. A surface of the external electrode is exposed on the slope.
摘要:
The present invention provides an antenna duplexer comprising a package having a plurality of ceramic layers superposed, and a transmitting filter and a receiving filter which are mounted on a surface of the package. A phase-matching strip line is formed on a surface of one ceramic layer. The package has grounding layers formed respectively on surfaces of upper and lower ceramic layers with the phase-matching strip line interposed therebetween. A plurality of via holes are formed around the phase-matching strip line for connecting the two grounding layers to each other.