Method of Managing Asset Associated with Work Order or Element Associated with Asset, and System and Computer Program for the Same
    61.
    发明申请
    Method of Managing Asset Associated with Work Order or Element Associated with Asset, and System and Computer Program for the Same 审中-公开
    管理与资产相关的工作单或资产相关资产的方法,以及与之相关的系统和计算机程序

    公开(公告)号:US20120297445A1

    公开(公告)日:2012-11-22

    申请号:US13565002

    申请日:2012-08-02

    IPC分类号: G06F21/00

    摘要: A method, system and computer program of managing an access right to at least one asset associated with at least one digital work order, or to at least one element associated with the asset, and provides a system and a computer program for the same. The method includes the steps of: loading a security policy associated with the work order, the asset, or the element; starting to monitor location information of the asset or the element and a moving object, or a elapsed time of the moving object at the location; and issuing an event for managing the asset, the element or the moving object in response to the start of the work order or in response to the fact that the loaded security policy is violated by any of the locations, a change in the location, or the elapsed time at the location obtained by the monitoring.

    摘要翻译: 一种方法,系统和计算机程序,用于管理与至少一个数字工单相关联的至少一个资产的访问权限,或至少一个与该资产相关联的元素的访问权限,并为其提供系统和计算机程序。 该方法包括以下步骤:加载与工单,资产或元素相关联的安全策略; 开始监视资产或元素和移动对象的位置信息,或者移动对象在该位置的经过时间; 以及响应于所述工作订单的开始或响应于所加载的安全策略被任何位置违反的事实,所述位置的改变或 在通过监视获得的位置处的经过时间。

    Resist and method of forming resist pattern
    62.
    发明授权
    Resist and method of forming resist pattern 失效
    抗蚀剂图案的抗蚀剂和方法

    公开(公告)号:US07514197B2

    公开(公告)日:2009-04-07

    申请号:US10527068

    申请日:2003-09-04

    摘要: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

    摘要翻译: 根据本发明的抗蚀剂包括四氯甲基四甲氧基钙[4]芳烃和三氯甲基四甲氧基钙[4]芳烃中的任一种。 包含这种组分的抗蚀剂可溶于对工作环境恶化的影响较小的溶剂,即乳酸乙酯(EL),丙二醇单甲醚(PGME),丙二醇单甲醚乙酸酯(PGMEA),丙酸乙酯, 乙酸丁酯和2-庚酮。 除了上述溶剂之外,还可以通过四甲基氢氧化铵来显影。 通过电子射线曝光该抗蚀剂,达到8nm的高分辨率,通过使用该抗蚀剂作为掩模,可以将各种材料形成为超精细的形状。 根据这种抗蚀剂,提供了具有高分辨率且可溶于溶剂的光敏抗蚀剂材料,其效果较差,可以使工作环境恶化并且可以通过溶剂显影,使用它的曝光方法和使用它的超精细加工方法 。

    Manufacturing method of semiconductor device
    63.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US07402474B2

    公开(公告)日:2008-07-22

    申请号:US11233648

    申请日:2005-09-23

    申请人: Takashi Ogura

    发明人: Takashi Ogura

    IPC分类号: H01L21/027

    摘要: A method of manufacturing a semiconductor device comprises the following steps: a step of depositing a silicon oxide film on the top surface of an epitaxial layer of the region where a high withstand voltage MOS transistor is formed; a step of subsequently depositing a silicon oxide film on the top surface of the epitaxial layer according to the thickness of a gate oxide film of a low withstand voltage MOS transistor; and a step of subsequently adjusting the thickness of the silicon oxide film on the top surface of the high withstand voltage MOS transistor by etching and forming a P-type diffusion layer by ion-implantation method. This method can manufacture elements having gate oxide films different in thickness at low cost.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在形成高耐压MOS晶体管的区域的外延层的顶表面上沉积氧化硅膜的步骤; 随后根据低耐压MOS晶体管的栅极氧化膜的厚度在外延层的顶表面上沉积氧化硅膜的步骤; 以及通过蚀刻并通过离子注入法形成P型扩散层,随后调整高耐压MOS晶体管的顶表面上的氧化硅膜的厚度的步骤。 该方法可以以低成本制造具有不同厚度的栅极氧化膜的元件。

    Antenna duplexer
    66.
    发明授权
    Antenna duplexer 失效
    天线双工器

    公开(公告)号:US07180387B2

    公开(公告)日:2007-02-20

    申请号:US10992644

    申请日:2004-11-22

    IPC分类号: H01P1/213 H03H9/72

    CPC分类号: H03H9/0576 H03H9/72 H03H9/725

    摘要: The present invention provides an antenna duplexer comprising a package having a plurality of ceramic layers superposed, and a transmitting filter and a receiving filter which are mounted on a surface of the package. A phase-matching strip line is formed on a surface of one ceramic layer. The package has grounding layers formed respectively on surfaces of upper and lower ceramic layers with the phase-matching strip line interposed therebetween. A plurality of via holes are formed around the phase-matching strip line for connecting the two grounding layers to each other.

    摘要翻译: 本发明提供了一种天线双工器,其包括叠置有多个陶瓷层的封装,以及安装在封装表面上的发射滤波器和接收滤波器。 在一个陶瓷层的表面上形成相位匹配带状线。 该封装具有分别形成在上部和下部陶瓷层的表面上的接地层,并且相互匹配的带状线插入其间。 在相匹配带状线周围形成多个通孔,用于将两个接地层彼此连接。

    Resist and method of forming resist pattern

    公开(公告)号:US20060127798A1

    公开(公告)日:2006-06-15

    申请号:US10527068

    申请日:2003-09-04

    IPC分类号: G03C1/76

    摘要: The resist according to the present invention includes any one of tetrachloromethyl tetramethoxycalix [4] arene and trichloromethyl tetramethoxycalix [4] arene. The resist including such kind of components is soluble in the solvent having less effect to worsen a working environment, namely, ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate and 2-heptanone. It can be developed by tetra-methyl ammonium hydroxide in addition to the above mentioned solvent. By exposing this resist by electronic ray, high resolution of 8 nm is attained, and by using this resist as a mask, various materials can be formed into a hyperfine shape. According to such kind of resist, a photosensitive resist material which has high resolution and solvable to solvents having less effect to worsen the working environment and can be developed by the solvents, a exposure method using it, and a hyperfine processing method using it are provided.

    Method of scavenging intermediate formed by reaction of oxidoreductase with substrate
    68.
    发明申请
    Method of scavenging intermediate formed by reaction of oxidoreductase with substrate 审中-公开
    通过氧化还原酶与底物的反应形成的清除中间体的方法

    公开(公告)号:US20050282241A1

    公开(公告)日:2005-12-22

    申请号:US10525974

    申请日:2003-05-08

    IPC分类号: C12Q1/26

    CPC分类号: C12Q1/26

    摘要: The present invention is the method to trap reliably the reaction intermediates of an oxidoreductase, such as cytochrome-c oxidase. The present invention is a method for trapping reaction intermediates of an oxidoreductase comprising the steps of: (the first step) dissolving an oxidoreductase, a photoinduced reducing agent that releases electrons by light-irradiation, amine-type electron donor and a substrate for said oxidoreductase in water and mixing these; (the second step) cooling the mixture prepared in the first step to 70˜270 K to be frozen; (the third step) irradiating the frozen mixture prepared in the second step at 70˜270 K with a light in a wavelength region including the absorbing wavelength of said photoinduced reducing agent; and (the fourth step) raising the temperature of the frozen mixture prepared in the third step to the temperature of 80˜270 K that is higher than the temperature of the third step.

    摘要翻译: 本发明是可靠地捕获氧化还原酶如细胞色素c氧化酶的反应中间体的方法。 本发明是用于捕获氧化还原酶的反应中间体的方法,包括以下步骤:(第一步)溶解氧化还原酶,通过光照射释放电子的光诱导还原剂,胺型电子给体和所述氧化还原酶底物 在水中混合; (第二步)将第一步制备的混合物冷却至70〜270K,待冷冻; (第三步骤)在包括所述光诱导的还原剂的吸收波长的波长区域中的光照射在70〜270K的第二步骤中制备的冷冻混合物; 和(第四步骤)将第三步骤中制备的冷冻混合物的温度升高到高于第三步骤的温度的80-270K的温度。

    Antenna duplexer
    70.
    发明申请
    Antenna duplexer 失效
    天线双工器

    公开(公告)号:US20050116790A1

    公开(公告)日:2005-06-02

    申请号:US10992644

    申请日:2004-11-22

    IPC分类号: H03H9/72 H03H9/25

    CPC分类号: H03H9/0576 H03H9/72 H03H9/725

    摘要: The present invention provides an antenna duplexer comprising a package having a plurality of ceramic layers superposed, and a transmitting filter and a receiving filter which are mounted on a surface of the package. A phase-matching strip line is formed on a surface of one ceramic layer. The package has grounding layers formed respectively on surfaces of upper and lower ceramic layers with the phase-matching strip line interposed therebetween. A plurality of via holes are formed around the phase-matching strip line for connecting the two grounding layers to each other.

    摘要翻译: 本发明提供了一种天线双工器,其包括叠置有多个陶瓷层的封装,以及安装在封装表面上的发射滤波器和接收滤波器。 在一个陶瓷层的表面上形成相位匹配带状线。 该封装具有分别形成在上部和下部陶瓷层的表面上的接地层,并且相互匹配的带状线插入其间。 在相匹配带状线周围形成多个通孔,用于将两个接地层彼此连接。