公开(公告)号：US20120222730A1

公开(公告)日：2012-09-06

申请号：US13037798

申请日：2011-03-01

申请人： Oki Gunawan ,  Jeehwan Kim ,  David B. Mitzi ,  Devendra K. Sadana ,  Teodor K. Todorov

发明人： Oki Gunawan ,  Jeehwan Kim ,  David B. Mitzi ,  Devendra K. Sadana ,  Teodor K. Todorov

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/0326 ,  C23C14/34 ,  C25D7/12 ,  H01L31/076 ,  H01L31/078 ,  H01L31/18 ,  H01L31/20 ,  Y02E10/548

摘要： A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

摘要翻译： 感光装置和方法包括具有N型层的顶层单元，P型层和其间的顶层本征层。 底部单元包括N型层，P型层和底层本征层。 底部本征层包括含有Cu-Zn-Sn的硫族化物。

公开(公告)号：US20120187539A1

公开(公告)日：2012-07-26

申请号：US13013357

申请日：2011-01-25

申请人： JOEL P. DE SOUZA ,  Marinus Hopstaken ,  Jeehwan Kim ,  Devendra K. Sadana

发明人： JOEL P. DE SOUZA ,  Marinus Hopstaken ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L29/167 ,  H01L21/225

CPC分类号： H01L21/2256 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A device and method for semiconductor fabrication includes forming a buffer layer on a semiconductor substrate and depositing an amorphous elemental layer on the buffer layer. Elements of the elemental layer are diffused through the buffer layer and into the semiconductor layer.

摘要翻译： 用于半导体制造的器件和方法包括在半导体衬底上形成缓冲层并在缓冲层上沉积非晶质元素层。 元素层的元素通过缓冲层扩散到半导体层中。

公开(公告)号：US20120104390A1

公开(公告)日：2012-05-03

申请号：US12912940

申请日：2010-10-27

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

公开(公告)号：US09123842B2

公开(公告)日：2015-09-01

申请号：US13554886

申请日：2012-07-20

申请人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00 ,  H01L31/0352 ,  H01L31/103 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/1037

摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

摘要翻译： 感光体包括多层阻挡结构，以减少由导电基底电子注入的感光体的表面电压的暗放电。 多层阻挡结构包括与一个或多个窄带隙阻挡层交替顺序的宽带隙半导体层。 感光体的制造方法包括：以宽带隙半导体层交替排列形成阻挡结构的窄带隙阻挡层的转移掺杂。 使用该方法可以获得空穴或电子注入的抑制。

公开(公告)号：US08933456B2

公开(公告)日：2015-01-13

申请号：US13616322

申请日：2012-09-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L29/38 ,  H01L21/02 ,  H01L21/762

CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

公开(公告)号：US20130341623A1

公开(公告)日：2013-12-26

申请号：US13527961

申请日：2012-06-20

申请人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/1037

摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

摘要翻译： 感光体包括多层阻挡结构，以减少由导电基底电子注入的感光体的表面电压的暗放电。 多层阻挡结构包括与一个或多个窄带隙阻挡层交替顺序的宽带隙半导体层。 感光体的制造方法包括：以宽带隙半导体层交替排列形成阻挡结构的窄带隙阻挡层的转移掺杂。 使用该方法可以获得空穴或电子注入的抑制。

公开(公告)号：US20120156393A1

公开(公告)日：2012-06-21

申请号：US12971243

申请日：2010-12-17

申请人： Osama Tobail ,  Ahmed Abou-Kandil ,  Mostafa M. El-Ashry ,  Jeehwan Kim ,  Paul M. Kozlowski ,  Mohamed Saad ,  Devendra K. Sadana

发明人： Osama Tobail ,  Ahmed Abou-Kandil ,  Mostafa M. El-Ashry ,  Jeehwan Kim ,  Paul M. Kozlowski ,  Mohamed Saad ,  Devendra K. Sadana

IPC分类号： C23C16/50 ,  C23C16/42 ,  C23C16/00

CPC分类号： C23C14/0021 ,  C23C14/14 ,  C23C14/22 ,  C23C16/45514 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02274

摘要： A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.

摘要翻译： 通过蒸发一种或多种固体材料并使得到的蒸气和含氢气体进入两个电极之间的空间，在受控真空中在基板上形成氢化薄膜。 电极之一包括允许蒸汽进入空间的开口。 在空间内产生等离子体以引起含氢气体的解离并促进材料和含氢气体之间的反应。

公开(公告)号：US20110272010A1

公开(公告)日：2011-11-10

申请号：US12776549

申请日：2010-05-10

申请人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana

发明人： Ahmed Abou-Kandil ,  Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0232

CPC分类号： H01L31/03921 ,  H01L31/022483 ,  H01L31/022491 ,  Y02E10/50

摘要： A photovoltaic device and method include a doped transparent electrode, and a light-absorbing semiconductor structure including a first semiconductor layer. An ultra-thin layer of a non-transparent metal is formed between the transparent electrode and the first semiconductor layer to form a reduced barrier contact wherein the ultra-thin layer is light transmissive. When the ultrathin metal forms discrete individual dots, it permits a plasmonic light trapping effect to increase the current at solar cells.

摘要翻译： 光电器件和方法包括掺杂透明电极和包括第一半导体层的光吸收半导体结构。 在透明电极和第一半导体层之间形成非透明金属的超薄层，以形成减薄的屏障接触，其中超薄层是透光的。 当超薄金属形成离散的单个点时，它允许等离激元光捕获效应来增加太阳能电池的电流。

公开(公告)号：US20110212622A1

公开(公告)日：2011-09-01

申请号：US12714426

申请日：2010-02-26

申请人： Joel P. Desouza ,  Harold J. Hovel ,  Daniel Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Joel P. Desouza ,  Harold J. Hovel ,  Daniel Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L21/311

CPC分类号： H01L31/02363 ,  Y02E10/50

摘要： A low cost method is described for forming a textured Si surface such as for a solar cell which includes forming a dielectric layer containing pinholes, anisotropically etching through the pinholes to form inverted pyramids in the Si surface and removing the dielectric layer thereby producing a high light trapping efficiency for incident radiation.

摘要翻译： 描述了一种用于形成纹理Si表面的低成本方法，例如用于太阳能电池，其包括形成包含针孔的电介质层，通过针孔各向异性蚀刻以在Si表面中形成倒置的金字塔并除去电介质层，从而产生高光 捕获效率的入射辐射。

公开(公告)号：US20100221867A1

公开(公告)日：2010-09-02

申请号：US12436249

申请日：2009-05-06

申请人： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ghavam G. Shahidi

发明人： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ghavam G. Shahidi

IPC分类号： H01L31/0376 ,  H01L21/762

CPC分类号： H01L31/03921 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02667 ,  H01L21/7624 ,  H01L21/76245 ,  H01L21/76262 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.

摘要翻译： 提供了一种用于制造SOI衬底的损耗成本方法。 该方法包括通过利用蒸发沉积工艺在衬底的半导体区域上形成一层p型掺杂的非晶态含Si层。 然后进行固相重结晶步骤，以将叠层内的非晶态含硅层转化为p型掺杂单晶含Si层的堆叠。 重结晶后，对单晶含Si层进行阳极氧化和至少氧化步骤以形成SOI衬底。 太阳能电池和/或其他半导体器件可以形成在本发明的SOI衬底的上表面上。