公开(公告)号：US20040063322A1

公开(公告)日：2004-04-01

申请号：US10678359

申请日：2003-10-02

Inventor： Eui-Hyeok Yang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C3/001 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251 ,  Y10S438/928 ,  Y10S438/968

Abstract: Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.

Abstract translation: 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。 在一个实施方式中，制造载体晶片以在载体晶片的一侧包括膜。 然后通过多个接头将载体晶片上的膜结合到不同的器件晶片的表面。 接下来，通过干蚀刻化学品蚀刻载体晶片以暴露膜并将所述膜留在器件晶片上。 还描述了用湿蚀刻工艺转移膜。

公开(公告)号：US06486041B2

公开(公告)日：2002-11-26

申请号：US09790026

申请日：2001-02-20

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L2130

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06391740B1

公开(公告)日：2002-05-21

申请号：US09301082

申请日：1999-04-28

Applicant: Nathan W. Cheung ,  Francois J. Henley

Inventor： Nathan W. Cheung ,  Francois J. Henley

IPC: H01L2146

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a weakened region in a selected manner at a selected depth (20) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成弱化区域的步骤。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06187110B1

公开(公告)日：2001-02-13

申请号：US09316739

申请日：1999-05-21

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L2130

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底 所选深度以上的材料（12）和所选深度处的图案的颗粒。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。

公开(公告)号：US6159824A

公开(公告)日：2000-12-12

申请号：US25967

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A method for fabricating silicon-on-silicon substrates. A donor wafer (40) is attached to a target wafer (46) using a low-temperature bonding process. The low-temperature bonding process maintains the integrity of a layer of microbubbles (41). Subsequent processing separates a thin film (45) of material from the donor wafer. A high-temperature annealing process finishes the bonding process of the thin film to the target wafer to produce a hybrid wafer suitable for fabricating integrated circuit devices or other devices.

Abstract translation: 一种用于制造硅上硅衬底的方法。 使用低温接合工艺将施主晶片（40）附接到目标晶片（46）。 低温粘合工艺保持了一层微泡（41）的完整性。 随后的处理从供体晶片分离出薄膜（45）。 高温退火处理完成薄膜与目标晶片的接合工艺，以制造适于制造集成电路器件或其它器件的混合晶片。

公开(公告)号：US20190016590A1

公开(公告)日：2019-01-17

申请号：US16069124

申请日：2016-11-30

Applicant: Robert Bosch GmbH

Inventor： Arnd Kaelberer ,  Christian Zielke ,  Hans Artmann ,  Oliver Breitschaedel ,  Peter Borwin Staffeld

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/0069 ,  B81B3/0081 ,  B81C1/0038 ,  B81C1/00507 ,  B81C2201/0177 ,  B81C2201/0191 ,  B81C2201/0195 ,  B81C2203/0785 ,  B81C2203/03 ,  B81C2203/0136

Abstract: A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

公开(公告)号：US09386379B2

公开(公告)日：2016-07-05

申请号：US14684565

申请日：2015-04-13

Applicant: Sand 9, Inc.

Inventor： Andrew Sparks ,  Todd M. Borkowski

IPC: H04R17/02 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00

CPC classification number: H04R17/02 ,  B81B3/0018 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C2201/0191 ,  G01L9/008 ,  H04R2201/003

Abstract: Mechanical resonating structures, as well as related devices and methods of manufacture. The mechanical resonating structures can be microphones, each including a diaphragm and a piezoelectric stack. The diaphragm can have one or more openings formed therethrough to enable the determination of an acoustic pressure being applied to the diaphragm through signals emitted by the piezoelectric stack.

公开(公告)号：US20150246517A1

公开(公告)日：2015-09-03

申请号：US14251775

申请日：2014-04-14

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： YU-JUN HE ,  DONG-QI LI ,  TIAN-YI LI ,  YANG WEI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC: B32B37/00 ,  B32B37/30 ,  B32B38/08 ,  B32B37/12

CPC classification number: B32B37/025 ,  B32B37/12 ,  B32B37/30 ,  B32B38/08 ,  B32B38/10 ,  B32B2305/22 ,  B32B2309/16 ,  B32B2309/66 ,  B32B2311/04 ,  B32B2311/18 ,  B32B2311/24 ,  B32B2333/12 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0191 ,  B81C2201/0194 ,  B82B3/0014 ,  B82B3/0076

Abstract: A method for transferring nanostructures includes providing a growth substrate and a number of nanostructures located on the growth substrate. The nanostructures are transferred by an adhesive layer from the growth substrate to a target substrate. The nanostructures are between the target substrate and the adhesive layer, and at least partial of nanostructures is in contact with a surface of the target substrate. The adhesive layer is covered by a metal layer. The adhesive layer together with the metal layer is separated from the nanostructures and the target substrate in an organic solvent by an external force, wherein the organic solvent permeates into an interface between the adhesive layer and the nanostructures.

Abstract translation: 转移纳米结构的方法包括提供生长衬底和位于生长衬底上的许多纳米结构。 纳米结构通过粘合剂层从生长衬底转移到目标衬底。 纳米结构位于目标基底和粘合剂层之间，并且至少部分纳米结构与目标基底的表面接触。 粘合剂层被金属层覆盖。 粘合剂层与金属层一起通过外力与有机溶剂中的纳米结构和靶基材分离，其中有机溶剂渗入粘合剂层和纳米结构之间的界面。

公开(公告)号：US08445889B2

公开(公告)日：2013-05-21

申请号：US12918842

申请日：2009-02-23

Applicant: Kumar Bhupendra ,  Yuanyuan Zhang ,  Zongbin Wang ,  Lain-Jong Li ,  Subodh Gautam Mhaisalkar

Inventor： Kumar Bhupendra ,  Yuanyuan Zhang ,  Zongbin Wang ,  Lain-Jong Li ,  Subodh Gautam Mhaisalkar

IPC: H01L29/06

CPC classification number: G03F7/0002 ,  B41M3/006 ,  B81B2207/07 ,  B81C1/00031 ,  B81C2201/0184 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y40/00 ,  C09D11/52 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0048 ,  H01L51/0541

Abstract: A method of patterning nanostructures comprising printing an ink comprising the nanostructures onto a solvent-extracting first surface such that a pattern of nanostructures is formed on the first surface.

Abstract translation: 一种图案化纳米结构的方法，包括将包含纳米结构的油墨印刷到溶剂萃取的第一表面上，使得在第一表面上形成纳米结构图案。

公开(公告)号：US08413704B2

公开(公告)日：2013-04-09

申请号：US12155089

申请日：2008-05-29

Applicant: Zeev Abrams ,  Yael Hanein ,  Miron Hazani ,  Ori Cheshnovsky ,  Zvi Ioffe

Inventor： Zeev Abrams ,  Yael Hanein ,  Miron Hazani ,  Ori Cheshnovsky ,  Zvi Ioffe

IPC: B32B37/00

CPC classification number: C01B31/0226 ,  B32B38/0004 ,  B32B38/06 ,  B32B2309/08 ,  B81C99/009 ,  B81C2201/0191 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  G03F7/0002 ,  H01J9/025 ,  H01L51/0048 ,  H05K13/00 ,  Y10S977/842 ,  Y10S977/932 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: A stamping device for stamping a nanotube network onto a target substrate is disclosed. The device comprises a template structure having a support structure formed on or attached to a substrate, and a plurality of nanotubes being supported by the support structure and engaging a plane which is spatially separated from the substrate.