公开(公告)号：US07892917B2

公开(公告)日：2011-02-22

申请号：US12153104

申请日：2008-05-14

Applicant: Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

Inventor： Young-jin Cho ,  Yo-sep Min ,  Young-soo Park ,  Jung-hyun Lee ,  June-key Lee ,  Yong-kyun Lee

IPC: H01L21/8242

CPC classification number: H01L21/28185 ,  C01G29/006 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/85 ,  C01P2002/89 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/16 ,  C04B35/475 ,  C04B35/6264 ,  C04B2235/3232 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/444 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/76 ,  H01L21/28194 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/516 ,  H01L29/517

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract translation: 具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。 铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。 铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。 可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

公开(公告)号：US20110037033A1

公开(公告)日：2011-02-17

申请号：US12856348

申请日：2010-08-13

Applicant: Alexander A. Green ,  Mark C. Hersam

Inventor： Alexander A. Green ,  Mark C. Hersam

IPC: H01B1/04 ,  H01B1/12 ,  B01D21/26

CPC classification number: C01G39/06 ,  B01D21/26 ,  B03D3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B21/0648 ,  C01B32/19 ,  C01B32/194 ,  C01B32/196 ,  C01B32/20 ,  C01B2204/02 ,  C01B2204/04 ,  C01B2204/06 ,  C01B2204/28 ,  C01G29/006 ,  C01G41/00 ,  C01P2004/24 ,  C08G81/00 ,  C08L87/005 ,  Y10S977/845 ,  Y10T436/25375 ,  Y10T436/255

Abstract: The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

Abstract translation: 本教导部分地提供了通过原子层厚度分离二维纳米材料的方法。 在某些实施方案中，本教导提供了产生具有受控数量的原子层的石墨烯纳米材料的方法。

公开(公告)号：US20100230646A1

公开(公告)日：2010-09-16

申请号：US12783921

申请日：2010-05-20

Applicant: Jerome David Smith ,  Pedro A. Jimenez ,  Tony Jackson ,  Veda L. Evans

Inventor： Jerome David Smith ,  Pedro A. Jimenez ,  Tony Jackson ,  Veda L. Evans

IPC: H01B1/02

CPC classification number: C01G49/009 ,  B82Y30/00 ,  C01G29/006 ,  C01G45/00 ,  C01G45/006 ,  C01G51/00 ,  C01G51/006 ,  C01G53/006 ,  C01P2002/02 ,  C01P2002/32 ,  C01P2002/50 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/62 ,  C01P2006/63 ,  C01P2006/64 ,  C01P2006/80 ,  C03C3/064 ,  C03C3/14 ,  C03C8/02 ,  C03C8/16 ,  C03C8/18 ,  C03C17/008 ,  C03C17/23 ,  C03C2217/485 ,  C04B35/01 ,  C04B35/016 ,  C04B35/26 ,  C04B35/265 ,  C04B35/2658 ,  C04B35/2666 ,  C04B35/44 ,  C04B35/4521 ,  C04B35/62675 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3298 ,  C04B2235/442 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/5409 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/9661 ,  C09C1/00 ,  C09C1/22 ,  C09C1/40 ,  H01J11/12 ,  H01J11/22 ,  H01J2211/225 ,  H01J2211/444

Abstract: The present invention is directed to pigment compositions with the formula BiwMnxCOyCuzO40, wherein w is between 7 and 9, x is between 3 and 13, y is between 2 and 13, z is between 0.5 and 7 and the sum of w, x, y and z is 26. The invention also is directed to thick film black pigment compositions, conductive single layer thick film compositions, black electrodes made from such black conductive compositions and methods of forming such electrodes, and to the uses of such compositions, electrodes, and methods in flat panel display applications, including alternating-current plasma display panel devices (AC PDP).

Abstract translation: 本发明涉及具有式BiwMnxCOyCuzO40的颜料组合物，其中w在7和9之间，x在3和13之间，y在2和13之间，z在0.5和7之间，而w，x，y之和 本发明还涉及厚膜黑色颜料组合物，导电单层厚膜组合物，由这种黑色导电组合物制成的黑色电极和形成这种电极的方法，以及这些组合物，电极和 平板显示应用中的方法，包括交流等离子体显示面板设备（AC PDP）。

公开(公告)号：US07763793B2

公开(公告)日：2010-07-27

申请号：US11976108

申请日：2007-10-22

Applicant: Akihiro Sakai ,  Satoshi Okada

Inventor： Akihiro Sakai ,  Satoshi Okada

IPC: H01L35/16

CPC classification number: C01G55/002 ,  C01G29/006 ,  C01G51/40 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/01 ,  C04B35/453 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3277 ,  C04B2235/3289 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/9607 ,  C30B13/00 ,  C30B29/22 ,  H01L35/18 ,  H01L35/22

Abstract: A thermoelectric conversion material is provided that has not only a higher thermoelectric performance as compared to conventional ones but also semiconducting temperature dependence, i.e. properties that the electrical resistivity decreases with an increase in temperature. The thermoelectric conversion material contains a substance having a layered bronze structure represented by a formula (Bi2A2O4)0.5(Co1-xRhx)O2, where A is an alkaline-earth metal element and x is a numerical value of 0.4 to 0.8. The thermoelectric conversion material of the present invention exhibits good thermoelectric properties over a wide temperature range.

Abstract translation: 提供了一种热电转换材料，其不仅具有比常规热电转换材料更高的热电性能，而且还具有半导体温度依赖性，即电阻随温度升高而降低的特性。 热电转换材料含有具有由式（Bi2A2O4）0.5（Co1-xRhx）O2表示的层状青铜结构的物质，其中A为碱土金属元素，x为数值为0.4至0.8。 本发明的热电转换材料在宽的温度范围内表现出良好的热电性能。

公开(公告)号：US07658111B2

公开(公告)日：2010-02-09

申请号：US11941785

申请日：2007-11-16

Applicant: Hongxi Zhang

Inventor： Hongxi Zhang

IPC: G01L9/08

CPC classification number: G01L23/10 ,  C01G29/006 ,  C01G33/006 ,  C01G35/006 ,  C01G39/006 ,  C01G41/006 ,  C01G49/009 ,  C01P2002/50 ,  C01P2006/32 ,  C01P2006/40 ,  C04B35/495 ,  C04B2235/3208 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/81 ,  G01P15/0907 ,  H01L41/1132 ,  H01L41/187

Abstract: A piezoelectric sensor includes a ceramic material that has the formula of [Bi2O2][Am−1BmO3m+1], where m=2, A is mono-, di-, or tri-valent ions or a combination of them, B is transition element such as Fe3+, Ti4+, Nb5+, Ta5+, W6+, Mo6+ or a combination of them. The ceramics have high Curie temperature of 900˜940° C. The sensors claimed in the present invention utilize [Bi2O2][Am−1BmO3m+1] ceramics parts as sensing elements in various shapes and dimensions and can be used to sense force, acceleration, and pressure at very high temperatures of 600˜800° C.

Abstract translation: 压电传感器包括具有[Bi 2 O 2] [Am-1BmO 3m + 1]式的陶瓷材料，其中m = 2，A是一价，二价或三价离子或它们的组合，B是转变 元素如Fe3 +，Ti4 +，Nb5 +，Ta5 +，W6 +，Mo6 +或它们的组合。 陶瓷具有高的居里温度为900〜940℃。本发明所要求的传感器利用[Bi 2 O 2] [Am-1BmO 3m + 1]陶瓷部件作为各种形状和尺寸的传感元件，并且可用于感测力，加速度 ，并在600〜800℃的非常高的温度下进行压力

公开(公告)号：US20090165836A1

公开(公告)日：2009-07-02

申请号：US11976108

申请日：2007-10-22

Applicant: Akihiro Sakai ,  Satoshi Okada

Inventor： Akihiro Sakai ,  Satoshi Okada

IPC: H01L35/12 ,  H01B1/02

CPC classification number: C01G55/002 ,  C01G29/006 ,  C01G51/40 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2004/80 ,  C01P2006/40 ,  C04B35/01 ,  C04B35/453 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3277 ,  C04B2235/3289 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/9607 ,  C30B13/00 ,  C30B29/22 ,  H01L35/18 ,  H01L35/22

Abstract: A thermoelectric conversion material is provided that has not only a higher thermoelectric performance as compared to conventional ones but also semiconducting temperature dependence, i.e. properties that the electrical resistivity decreases with an increase in temperature. The thermoelectric conversion material contains a substance having a layered bronze structure represented by a formula (Bi2A2O4)0.5(Co1-xRhx)O2, where A is an alkaline-earth metal element and x is a numerical value of 0.4 to 0.8. The thermoelectric conversion material of the present invention exhibits good thermoelectric properties over a wide temperature range.

Abstract translation: 提供了一种热电转换材料，其不仅具有比常规热电转换材料更高的热电性能，而且还具有半导体温度依赖性，即电阻随温度升高而降低的特性。 热电转换材料含有具有由式（Bi2A2O4）0.5（Co1-xRhx）O2表示的层状青铜结构的物质，其中A为碱土金属元素，x为数值为0.4至0.8。 本发明的热电转换材料在宽的温度范围内表现出良好的热电性能。

公开(公告)号：US20080206561A1

公开(公告)日：2008-08-28

申请号：US12017567

申请日：2008-01-22

Applicant: Shohei YOKOYAMA ,  Nobuyuki Kobayashi ,  Tsutomu Nanataki

Inventor： Shohei YOKOYAMA ,  Nobuyuki Kobayashi ,  Tsutomu Nanataki

IPC: B32B5/16 ,  B28B1/00 ,  B02C23/08

CPC classification number: C04B35/495 ,  C01G29/006 ,  C01G33/006 ,  C01G35/006 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2004/03 ,  C04B35/475 ,  C04B35/493 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/3298 ,  C04B2235/365 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/762 ,  C04B2235/786 ,  C04B2235/79 ,  Y10T428/2982 ,  Y10T428/2991

Abstract: A plate-like polycrystalline particle is produced by forming inorganic particles into a self-supported, sheet-like shaped body with a predetermined thickness, firing the shaped body, and crushing and classifying the fired shaped body by passing through a mesh having openings with a predetermined size. The inorganic particles are composed of an oxide having a perovskite structure and grow into crystal grains with an isotropic and polyhedral shape. Since grain growth in the thickness direction is limited and grain growth in the surface direction of the sheet is promoted, it is possible to obtain crystal grains having a high aspect ratio and a high degree of orientation. Therefore, in the plate-like polycrystalline particle, in most parts, the number of crystal grains present in the thickness direction of the particle at any one point is one, and a high aspect ratio and a high degree of orientation are achieved.

Abstract translation: 通过将无机粒子形成为具有预定厚度的自支撑的片状体，制成板状多晶粒子，烧成成形体，通过具有开口的网状物进行粉碎分级， 预定尺寸。 无机颗粒由具有钙钛矿结构的氧化物组成并且生长成具有各向同性和多面体形状的晶粒。 由于厚度方向的晶粒生长受到限制，并且促进了片材的表面方向的晶粒生长，因此可以获得具有高纵横比和高取向度的晶粒。 因此，在板状多晶粒子中，在大多数部分中，任何一点存在于粒子的厚度方向上的晶粒的数量为一个，并且实现高纵横比和高取向度。

公开(公告)号：US20080170977A1

公开(公告)日：2008-07-17

申请号：US11912799

申请日：2006-04-28

Applicant: Takeshi Shimada ,  Koichi Terao ,  Kazuya Toji

Inventor： Takeshi Shimada ,  Koichi Terao ,  Kazuya Toji

IPC: C01F17/00 ,  C01G23/04

CPC classification number: C04B35/4682 ,  C01G23/006 ,  C01G29/006 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/62635 ,  C04B35/62645 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/6303 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/96 ,  H01C7/025 ,  H01C17/06533 ,  H01G4/1227

Abstract: To provide a semiconductor porcelain composition in which a portion of Ba of BaTiO3 is substituted by Bi-Na, which is capable of inhibiting evaporation of Bi in a calcining step, inhibiting the formation of secondary phases by preventing a compositional shift of Bi-Na, further reducing a resistivity at room temperature, and inhibiting a scattering in a Curie temperature, and a method of producing the same. By separately preparing a composition of (BaQ)TiO3 (Q is a semiconductive dopant) and a composition of (BiNa)TiO3, and calcining the composition of (BaQ)TiO3 at a comparatively high temperature and calcining the composition of (BiNa)TiO3 at a comparatively low temperature to thereby calcine the compositions at their respective optimum temperatures, evaporation of Bi in the composition of (BiNa)TiO3 can be inhibited, formation of secondary phases can be inhibited by preventing a compositional shift of Bi-Na; and by mixing, forming and sintering the calcined powders, a semiconductor porcelain composition having a small resistivity at room temperature and being inhibited from a scattering in the Curie temperature can be provided.

Abstract translation: 为了提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na所取代，Bi-Na能够在煅烧步骤中抑制Bi的蒸发，通过防止二次相的形成来抑制 Bi-Na的组成位移，进一步降低室温下的电阻率，抑制居里温度的散射及其制造方法。 通过分别制备（BaQ）TiO 3（Q是半导体掺杂剂）和（BiNa）TiO 3组合物的组合物，并煅烧组合物（BaQ） 在比较高的温度下煅烧TiO 2，并在比较低的温度下煅烧（BiNa）TiO 3的组成，从而在各自的最适温度下焙烧组合物，蒸发Bi 可以抑制（BiNa）TiO 3 3的组成，可以通过防止Bi-Na的组成偏移来抑制二次相的形成。 并且通过混合，形成和烧结煅烧粉末，可以提供在室温下具有小的电阻率并被抑制居里温度的散射的半导体瓷组合物。

公开(公告)号：US20080111452A1

公开(公告)日：2008-05-15

申请号：US11766265

申请日：2007-06-21

Applicant: Takaaki Koizumi ,  Hideki Shimizu

Inventor： Takaaki Koizumi ,  Hideki Shimizu

IPC: H01L41/187 ,  H01L41/08 ,  C04B35/468

CPC classification number: C04B35/495 ,  C01G29/006 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3201 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/449 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/786 ,  H01L41/0973 ,  H01L41/1132 ,  H01L41/187

Abstract: A piezoelectric/electrostrictive material having a nonstoichiometric composition represented by a general formula (1): (1−x)(BiaNabTiO3+δ)−x(KcNbO3+ζ)   (1) wherein 0.01≦x

Abstract translation: 具有由通式（1）表示的非化学计量组成的压电/电致伸缩材料：<？in-line-formula description =“In-line formula”end =“lead”→>（1-x） 一种Na 2 O 3 + 3 +δ）-x（铌C 3 O 3 +ζ） （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中0.01 <= x <0.08，a <0.5,1.01 <=（a / b）<= 1.08,0.92 当Z = 0时，当δ= 0且δ<> 0时，<=（a + b）/ c <0.99和0.9 <= c <

公开(公告)号：US20060237760A1

公开(公告)日：2006-10-26

申请号：US10546498

申请日：2004-02-20

Applicant: Yukio Sakashita

Inventor： Yukio Sakashita

IPC: H01L27/108

CPC classification number: H01G4/1218 ,  C01G29/006 ,  C01P2002/02 ,  C01P2002/04 ,  C01P2002/50 ,  C01P2004/84 ,  C01P2006/40 ,  C04B35/475 ,  C04B2235/3213 ,  C04B2235/787 ,  H01G4/33 ,  H01L28/55

Abstract: A thin film capacitive element according to the present invention includes between a first electrode layer and a second electrode layer a dielectric layer formed of a dielectric material containing a bismuth layer structured compound having a composition represented by the stoichiometric compositional formula: (Bi2O2)2+ (Am−1BmO3m+1)2−, where a symbol m is a positive integer, a symbol A is at least one element selected from a group consisting of sodium, potassium, lead, barium, strontium, calcium and bismuth, and a symbol B is at least one element selected from a group consisting of iron, cobalt, chromium, gallium, titanium, niobium, tantalum, antimony, vanadium, molybdenum and tungsten. The thin film capacitive element having the above identified configuration can be made thin and has an excellent temperature compensating characteristic.

Abstract translation: 根据本发明的薄膜电容元件在第一电极层和第二电极层之间包括由包含由化学计量组成式表示的组成的铋层结构化合物的电介质材料形成的电介质层：（Bi < （O 2）2 +（3-m-1）m O 3 O 3 符号A为选自钠，钾，铅，钡，锶等的至少一种元素，其中符号m为正整数，符号A为选自钠，钾，铅，钡，锶， 钙和铋，符号B是选自铁，钴，铬，镓，钛，铌，钽，锑，钒，钼和钨中的至少一种元素。 具有上述结构的薄膜电容元件可以变薄并且具有优异的温度补偿特性。