公开(公告)号：US20150203963A1

公开(公告)日：2015-07-23

申请号：US14676982

申请日：2015-04-02

Applicant: First Solar, Inc.

Inventor： Rick C. Powell

IPC: C23C16/458

CPC classification number: C23C16/4585 ,  C03B35/18 ,  C03B35/181 ,  C03B35/183 ,  C23C16/4401 ,  C23C16/45591 ,  C23C16/4586 ,  C23C16/54 ,  C23C16/545 ,  H01L21/67706 ,  H01L21/6776

Abstract: A deposition system and method includes a deposition source, a roll conveyor and at least one shield positioned at a location proximate to the deposition source.

Abstract translation: 沉积系统和方法包括沉积源，辊式输送机和位于靠近沉积源的位置处的至少一个屏蔽件。

公开(公告)号：US20150197855A1

公开(公告)日：2015-07-16

申请号：US14667692

申请日：2015-03-25

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

IPC: C23C16/52 ,  H01L21/3205 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

Abstract: Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

Abstract translation: 本发明公开了一种制造半导体器件的方法，包括：通过向衬底提供第一处理气体，在其表面上形成金属膜或GST膜而对金属膜或GST膜进行预处理，而没有 供应第二处理气体; 并且对已经进行了预处理的基板进行形成处理，使得通过执行至少一个循环（i）提供第一处理气体而在金属膜或GST膜上形成膜，并且（ ii）提供通过等离子体激发而激活的第二处理气体。

公开(公告)号：US20150184301A1

公开(公告)日：2015-07-02

申请号：US14581492

申请日：2014-12-23

Applicant: Hitachi Kokusai Electric Inc.

Inventor： Shuhei SAIDO

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/52 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4557 ,  C23C16/46

Abstract: Provided is a substrate processing apparatus capable of suppressing the difference between temperatures of a susceptor and the shower head. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement device disposed in the process chamber, the substrate placement device comprising a substrate placement surface where the substrate is placed and a first heater; a shower head disposed opposite to the substrate placement surface, the shower head comprising a second heater and an opposing surface facing the substrate placement surface; a processing gas supply system configured to supply a processing gas for processing the substrate placed on the substrate placement surface into the process chamber via the shower head; an exhaust system configured to evacuate an inner atmosphere of the process chamber; and a controller configured to control outputs of the first heater and the second heater.

Abstract translation: 提供一种能够抑制基座和淋浴头的温度之间的差异的基板处理装置。 基板处理装置包括：处理室，被配置为处理基板; 设置在所述处理室中的衬底放置装置，所述衬底放置装置包括放置衬底的衬底放置表面和第一加热器; 淋浴头，其布置成与所述基板放置表面相对，所述淋浴喷头包括第二加热器和面向所述基板放置表面的相对表面; 处理气体供给系统，其经由所述喷淋头供给用于将配置在所述基板配置面上的所述基板进行处理的处理气体; 排气系统，构造成排出处理室的内部气氛; 以及控制器，被配置为控制第一加热器和第二加热器的输出。

公开(公告)号：US09034142B2

公开(公告)日：2015-05-19

申请号：US12642497

申请日：2009-12-18

Applicant: Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

Inventor： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

IPC: C23C16/52 ,  H01L21/306 ,  C23C16/455 ,  C23C16/44

CPC classification number: C23C16/52 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/458 ,  C23C16/46

Abstract: A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

Abstract translation: 用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。 热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。 热量由插入淋浴头蒸汽的加热元件提供。 使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

公开(公告)号：US20150086715A1

公开(公告)日：2015-03-26

申请号：US14237577

申请日：2012-07-30

Applicant: Raymond Jacobus Wilhelmus Knaapen ,  Ruud Olieslagers ,  Dennis Van Den Berg ,  Matijs C. Van Den Boer ,  Diederik Jan Maas ,  Jacques Cor Johan Van Der Donck ,  Freddy Roozeboom

Inventor： Raymond Jacobus Wilhelmus Knaapen ,  Ruud Olieslagers ,  Dennis Van Den Berg ,  Matijs C. Van Den Boer ,  Diederik Jan Maas ,  Jacques Cor Johan Van Der Donck ,  Freddy Roozeboom

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45589 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/4586 ,  C23C16/4588 ,  C23C16/52 ,  C23C16/545

Abstract: Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory

Abstract translation: 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。 该方法还包括在旋转轨迹的第一部分上将来自前体气体供应的前体气体供给朝向基底的切换; 并且中断在旋转轨迹的第二部分上从前体气体供应源提供前体气体

公开(公告)号：US20150083330A1

公开(公告)日：2015-03-26

申请号：US14036754

申请日：2013-09-25

Applicant: Applied Materials, Inc.

Inventor： Nagendra V. Madiwal ,  Robert Irwin Decottignies ,  Andrew Nguyen ,  Paul B. Reuter ,  Angela R. Sico ,  Michael Kuchar ,  Travis Morey ,  Mitchell Disanto

IPC: C23C16/44 ,  C23C14/56 ,  H01L21/67

CPC classification number: H01L21/6719 ,  C23C14/564 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45563 ,  H01L21/67126 ,  Y10T29/49432

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

Abstract translation: 电子设备制造系统可以包括提供传送室和处理室之间的界面的室端口组件。 在一些实施例中，室端口组件可以被配置成将净化气体流引导到腔室端口组件的衬底传送区域。 在其它实施例中，处理室和/或转移室可以被配置成将净化气体流引导到基板传送区域中。 吹扫气体流入衬底传送区域的流动可以防止和/或减少颗粒物质从腔室硬件到在转移室和处理室之间转移的衬底上的迁移。 还提供了组装腔室端口组件的方法，以及其他方面。

公开(公告)号：US20150059981A1

公开(公告)日：2015-03-05

申请号：US14332775

申请日：2014-07-16

Applicant: APPLIED MATERIALS, INC.

Inventor： JOEL M. HUSTON ,  OLKAN CUVALCI ,  MICHAEL P. KARAZIM ,  JOSEPH YUDOVSKY

IPC: H01J37/32

CPC classification number: H01J37/32477 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/4409 ,  C23C16/45519 ,  C23C16/45521 ,  C23C16/46 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32724

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid.

Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的设备包括包围处理容积的室主体，室主体包括室底板，耦合到室底板的室壁，以及可移除地联接到室壁的室盖，其中至少一个 室壁和室盖包括用于热控制介质的流动的通道; 设置在邻近室间隔开的加热板; 套筒邻近室壁设置并与室壁间隔开，套筒由加热板支撑; 以及设置在所述室壁和所述室盖之间的第一界面处的第一密封元件。

公开(公告)号：US20140377961A1

公开(公告)日：2014-12-25

申请号：US13923390

申请日：2013-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lan Hai Wang ,  Ding-I Liu ,  Si-Wen Liao ,  Po-Hsiung Leu ,  Yong-Hung Yang ,  Chia-Ming Tai

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02181

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract translation: 提供一种多室薄膜沉积设备和一种用于沉积薄膜的方法。 每个室包括三维气体输送系统，其包括朝向衬底向下输送的工艺气体，并横向朝向衬底。 泵送系统包括在每个室中的排气口，其位于正在处理的衬底下的中心位置，因此围绕衬底边缘的所有部分的气流与排气口等间隔开，从而产生均匀的气流分布，其导致 沉积在基板的前表面和后表面上的膜的膜厚度均匀性。 沉积的膜在基板的前后表现出均匀的厚度，并且在基板的背面的周边上向内延伸到均匀的距离。

公开(公告)号：US20140335008A1

公开(公告)日：2014-11-13

申请号：US14340033

申请日：2014-07-24

Applicant: Korea Research Institute of Chemical Technology

Inventor： Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi

IPC: C01B33/027

CPC classification number: C01B33/027 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/442

Abstract: A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state.

Abstract translation: 公开了一种使用流化床反应器制备颗粒状多晶硅的方法。 床的上部和下部空间分别被定义为反应区和加热区，反应气体出口的高度被选择为参考高度。 本发明通过充分提供所需的热量并稳定地维持反应区域中的反应温度，而不损害流化床反应器的机械稳定性，使反应器生产率最大化。 这是通过加热区域中的电阻加热来实现的，其中内部加热器安装在反应气体供给装置和反应器管的内壁之间的空间中，从而加热流化气体和加热区域中的硅颗粒。 通过以使得硅颗粒能够以连续流化状态在反应区和加热区之间混合的速率供给流化气体，将加热区中产生的热转移到反应区。

公开(公告)号：US08851886B2

公开(公告)日：2014-10-07

申请号：US12363059

申请日：2009-01-30

Applicant: Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

Inventor： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

IPC: F27D1/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01L21/67109 ,  C23C16/4401 ,  C23C16/455 ,  H01L21/67098

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。 在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。 歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，用于将气体供应到反应管的内部。